SM454AT9RL

H N04H 40V /20A Single N Power MOSFET SM454AT9RL 40V /20A Single N Power MOSFET N V General Description RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 40V /20A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type SM454AT9RL TO-252 DS Tape and reel infomation Marking Parameter 40 V 28.0 mΩ 44.0 mΩ 20 A 100% UIS Tested 100% Rg Tested 2500 454A 20N04H Symbol Maximum Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 32.0 IAR 6.4 EAR 14.7 TA=25°C A A mJ 37 PD TA=70°C Junction and Storage Temperature Range 15.0 IDM G Repetitive avalanche energy L=0.1mH 20.0 ID W 18 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V02 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 100 150 °C/W 200 240 °C/W 60 96 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage 40V /20A Single N Power MOSFET Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min SM454AT9RL Typ Max 40 Units V 1 5 uA ±100 nA 2.3 3 V VGS=-10V, ID=20A 28.0 40.0 VGS=4.5V, ID=20A 44.0 57.2 Forward Transconductance VDS=5V, ID=20A 94 Diode Forward Voltage IS=1A,VGS=89V 0.72 1.5 mΩ S 1 V 20 A Typ Max Units 516 629 pF 82 100 pF 43 51 pF 0.8 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.6 tD(on) Turn-On DelayTime 9 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V02 Body Diode Reverse Recovery Charge Conditions Min Typ 8.3 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 4.15 1.12 7.2 25.2 nC ns 8.1 IF=-8A, dI/dt=500A/µs 18 ns IF=18A, dI/dt=500A/µs 10 nC 2 www.sourcechips.com 40V /20A Single N Power MOSFET V02 3 www.sourcechips.com SM454AT9RL 40V /20A Single N Power MOSFET V02 4 www.sourcechips.com SM454AT9RL