VS4518AD

VS4518AD -40V/-33A P-Channel Advanced Power MOSFET Features  P-Channel，-5V Logic Level Control  Fast Switching  Enhancement mode V DS -40 V R DS(on),TYP@ VGS=-10 V 26 mΩ R DS(on),TYP@ VGS=-4.5V 42 mΩ ID -33 A  100% Avalanche Tested TO-252  Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel information VS4518AD TO-252 4518AD 2500PCS/Reel Maximum ratings, at T j =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① EAS PD Rating Unit -40 V TC =25°C -33 A TC =25°C -33 A TC =100°C -23 A TC =25°C -132 A 68 mJ 48 W ±20 V -55 to 175 °C Avalanche energy, single pulsed ② Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range TC =25°C Thermal Characteristics Rθ JC Thermal Resistance-Junction to Case 3.1 °C/W Rθ JA Thermal Resistance-Junction to Ambient 100 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B – FEB, 2018 www.vgsemi.com VS4518AD -40V/-33A P-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -40 -- -- V Zero Gate Voltage Drain Current VDS=-40V,VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=-40V,VGS=0V -- -- -100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.3 -1.8 -2.4 V RDS(ON) Drain-Source On-State Resistance ③ VGS=-10V, ID=-20A -- 26 34 mΩ RDS(ON) Drain-Source On-State Resistance ③ VGS=-4.5V, ID=-15A -- 42 55 mΩ 1100 1310 1500 pF 65 115 165 pF 50 90 130 pF -- 9.5 -- Ω -- 30 -- nC -- 4 -- nC -- 6 -- nC -- 9 -- nS V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-20V,VGS=0V, f=1MHz f=1MHz VDS=-20V,ID=-20A, VGS=-10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=-20A, -- 7 -- nS t d(off) Turn-Off Delay Time RG=3.0Ω, -- 192 -- nS tf Turn-Off Fall Time -- 64 -- nS VDD=-20V, VGS=-10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage ISD=-20A,VGS=0V -- -1 -1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=-20A, -- 17 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=-100A/μs 7 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ②Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = -13A, VGS =-10V. Part not recommended for use above this value ③Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev B – FEB, 2018 www.vgsemi.com VS4518AD -40V/-33A P-Channel Advanced Power MOSFET -ID, -Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics -VDS,- Drain -Source Voltage (V) Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj Normalized On Resistance -ID, -Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -ID,- Drain Current (A) Tj - Junction Temperature (°C) -ISD, -Reverse Drain Current (A) -VGS, -Gate -Source Voltage (V) -VSD, -Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev B – FEB, 2018 -VDS, -Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VS4518AD -40V/-33A P-Channel Advanced Power MOSFET C, Capacitance (pF) -VGS, -Gate-Source Voltage (V) Typical Characteristics -VDS , -Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZθJC Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and Waveforms Copyright Vanguard Semiconductor Co., Ltd Rev B – FEB, 2018 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VS4518AD -40V/-33A P-Channel Advanced Power MOSFET TO-252 Package Outline Data Symbol Dimensions (unit: mm) Min Typ Max Notes: A 2.20 2.30 2.38 1. Refer to JEDEC TO-252 variation AA A1 0.46 0.50 0.63 2. Dimension "E" does NOT include mold flash, protrusions or b 0.64 0.76 0.89 gate burrs. Mold flash, protrusions or gate burrs shall not b1 0.77 0.85 1.14 exceed 0.1524mm per side. b2 5.00 5.33 5.46 3. Dimension "D1" does NOT include interlead flash or c 0.458 0.508 0.558 protrusion. Interlead flash or protrusion shall not exceed D1 5.98 6.10 6.223 0.1524mm per end. D2 5.21 -- -- E 6.40 6.60 6.731 E1 4.40 -- -- 2.286 BSC e e1 -- 4.57 -- HD 9.40 10.00 10.40 2.743 REF L L1 1.40 1.52 1.77 L2 0.50 0.80 1.01 w -- 0.20 -- y -- -- 0.20 Copyright Vanguard Semiconductor Co., Ltd Rev B – FEB, 2018 Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com www.vgsemi.com