BUJ302AD,118

BUJ302AD NPN power transistor 28 April 2018 Product data sheet 1. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits • • • • • Fast switching Low thermal resistance Surface mountable package Very high voltage capability Very low switching and conduction losses 3. Applications • • • • DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit ICM peak collector current Fig. 1; Fig. 2; Fig. 3 - - 8 A Ptot total power dissipation Tmb ≤ 25 °C; Fig. 4 - - 80 W VCESM collector-emitter peak voltage VBE = 0 V - - 1050 V Static characteristics hFE [1] DC current gain IC = 0.1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 [1] 48 66 100 IC = 0.8 A; VCE = 3 V; Tmb = 25 °C; Fig. 12 [1] 25 42 50 Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % BUJ302AD WeEn Semiconductors NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 2 C collector[1] 3 E emitter mb C mounting base; connected to collector Graphic symbol C B E sym123 DPAK (SOT428) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 6. Ordering information Table 3. Ordering information Type number BUJ302AD BUJ302AD Product data sheet Package Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 1050 V VCEO collector-emitter voltage IB = 0 A - 400 V VEBO emitter-base voltage IC = 0 A; IE = 2 A; tp < 10 ms - 24 V IC collector current Fig. 1; Fig. 2; Fig. 3 - 4 A ICM peak collector current - 8 A IB base current - 2 A IBM peak base current - 4 A Ptot total power dissipation - 80 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C Tmb ≤ 25 °C; Fig. 4 VCC 003aag027 10 IC (A) LC VCL(CE) probe point 8 IBon VBB 6 LB DUT 001aab999 4 Fig. 2. Test circuit for reverse bias safe operating area 2 0 0 400 800 1200 VCEclamp (V) Fig. 1. Reverse bias safe operating area BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 001aac001 102 IC (A) duty cycle = 0.01 10 ICM(max) IC(max) II(3) (1) 1 tp = 20 µs 50 µs 100 µs 200 µs 500 µs DC (2) 10- 1 I(3) 10- 2 III(3) 10- 3 1 102 10 VCEclamp (V) 103 1)Ptot maximum and Ptot peak maximum lines 2)Second breakdown limits 3) I = Region of permissable DC operation II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig. 3. Forward bias safe operating area for Tmb ≤ 25 °C 001aab993 120 Pder (%) 80 40 0 0 40 80 120 Tmb (°C) 160 Fig. 4. Normalized total power dissipation as a function of mounting base temperature BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 1.56 K/W Rth(j-a) thermal resistance from junction to ambient free air printed circuit board (FR4) mounted; minimum footprint - 75 - K/W 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10- 1 0.05 0.02 Ptot δ= tp T 0.01 tp 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 1 t T tp (s) 10 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES collector-emitter cut-off VBE = 0 V; VCE = 1050 V current (base shorted) - 0.2 10 µA ICEO collector-emitter cut-off VCE = 400 V; IB = 0 A; Tmb = 25 °C current (base open) - 10 250 mA V(BR)EBO emitter-base breakdown voltage (collector open) IB = 1 mA; IC = 0 A; Tmb = 25 °C 15 19 - V VCEOsus collector-emitter sustaining voltage (base open) IB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 °C; Fig. 6; Fig. 7 400 470 - V VCEsat collector-emitter saturation voltage IC = 1 A; IB = 0.2 A; Tmb = 25 °C; Fig. 8; [1] Fig. 9 - 0.15 0.5 V IC = 3.5 A; IB = 1 A; Tmb = 25 °C; Fig. 8; [1] Fig. 9 - 0.6 1.5 V [1] - 1.1 1.5 V IC = 0.1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 [1] 48 66 100 IC = 0.8 A; VCE = 3 V; Tmb = 25 °C; Fig. 12 [1] 25 42 50 - - 3.5 µs - - 500 ns VBEsat base-emitter saturation IC = 3.5 A; IB = 1 A; Tmb = 25 °C; voltage Fig. 10 hFE DC current gain [1] Dynamic characteristics ts storage time tf fall time [1] IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 60 Ω; VBB = -5 V; Tmb = 25 °C; resistive load; tp = 300 µs; Fig. 13; Fig. 14 Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % 50 V 100 Ω to 200 Ω IC (mA) horizontal oscilloscope 250 vertical 6V 300 Ω 30 Hz to 60 Hz 1Ω 100 001aab987 Fig. 6. Test circuit for collector-emitter sustaining voltage 10 0 min VCE (V) VCEOsus 001aab988 Fig. 7. Oscilloscope display for collector-emitter sustaining voltage test waveform BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 003aaf994 10 003aaf996 6 VCEsat (V) 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A IC (A) 1 4 0.4 A Tj = 125 °C IB = 0.2 A 10-1 10-2 10-2 2 Tj = 25 °C 10-1 1 IC (A) 0 10 Fig. 8. Collector-emitter saturation voltage as a function of collector current; typical values 4 6 8 VCE (V) 10 003aaf992 102 VCE = 5 V VBEsat (V) 1.0 0.8 2 Fig. 9. Collector current as a function of collectoremitter voltage; typical values 003aaf993 1.2 0 hFE Tj = 25 °C Tj = 25 °C Tj = 125 °C 10 Tj = 125 °C 0.6 0.4 0.2 10-2 10-1 1 IC (A) 1 10-2 10 Fig. 10. Base-emitter saturation voltage as a function of collector current; typical values BUJ302AD Product data sheet 10-1 1 IC (A) 10 Fig. 11. DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 BUJ302AD WeEn Semiconductors NPN power transistor VCC 003aaf991 102 VCE = 3 V RL hFE VIM 0 Tj = 25 °C Tj = 125 °C RB DUT tp T 10 001aab989 Fig. 13. Test circuit for resistive load switching 1 10-2 10-1 1 IC (A) 10 Fig. 12. DC current gain as a function of collector current; typical values IC ICon 90 % 90 % 10 % IB ts ton t tf toff IBon 10 % t tr ≤ 30 ns - IBoff 001aab990 Fig. 14. Switching times waveforms for resistive load BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 10. Package outline Fig. 15. Package outline DPAK (SOT428) BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 11. Soldering Footprint information for reflow soldering of DPAK (SOT428) package SOT428 7 6.15 5.9 5.8 1.8 1 4.725 4.6 5.75 5.65 6.5 1.15 3.6 6 2.45 6 6.125 0.3 2.4 2.3 1.3 1.5 1.4 1.65 4.57 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 14-03-12 14-03-17 sot428_fr Fig. 16. Wave soldering footprint for DPAK (SOT428) BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 BUJ302AD WeEn Semiconductors NPN power transistor Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BUJ302AD Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 BUJ302AD WeEn Semiconductors NPN power transistor Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 BUJ302AD WeEn Semiconductors NPN power transistor 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 5 9. Characteristics..............................................................6 10. Package outline.......................................................... 9 11. Soldering................................................................... 10 12. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 28 April 2018 BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13