MBR15100CTHC0G

MBR1535CT – MBR15150CT Taiwan Semiconductor 15A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 15 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) MBR SYMBOL 1535 CT MBR 1535 CT VRRM 35 VR(RMS) 24 MBR 1545 CT MBR 1545 CT 45 MBR 1550 CT MBR 1550 CT 50 MBR 1560 CT MBR 1560 CT 60 31 35 42 MBR MBR MBR 1590 15100 15150 UNIT CT CT CT MBR MBR MBR 1590 15100 15150 CT CT CT 90 100 150 V 63 70 105 V IF 15 A IFSM 150 A IRRM 1 IFRM 0.5 15 1 A A Version: I2104 MBR1535CT – MBR15150CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR SYMBOL 1535 1545 1550 1560 1590 15100 15150 UNIT CT CT CT CT CT CT CT PARAMETER dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Critical rate of rise of off-state voltage Notes: 1. tp = 2.0μs, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 10 °C/W Junction-to-case thermal resistance RӨJC 1.5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode CONDITIONS MBR1535CT MBR1545CT MBR1550CT MBR1560CT MBR1590CT MBR15100CT MBR15150CT MBR1535CT MBR1545CT MBR1550CT MBR1560CT MBR1590CT MBR15100CT MBR15150CT MBR1535CT MBR1545CT MBR1550CT MBR1560CT MBR1590CT MBR15100CT MBR15150CT MBR1535CT MBR1545CT MBR1550CT MBR1560CT MBR1590CT MBR15100CT MBR15150CT SYMBOL IF = 7.5A, TJ = 25°C IF = 15A, TJ = 25°C VF IF = 7.5A, TJ = 125°C IF = 15A, TJ = 125°C 2 TYP MAX UNIT - - V - 0.75 V - 0.92 V - 1.05 V - 0.84 V - - V - - V - - V - 0.57 V - 0.65 V - 0.82 V - 0.92 V - 0.72 V - - V - - V - - V Version: I2104 MBR1535CT – MBR15150CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBR1535CT MBR1545CT MBR1550CT MBR1560CT TJ = 25°C MBR1590CT MBR15100CT MBR15150CT MBR1535CT MBR1545CT MBR1550CT MBR1560CT TJ = 125°C MBR1590CT MBR15100CT MBR15150CT SYMBOL TYP MAX UNIT - 500 µA - 300 µA - 100 µA - 10 mA - 7.5 mA - 5 mA IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR15xCT TO-220AB 50 / Tube MBR15xCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR1535CT) to 150V(MBR15150CT) 2. “H” means AEC-Q101 qualified 3 Version: I2104 MBR1535CT – MBR15150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 15 CAPACITANCE (pF) 10 5 MBR1535CT-1560CT 1000 100 MBR1590CT-15150CT f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 0.1 TJ=75°C 0.01 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 1000 10 MBR1535CT-1545CT MBR1550CT-1560CT MBR1590CT-15100CT UF1DLW 100 1 MBR15150CT 100.1 TJ=125°C TJ=125°C 1 0.01 TJ=25°C TJ=25°C 0.1 0.001 0.0 0.3 0.20.4 0.40.5 0.6 0.6 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs Pulse width 1% duty cycle 0.8 0.7 1.0 0.8 1.2 0.9 1.4 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) MBR1535CT-1545CT MBR1550CT-15150CT 0.001 100 Fig.4 Typical Forward Characteristics 100 1 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 1 (A) AVERAGE FORWARD CURRENT (A) 20 8.3ms single half sine wave 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: I2104 1.2 MBR1535CT – MBR15150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: I2104 MBR1535CT – MBR15150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2104 MBR1535CT – MBR15150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: I2104