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MMBT2222A

MMBT2222A

  • 厂商:

    ST(先科)

  • 封装:

    SOT-23

  • 描述:

    晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):600mA 功率(Pd):350mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):1V@500mA,50mA 直...

  • 数据手册
  • 价格&库存
MMBT2222A 数据手册
MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Symbol MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A VCBO VCEO VEBO Value 60 75 30 40 5 6 Unit V V V Collector Current IC 600 mA Power Dissipation Ptot 350 mW Tj 150 ℃ Tstg - 55 to + 150 ℃ Junction Temperature Storage Temperature Range SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 03 MMBT2222 / MMBT2222A Characteristics at Ta = 25℃ Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Symbol Min. Max. Unit hFE hFE hFE hFE hFE hFE hFE 35 50 75 50 100 30 40 300 - - ICBO - 10 10 nA IEBO - 100 nA MMBT2222 MMBT2222A V(BR)CBO 60 75 - V MMBT2222 MMBT2222A V(BR)CEO 30 40 - V MMBT2222 MMBT2222A V(BR)EBO 5 6 - V - 0.4 0.3 1.6 1 0.6 - 1.3 1.2 2.6 2 fT 300 - MHz Cob - 8 pF td - 10 ns tr - 25 ns tstg - 225 ns tf - 60 ns MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A VCE(sat) VBE(sat) Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 100 KHz Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA V V SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 03 MMBT2222 / MMBT2222A Fig.5 Pc-Ta SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 03
MMBT2222A 价格&库存

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MMBT2222A
    •  国内价格
    • 100+0.10685
    • 1000+0.07694
    • 2000+0.07482
    • 5000+0.07336

    库存:1796

    MMBT2222A
      •  国内价格
      • 50+0.09387
      • 500+0.07569
      • 3000+0.05979
      • 6000+0.05372
      • 24000+0.04847
      • 51000+0.04564

      库存:35171