MBR10200CTHC0G

MBR1035CT – MBR10200CT Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 10 A VRRM 35 - 200 V IFSM 120 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER MBR 1035 CT MBR 1035 CT MBR 1045 CT MBR 1045 CT MBR 1050 CT MBR 1050 CT MBR 1060 CT MBR 1060 CT VRRM 35 45 50 60 90 100 150 200 V VR(RMS) 24 31 35 42 63 70 105 140 V SYMBOL Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) MBR MBR MBR MBR 1090 10100 10150 10200 UNIT CT CT CT CT MBR MBR MBR MBR 1090 10100 10150 10200 CT CT CT CT IF 10 A IFSM 120 A IRRM 1 0.5 IFRM 10 1 A A Version: O2104 MBR1035CT – MBR10200CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Critical rate of rise of offstate voltage Junction temperature Storage temperature SYMBOL MBR 1035 CT MBR 1045 CT MBR 1050 CT MBR 1060 CT MBR MBR MBR MBR 1090 10100 10150 10200 UNIT CT CT CT CT dv/dt 10,000 V/μs TJ -55 to +150 °C TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBR1035CT MBR1045CT MBR1050CT MBR1060CT MBR1090CT MBR10100CT MBR10150CT MBR10200CT MBR1035CT MBR1045CT MBR1050CT MBR1060CT MBR1090CT MBR10100CT MBR10150CT MBR10200CT MBR1035CT MBR1045CT MBR1050CT MBR1060CT MBR1090CT MBR10100CT MBR10150CT MBR10200CT MBR1035CT MBR1045CT MBR1050CT MBR1060CT MBR1090CT MBR10100CT MBR10150CT MBR10200CT SYMBOL TYP MAX UNIT - 0.70 V - 0.80 V - 0.85 V - 0.88 V - 0.80 V - 0.90 V - 0.95 V - 0.98 V - 0.57 V - 0.65 V - 0.75 V - 0.78 V - 0.67 V - 0.75 V - 0.85 V - 0.88 V IF = 5A, TJ = 25°C IF = 10A, TJ = 25°C VF IF = 5A, TJ = 125°C IF = 10A, TJ = 125°C 2 Version: O2104 MBR1035CT – MBR10200CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBR1035CT MBR1045CT MBR1050CT MBR1060CT MBR1090CT MBR10100CT MBR10150CT MBR10200CT MBR1035CT MBR1045CT MBR1050CT MBR1060CT MBR1090CT MBR10100CT MBR10150CT MBR10200CT SYMBOL TJ = 25°C TYP MAX UNIT - 100 µA - 15 mA - 10 mA - 2 mA - 5 mA IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR10xCT TO-220AB 50 / Tube MBR10xCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR1035CT) to 200V(MBR10200CT) 2. “H” means AEC-Q101 qualified 3 Version: O2104 MBR1035CT – MBR10200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 CAPACITANCE (pF) 10 5 1000 f=1.0MHz Vsig=50mVp-p 100 0 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C TJ=75°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 MBR1050CT-1060CT MBR1035CT-45CT 10 UF1DLW 1 TJ=125°C 0.1 TJ=25°C MBR1090CT-10100CT 1 MBR10150CT-10200CT 0.01 0.1 0.001 0.4 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.6 0.4 0.5 0.8 0.6 1.0 0.7 0.8 1.2 0.9 1.4 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) 15 8.3ms single half sine wave 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: O2104 1.2 MBR1035CT – MBR10200CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: O2104 MBR1035CT – MBR10200CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: O2104 MBR1035CT – MBR10200CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: O2104