BSS138

R UMW SMD Type UMW BSS138 N-Channel MOSFET ■ Features ● VDS (V) = 50V SOT–23 ● ID = 300 mA (VGS = 10V) ● RDS(ON) ＜ 2.5Ω (VGS = 10V) ● RDS(ON) ＜ 3.5Ω (VGS =2.5V) ● Low On-Resistance ● ESD Rating: 1.5KV HBM 1. GATE MARKING 2. SOURCE 3. DRAIN SS ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 50 Drain-Gate Voltage RGS≤ 20KΩ VDG 50 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 300 mA Power Dissipation PD 300 mW RthJA 417 ℃/W TJ 150 Tstg -55 to 150 Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS , ID=250μA Gate Threshold Voltage Static Drain-Source On-Resistance RDS(On) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Min Typ Max 50 0.7 V 0.5 uA ±10 uA 1.5 V VGS=10V, ID=500mA 2.5 VGS=2.5V, ID=500mA 3.5 VDS=25V, ID=0.3A,f=1KHz 100 Ω mS 50 VGS=0V, VDS=10V, f=1MHz 25 Reverse Transfer Capacitance Crss 8 Turn-On DelayTime td(on) 20 Turn-Off DelayTime td(off) www.umw-ic.com Unit VDS=30V, ID=0.3A,RG=50Ω 1 20 pF ns 友台半导体有限公司 R UMW SMD Type UMW BSS138 RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE ( ■ Typical Characterisitics 0.6 V GS = 3.5V T j = 25°C ID , DRAIN-SOURC E CURRENT (A) 0.5 V GS = 3.25V 0.4 V GS = 3.0V 0.3 V GS = 2.75V 0.2 V GS = 2.5V 0.1 0 0 2 1 3 5 4 6 7 8 10 9 2.45 2.25 2.05 V GS = 10V ID = 0.5A 1.85 1.65 1.45 V GS = 4.5V ID = 0.1A 1.25 1.05 0.85 0.65 -55 2 V DS = 1V VGS(th), GATE THRESHOLD VOLTAGE (V) 0.8 I D , DRAIN-SOURCE CURRENT (A) 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature V DS , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Currentvs.Drain-SourceVoltage 0.7 95 45 -5 -55° C 0.6 25 ° C 0.5 150 ° C 0.4 0.3 0.2 0.1 1.8 1.6 ID = 250uA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 -55 -40 -25 -10 5 0 0.5 1 1.5 2 2.5 3.5 3 4 4.5 V GS , GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 6 20 35 50 65 80 95 110 125 140 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 1 V GS = 2.5V 5 ID, DIODE CURRENT (A) 150 ° C 4 3 2 25 ° C 1 0.1 150 ° C -55° C 0.01 25 ° C -55° C 0.001 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 6 Body Diode Current vs. Body Diode Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Drain-Source On Resistance vs. Drain Current www.umw-ic.com 0 2 友台半导体有限公司 R UMW SMD Type UMW BSS138 ■ Typical Characterisitics 3.5 100 V GS = 10V 3 V GS = 0V f = 1MHz C, CAPACITANCE (pF) 150 ° C 2.5 2 1.5 25 ° C 1 -55° C C iSS 10 C OSS 0.5 C rSS 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 1 0.5 ID, DRAIN CURRENT (A) Fig. 7 Drain-Source On Resistance vs. Drain Current www.umw-ic.com 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 8 Capacitance vs. Drain Source Voltage 3 友台半导体有限公司 R UMW SMD Type Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW BSS138 Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 4 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司