BZD17C12P RUG

BZD17C11P – BZD17C220P Taiwan Semiconductor 0.8W, 11V - 220V Zener Diode FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 11 - 220 V Test current IZT 4 - 50 mA Ptot 0.8 W TJ MAX 175 °C Package Sub SMA Configuration Single die APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit MECHANICAL DATA ● ● ● ● ● ● Case: Sub SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT VF 1.2 V 2.3 W 0.8 W PZSM 300 W Junction temperature TJ - 55 to +175 °C Storage temperature TSTG - 55 to +175 °C Forward voltage @ IF = 0.2A TL = 80°C Power dissipation TA = 25°C Non-repetitive peak pulse power dissipation 100μs square pulse (2) (1) Ptot Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge 1 Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance (1) SYMBOL TYP UNIT RӨJL 30 °C/W RӨJA 180 °C/W Notes: 1. Mounted on Cu-Pad size 5mm x 5mm ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING BZD17CxP Sub SMA 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 11V(BZD17C11P) to 220V(BZD17C220P) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Working Voltage Part number Marking code VZ @ IZT Differential Resistance Temperature Coefficient Test Current rdif @ IZ αZ @ IZ IZT IR VR mA μA V (1) o Ω V %/ C Min Max Typ Max Min Max Reverse Current@ Reverse Voltage Max BZD17C11P J2 10.4 11.6 4 7 0.05 0.10 50 4.0 8.2 BZD17C12P J3 11.4 12.7 4 7 0.05 0.10 50 3.0 9.1 BZD17C13P J4 12.4 14.1 5 10 0.05 0.10 50 2.0 10 BZD17C15P J5 13.8 15.6 5 10 0.05 0.10 25 1.0 11 BZD17C16P J6 15.3 17.1 6 15 0.06 0.11 25 1.0 12 BZD17C18P J7 16.8 19.1 6 15 0.06 0.11 25 1.0 13 BZD17C24P K0 22.8 25.6 7 15 0.06 0.11 25 1.0 18 BZD17C27P K1 25.1 28.9 7 15 0.06 0.11 25 1.0 20 BZD17C33P K3 31 35 8 15 0.06 0.11 25 1.0 24 BZD17C36P K4 34 38 21 40 0.06 0.11 10 1.0 27 BZD17C39P K5 37 41 21 40 0.06 0.11 10 1.0 30 BZD17C43P K6 40 46 24 45 0.07 0.12 10 1.0 33 BZD17C47P K7 44 50 24 45 0.07 0.12 10 1.0 36 BZD17C51P K8 48 54 25 60 0.07 0.12 10 1.0 39 BZD17C62P L0 58 66 25 80 0.08 0.13 10 1.0 47 BZD17C68P L1 64 72 25 80 0.08 0.13 10 1.0 51 BZD17C75P L2 70 79 30 100 0.08 0.13 10 1.0 56 BZD17C100P L5 94 106 60 200 0.09 0.13 4 1.0 75 BZD17C120P L7 114 127 150 300 0.09 0.13 4 1.0 91 BZD17C180P M1 168 191 280 450 0.09 0.13 4 1.0 130 BZD17C200P M2 188 212 350 750 0.09 0.13 4 1.0 150 BZD17C220P M3 208 233 430 900 0.09 0.13 4 1.0 160 Notes: 1. Pulse test: tp ≦5ms. 2 Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Power Dissipation vs. Ambient Temperature Fig.2 Typical Junction Capacitance 1000 TL 2.0 C12P CAPACITANCE (pF) POWER DISSIPATION(W) 2.4 1.6 1.2 TA 0.8 100 C27P 0.4 C200P 0.0 25 55 85 115 145 10 175 0 TEMPERATURE (°C) 1 2 3 REVERSE VOLTAGE (V) 1010 1 UF1DLW TJ=125°C TJ=25°C 10.1 (A) INSTANTANEOUS FORWARD CURRENT (A) Fig.3 Typical Forward Characteristics 0.01 0.1 0.001 0.7 0.3 Pulse width 0.4 0.8 0.5 0.9 0.6 0.7 1.0 0.8 0.9 1.1 1 1.1 1.2 FORWARD VOLTAGE (V) 3 Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Sub SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM 4 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: L2103