GA35XCP12-247

GA35XCP12-247 IGBT/SiC Diode Co-pack Features Package • Optimal Punch Through (OPT) technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier • Best RBSOA/SCSOA capability in the industry • High junction temperature • Industry standard packaging • RoHS Compliant VCES = 1200 V ICM VCE(SAT) = 35 A = 3.0 V 2 1 1 2 3 3 TO – 247AB Advantages Applications • Industry's highest switching speeds • High temperature operation • Improved circuit efficiency • Low switching losses • Solar Inverters • Aerospace Actuators • Server Power Supplies • Resonant Inverters > 100 kHz • Inductive Heating • Electronic Welders Maximum Ratings, at Tj = 150 °C, unless otherwise specified Parameter Symbol Conditions Values Unit 1200 35 ± 20 -40 to +150 -40 to +150 V A V ºC ºC A A A K/W K/W IGBT Collector-Emitter Voltage DC-Collector Current Gate Emitter Peak Voltage Operating Temperature Storage Temperature VCES ICM VGES Tvj Tstg Free-wheeling diode DC-Forward Current Non Repetitive Peak Forward Current Surge Non Repetitive Forward Current IF IFM IF,SM tP = 10 ms, half sine, T c = 25 ºC 35 tbd tbd RthJC RthJC IGBT SiC diode 0.34 0.31 Tc 105 ºC Tc 105 ºC Tc = 25 ºC, tP = 10 s Thermal Characteristics Th. Resistance Junction to Case Th. Resistance Junction to Case Mechanical Properties Mounting Torque min. 1.5 Md Values typ. max. 2 Nm http://www.genesicsemi.com/index.php/silicon-carbide-products/igbt--sic-rectifier/igbt--sic-rectifier-copack January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 1 of 5 GA35XCP12-247 Electrical Characteristics Parameter IGBT Gate Threshold Voltage Collector-Emitter Leakage Current Gate-Leakage Current Collector-Emitter Threshold Voltage Collector-Emitter Slope Resistance Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Reverse Bias Safe Operating Area Short Circuit Current Short Circuit Duration Rise Time Fall Time Turn On Delay Time Turn Off Delay Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Symbol Conditions VGE(th) ICES,25 ICES,150 IGES VCE(TO) RCE,25 RCE,150 VCE(SAT) Cies Coes Cres QG RBSOA Isc tsc tr tf td(on) td(off) Eon Eoff VGE = VCE, IC = 0.6 mA, Tj = 25 ºC VGE = 0 V, VCE = VCES, Tj = 25 ºC VGE = 0 V, VCE = VCES, Tj = 150 ºC VCE = 0 V, VGE = 20 V, Tj = 25 ºC Tj= 25ºC VGE = 15 V, Tj = 25 ºC VGE = 15 V, Tj = 150 ºC IC = 35 A, VGE = 15 V, T j = 25 ºC(150 ºC) min. VCC= 800 V, IC = 35 A, Rgon = Rgoff = 22 , VGE(0n)= 15 V, VGE(0ff)= -8 V, Tj= 125 ºC VF IF = 35 A, VGE = 0 V, Tj = 25 ºC (150 ºC ) 2.6(3.5) V VD(TO) Irrm trr Tj = 25 ºC 0.8 3.01 36 V A ns 190 A/ s Tj = 125 ºC, Rg = 56 , VCC = 900 V, VGE = ±15 V 6.5 0.2 Unit 85 205 40 232 2.66 4.35 VCC= 800 V, IC = 35 A, VGE= 15V Tj=125 ºC, Rg=56 , VCC=1200 V, VGE=15 V 6 0.02 0.3 max. V mA mA nA V m m V nF nF nF nC A A s ns ns ns ns mJ mJ VGE = 0 V, VCE = 25 V, f = 1 MHz 5.5 Values typ. 500 1.1 50 87.5 3.0(3.9) tbd tbd tbd 50 45 60 10 Free-wheeling diode Forward Voltage Threshold Voltage at Diode Peak Reverse Recovery Current Reverse Recovery Time Diode peak rate of fall of reverse recovery current during tb Figure 1: Typical Output Characteristics at 25 oC January 2011 dIrr/dt IF = 35 A, VGE = 0 V, VR = 650 V -dIF/dt = 300 A/ s, Tj = 125 ºC Figure 2: Typical Output Characteristics at 150 oC Preliminary Datasheet http://www.genesicsemi.com Page 2 of 5 GA35XCP12-247 Figure 3: Typical Transfer Characteristics Figure 4: Typical Blocking Characteristics Figure 5: Typical FWD Forward Characteristics Figure 6: Typical Turn On Gate Charge Figure 7: Typical Turn On Energy Losses and Switching Times Figure 8: Typical Turn Off Energy Losses and Switching Times January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 3 of 5 GA35XCP12-247 Figure 9: Typical Reverse Recovery Currents and Times Package Dimensions: TO-247AB PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 4 of 5 GA35XCP12-247 Revision History Date 2011/01/06 Revision 1 Comments First generation release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 5 of 5