SMF36CA

Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 SMF Series Datasheet Description The SMF series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. SMF package is 50% smaller in footprint when compare to SMA package and deliverying one of the low height profiles (1.2mm) in the industry. Features  IEC61000-4-2 ESD 15KV Air, 8KV contact compliance  SOD-123FL surface mount package  Protects one I/O line  Peak power dissipation of 1000W under 8/20μs waveform  Low leakage current  Solid-state silicon avalanche technology  RoHS compliant  Solder reflow temperature: Pure Tin-Sn, 260~270℃  Flammability rating UL 94V-0  Meets MSL level 1, per J-STD-020 Applications SMF devices are ideal for the protection of I/O interfaces, VCC bus and other vulnerable circuit used in cellular phones, portable devices, business machines, power supplies and other consumer applications. Maximum Ratings and Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 200 Watts Peak pulse power (tp=8/20μs waveform) PPPM Minimum 1000 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 1.0 Watts VF 3.5 V IFSM 20 Amps TJ,TSTG -55 to +150 ℃ Typical thermal resistance junction to lead RθJL 100 ℃/W Typical thermal resistance junction to ambient RθJA 220 ℃/W Steady state power dissipation at TL=75℃ (Fig.5) Maximum Instantaneous Forward Voltage at 12A for Unidirectional Only Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) Operating junction and Storage Temperature Ranges. Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above TA=25℃ per Fig.2. 2. Each terminal is surface Mounted on the 5.0mm×5.0mm (0.03mm thick) copper pads. 3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum. www.liownsemi.com 掌握芯技术 Core Technology （V2） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Dimensions (SOD123FL) Dimensions D C F B Soldering Pad Layout Recommended A Inches Millimeters Min. Max. Min. Max. A 0.138 0.154 3.50 3.90 B 0.102 0.118 2.60 3.00 C 0.030 0.043 0.75 1.10 D 0.063 0.079 1.60 2.00 1.00 F H 1.10 h 2.00 0.031Typ. 0.80Typ. H 0.035 0.053 0.90 1.35 h 0.005 0.009 0.12 0.22 Electrical Characteristics (TA=25℃) Part Number Device Reverse Breakdown Marking Stand-Off Voltage Code Voltage @IT Maximum Test Clamping Current Voltage @IPP Peak Reverse Pulse Leakage Current @VR Uni Bi UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMF5.0A SMF5.0CA KE AE 5 6.4 7 10 9.2 21.8 500 SMF6.0A SMF6.0CA KG AG 6 6.67 7.37 10 10.3 19.4 400 SMF6.5A SMF6.5CA KK AK 6.5 7.22 7.98 10 11.2 17.9 350 SMF7.0A SMF7.0CA KM AM 7 7.78 8.6 10 12.0 16.7 200 SMF7.5A SMF7.5CA KP AP 7.5 8.33 9.21 1 12.9 15.5 100 SMF8.0A SMF8.0CA KR AR 8 8.89 9.83 1 13.6 14.7 50 SMF8.5A SMF8.5CA KT AT 8.5 9.44 10.4 1 14.4 13.9 20 SMF9.0A SMF9.0CA KV AV 9 10 11.1 1 15.4 13.0 10 SMF10A SMF10CA KX AX 10 11.1 12.3 1 17.0 11.8 5 SMF11A SMF11CA KZ AZ 11 12.2 13.5 1 18.2 11.0 3 SMF12A SMF12CA LE BE 12 13.3 14.7 1 19.9 10.1 1 SMF13A SMF13CA LG BG 13 14.4 15.9 1 21.5 9.3 1 SMF14A SMF14CA LK BK 14 15.6 17.2 1 23.2 8.6 1 SMF15A SMF15CA LM BM 15 16.7 18.5 1 24.4 8.2 1 SMF16A SMF16CA LP BP 16 17.8 19.7 1 26.0 7.7 1 SMF17A SMF17CA LR BR 17 18.9 20.9 1 27.6 7.3 1 SMF18A SMF18CA LT BT 18 20 22.1 1 29.2 6.9 1 SMF20A SMF20CA LV BV 20 22.2 24.5 1 32.4 6.2 1 SMF22A SMF22CA LX BX 22 24.4 26.9 1 35.5 5.7 1 SMF24A SMF24CA LZ BZ 24 26.7 29.5 1 38.9 5.2 1 SMF26A SMF26CA ME CE 26 28.9 31.9 1 42.1 4.8 1 SMF28A SMF28CA MG CG 28 31.1 34.4 1 45.4 4.4 1 SMF30A SMF30CA MK CK 30 33.3 36.8 1 48.4 4.2 1 SMF33A SMF33CA MM CM 33 36.7 40.6 1 53.3 3.8 1 www.liownsemi.com 掌握芯技术 Core Technology （V2） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Electrical Characteristics (TA=25℃) Part Number Device Reverse Breakdown Marking Stand-Off Voltage Code Voltage @IT Maximum Test Clamping Current Voltage @IPP Peak Reverse Pulse Leakage Current @VR Uni Bi UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMF36A SMF36CA MP CP 36 40 44.2 1 58.1 3.5 1 SMF40A SMF40CA MR CR 40 44.4 49.1 1 64.5 3.1 1 SMF43A SMF43CA MT CT 43 47.8 52.8 1 69.4 2.9 1 SMF45A SMF45CA MV CV 45 50 55.3 1 72.7 2.8 1 SMF48A SMF48CA MX CX 48 53.3 58.9 1 77.4 2.6 1 SMF51A SMF51CA MZ CZ 51 56.7 62.7 1 82.4 2.5 1 SMF54A SMF54CA NE DE 54 60 66.3 1 87.1 2.3 1 SMF58A SMF58CA NG DG 58 64.4 71.2 1 93.6 2.2 1 SMF60A SMF60CA NK DK 60 66.7 73.7 1 96.8 2.1 1 SMF64A SMF64CA NM DM 64 71.1 78.6 1 103.0 2.0 1 SMF70A SMF70CA NP DP 70 77.8 86 1 113.0 1.8 1 SMF75A SMF75CA NR DR 75 83.3 92.1 1 121.0 1.7 1 SMF78A SMF78CA NT DT 78 86.7 95.8 1 126.0 1.6 1 SMF85A SMF85CA NV DV 85 94.4 104 1 137.0 1.5 1 SMF90A SMF90CA NX DX 90 100 111 1 146.0 1.4 1 SMF100A SMF100CA NZ DZ 100 111 123 1 162.0 1.3 1 SMF110A SMF110CA PE EE 110 122 135 1 177.0 1.2 1 SMF120A SMF120CA PG EG 120 133 147 1 193.0 1.1 1 SMF130A SMF130CA PK EK 130 144 159 1 209.0 1.0 1 SMF150A SMF150CA PM EM 150 167 185 1 243.0 0.8 1 SMF160A SMF160CA PP EP 160 178 197 1 259.0 0.8 1 SMF170A SMF170CA PR ER 170 189 209 1 275.0 0.8 1 www.liownsemi.com 掌握芯技术 Core Technology （V2） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Ratings and Characteristic Curves (Ta=25℃ unless otherwise noted) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve Peak Pulse Power (PPP) or Current (I PP) Derating in Percentage % PPP - Peak Pulse Power (W) 10000 1000 100 10 0.1 1 10 100 1000 tP-Pulse Duration (µs) 60 Tjmax=150℃ 40 20 0 0 50 75 100 125 150 TA-Ambient Temperature (℃) 175 Figure 4. Typical Junction Capacitance TJ =25℃ Pulse Width(td ) is defined as the point where the peak current decays to 50% of IPP M tr=10µs 1000 Uni-directional V=0V 100 Cj (pF) Peak Value IPPM Half Value IPPM (IPPM/2) 50 10/1000µs Waveform as defined by R.E.A 1.0 2.0 3.0 Bi-directional V=0V 10 td 0 100 Figure 5. Steady State Power Dissipation Derating Curve TJ=25℃ f=1.0MHz Vsig=50mVp-p 1 4.0 1 Time (ms) 10 100 1000 VBR-Reverse Breakdown Voltage (V) Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 1.0 35 Peak Forward Surve Current (A) PM(AV), Steady State Power Dissipation (W) 25 10000 150 Peak Pulse Current, %IRSM 80 10000 Figure 3. Pulse Waveform 0 100 0.75 0.50 Tjmax=150℃ 0.25 0 0 25 www.liownsemi.com 50 75 100 125 150 TL-Lead Temperature(℃） 175 Tj = Tj max. 8.3 ms Single Half Sine-Wave 30 25 20 15 10 5 0 掌握芯技术 Core Technology 1 10 5 50 Number of Cycles at 60Hz 100 （V2） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Marking Code Cathode Marking XY XY XY Device Code Device Code Part Number Code SMF XX C A A：5% VBR Tolerance C：Bidirectional；No C：Unidirectional VR Voltage 200W Series Code Soldering Parameters www.liownsemi.com 掌握芯技术 Core Technology （V2） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Packaging Specification Tape For Uni-Devices 7 Inches Reel d D www.liownsemi.com W D Φ178.0±2.0 d Φ13.0 W 9.5 Quantity: 3000PCS/Reel 掌握芯技术 Core Technology （V2）