BUJ103AD,118

BUJ103AD Silicon diffused power transistor Rev. 3 — 18 October 2016 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballasts  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  4 A  hFEsat = 12.5 (typ) 2. Pinning information Table 1. Pinning Pin Description 1 base 2 collector 3 emitter mb mounting base; connected to collector Simplified outline Symbol mb C [1] B E sym123 SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. BUJ103AD WeEn Semiconductors Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type number BUJ103AD Package Name Description Version D-PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428 4. Limiting values Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM peak collector-emitter voltage VBE = 0 V - 700 V VCBO collector-base voltage open emitter - 700 V VCEO collector-emitter voltage open base - 400 V IC collector current (DC) - 4 A ICM peak collector current - 8 A IB base current (DC) - 2 A IBM peak base current - 4 A Ptot total power dissipation - 80 W Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tmb  25 C; see Figure 1 001aab993 120 Pder (%) 80 40 0 0 40 80 120 160 Tmb (°C) P tot P der  %  = -------------------------  100% P tot  25 C  Fig 1. Normalized total power dissipation as a function of mounting base temperature BUJ103AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 2 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base see Figure 2 Rth(j-a) [1] thermal resistance from junction to ambient Min Typ Max Unit - - 1.56 K/W - 75 - K/W Device mounted on a printed-circuit board; minimum footprint. [1] 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10−1 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Characteristics Table 5. Tmb = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES ICBO collector-emitter cut-off current VBE = 0 V; VCE = VCESMmax [1] - - 1.0 mA VBE = 0 V; VCE = VCESMmax; Tj = 125 C [1] - - 2.0 mA collector-base cut-off current VBE = 0 V; VCE = VCESMmax [1] - - 1.0 mA [1] - - 0.1 mA ICEO collector-emitter cut-off current VCEO = VCEOMmax = 400 V IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; L = 25 mH; see Figure 3 and 4 400 - - V VCEsat collector-emitter saturation voltage IC = 3.0 A; IB = 0.6 A; see Figure 10 - 0.25 1.0 V VBEsat base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A; see Figure 11 - 0.97 1.5 V hFE DC current gain IC = 1 mA; VCE = 5 V; see Figure 9 10 17 32 IC = 500 mA; VCE = 5 V 13 22 32 BUJ103AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 3 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor Table 5. Characteristics …continued Tmb = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit hFEsat DC saturation current gain IC = 2.0 A; VCE = 5 V 11 16 22 IC = 3.0 A; VCE = 5 V - 12.5 - - 0.52 0.6 s - 2.7 3.3 s - 0.3 0.35 s - 1.2 1.4 s - 30 60 ns - - 1.8 s - - 120 ns Dynamic characteristics Switching times (resistive load); see Figure 5 and 6 ton turn-on time tstg storage time tf fall time ICon = 2.5 A; IBon = IBoff = 0.5 A; RL = 75  Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time ICon = 2 A; IBon = 0.4 A; LB = 1 H; VBB = 5 V Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time [1] ICon = 2 A; IBon = 0.4 A; LB = 1 H; VBB = 5 V; Tj = 100 C Measured with half sine-wave voltage (curve tracer). IC (mA) 50 V 100 Ω to 200 Ω 250 horizontal oscilloscope vertical 100 6V 300 Ω 1Ω 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 3. Test circuit for collector-emitter sustaining voltage BUJ103AD Product data sheet Fig 4. Oscilloscope display for collector-emitter sustaining voltage test waveform All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 4 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor IC ICon 90 % 90 % VCC RL VIM 0 10 % RB t DUT tf tp ts IB ton T toff 001aab989 IBon 10 % t VIM = 6 V to +8 V; VCC = 250 V; tp = 20 s;  = tp/T = 0.01. tr ≤ 30 ns −IBoff RB and RL calculated from ICon and IBon requirements. Fig 5. Test circuit for resistive load switching Fig 6. 001aab990 Switching times waveforms for resistive load IC ICon 90 % VCC LC 10 % IBon VBB LB DUT tf ts toff IB 001aab991 t IBon t −IBoff VCC = 300 V; VBB = 5 V; LC = 200 H; LB = 1 H. Fig 7. Test circuit for inductive load switching BUJ103AD Product data sheet 001aab992 Fig 8. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 5 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor 001aab994 102 001aab995 2.0 Tj = 25 °C VCEsat (V) IC = 1 A 2A 3A 4A 1.6 hFE VCE = 5 V 1.2 10 1V 0.8 0.4 1 10−2 10−1 1 0 10−2 10 10−1 1 IC (A) 10 IB (A) Tj = 25 C. Fig 9. DC current gain as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of base current; typical values 001aab996 1.4 VBEsat (V) 1.2 001aab997 VCEsat (V) 0.5 0.4 1.0 0.8 0.3 0.6 0.2 0.4 0.1 0.2 0 10−1 1 0 10−1 10 1 IC (A) IC/IB = 4. IC/IB = 4. Fig 11. Base-emitter saturation voltage as a function of collector current; typical values BUJ103AD Product data sheet 10 IC (A) Fig 12. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 6 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor 001aac000 10 IC (A) 8 VCC 6 LC IBon VBB VCL(CE) probe point 4 LB DUT 001aab999 2 0 0 VCEclamp  1000 V; VCC = 150 V; VBB = 5 V; LB = 1 H; LC = 200 H. Fig 13. Test circuit for reverse bias safe operating area 400 200 800 1000 VCEclamp (V) 600 Tj  Tj(max). Fig 14. Reverse bias safe operating area 001aac001 102 IC (A) duty cycle = 0.01 10 ICM(max) IC(max) II(3) (1) tp = 20 μs 50 μs 100 μs 200 μs 500 μs DC 1 (2) 10−1 I(3) 10−2 III(3) 10−3 1 102 10 103 VCEclamp (V) Tmb  25 C; Mounted with heatsink compound and 30  5 Newton force on the center of the envelope. (1) Ptot maximum and Ptot peak maximum lines. (2) Second breakdown limits. (3) I = Region of permissible DC operation. II = Extension for repetitive pulse operation. III = Extension during turn-on in single transistor converters provided that RBE  100  and tp  0.6 s. Fig 15. Forward bias safe operating area 7. Package information Epoxy meets requirements of UL94 V-0 at 1⁄8 inch. BUJ103AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 7 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor 8. Package outline Fig. 16. Package outline DPAK (SOT428) BUJ103AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 8 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor 9. Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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All rights reserved 9 / 10 BUJ103AD WeEn Semiconductors Silicon diffused power transistor Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUJ103AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev.3 18 October 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 10 / 10