HG24C04M/TR

HG24C04 TOW - Wirs Serlal EEPROM Features Wide Voltage Operation -Bidirectional Data Transfer Protocol - VCC = 1.8V to 5.5V -1 MHz (2.5-5V), 400 kHz (1.8V) Compatibility Operating Ambient Temperature: -40℃ to +85℃ -Write Protect Pin for Hardware Data Protection Internally Organized: - 16-byte Page 4K, Write Modes - HG24C04, 512 X 8 (4K bits) -Partial Page Writes Allowed -Schmitt Trigger, Filtered Inputs for Noise Suppression -Self-timed Write Cycle (5 ms max) High-reliability - Endurance: 1 Million Write Cycles - Data Retention: 100 Years General Description The provides 4096 bits of HG24C04 serial electrically erasable and programmable read -only memory (EEPROM) organized as 512 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low -power and The HG24C04 TSSOP ,8-lead is available in space-saving MSOP, 8 PAD DFN and low-voltage operation are essentia l. 8-lead PDIP, 8-lead SOP, 8-lead SOT23-5 packages and is accessed via a two-wire serial interface. Pin Configuration Pin Name A0-A2 SDA SCL WP GND VCC Founctions Address Inputs Serial Data Serial Clock Input Write Protect Ground Power Supply 8 - lead PDIP http://www.hgsemi.com.cn 8 - lead SOP 1 2015 JAN HG24C04 PACKAGING INFORMATION HG 24C 04 M /TR Hgsemi Designator Product Family /TR = Taping Package Type 24C=Standard I2C-compatible Serial EEPROM M = SOP-8 N = DIP-8 Device Density 04 = 4 Kiloblt ＭＡＲＫＩＮＧ http://www.hgsemi.com.cn 2 2015 JAN HG24C04 Block Diagram http://www.hgsemi.com.cn 3 2015 JAN HG24C04 Pin Descriptions DEVICE/PAGE ADDRESSES (A2, A1 and A0): The HG24C04 uses the A2 and A1 inputs for hard wire addressing and a total of four 4K devices may be addressed on a single bus system. The A0 pin is a no conn ect and can be connected to ground. SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is open-drain driven and may be wire-Read with any number of other open-drain or open- collector devices. SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. WRITE PROTECT (WP): The HG24C04 has a Write Protect pin that provides hardware data protection. The Write Protect pin allows normal read/write operations when connected to ground (GND). When the Write Protect pin is connected to VCC , the write protection feature is enabled and operates as shown in the following Table 2:Write Protect WP Pin Status At Vcc At GND Part of the Array Protected HG24C04D Full(4K)Array Normal Read/Write Operations Memory Organization HG24C04, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data word address for random word addressing. http://www.hgsemi.com.cn 4 2015 JAN HG24C04 Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (see to Figure 1 on page 4). Data changes during SCL high periods will indicate a start or stop condition as define d below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see to Figure 2 on page 4). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a s tandby power mode (see Figure 2 on page 4). ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sen ds a "0" to acknowledge that it has received each word. This happens during the ninth clock cycle. STANDBY MODE: The HG24C04 features a low-power standby mode which is enabled: (a) upon power-up and (b) after the recei pt of the STOP bit and the completion of any internal operations. MEMORY RESET: After an interruption in protocol, power loss or system reset, any two-wire part can be reset by following these steps: 1. Clock up to 9 cycle s. 2. Look for SDA high in each cycle while SCL is high. 3. Create a start cond ition. Figure 1: Data Validity Figure 2: Start and Stop Definition http://www.hgsemi.com.cn 5 2015 JAN HG24C04 Figure 3: Output Acknowledge Device Addressing The 4K EEPROM devices all require an 8 - bit device address word following a start condition to enable the chip for a read or write operation (see to Figure 4 on page 7). The device address word consists of a mandatory "1", "0" sequence for the first four most significant bits as shown. This is common to all the Serial EEPROM devices. The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a memory page address bit. The two device add ress bits must compare to their corresponding hardwired input pins. The A0 pin is no conn ect. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device add ress, the EEPROM will output a "0 ". If a compare is not made, the chip will return to a standby state. http://www.hgsemi.com.cn 6 2015 JAN HG24C04 Write Operations BYTE WRITE: A write operation requires an 8-bit data word address follo wing the device address wo rd and acknowledgm en t. Upon receipt of this address, the EEPROM will again respond with a "0" and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a "0" and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is comp lete (see Figure 5 on page 7). PAGE WRITE: The 4K -devices are capable of 16-byte page writes. A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to seven 4K more data words. The EEPROM will respond with a "0" after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 6 on page 7). The data word address lower three 4K bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than eight 4K data words are tr ansmitted to the EEPROM, the data word address will "roll over" and previous data will be overwritten. ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowled ge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a "0", allowi ng the read or write sequence to continue. Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to "1". There are three read operations: current address read, random address read and sequential read. CURRENT ADDRESS READ: The internal data word address counter maintains the last accessed address, and incremented by one.*This address stays valid between operations as long as the chip power is maintained. The address "roll over" during read is from the last byte of the last memory page to the first byte of the first page.The address "roll over" during write is from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to "1" is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input "0" but does generate a following stop condition (see Figure 7 on page 8). http://www.hgsemi.com.cn 7 2015 JAN HG24C04 Read Operations *For 16K EEPROM, we also provide special addressing product for certain applications, that is, . only lower 8 bits of the internal data word address counter maintains the last accessed address, the higher 3 bits (P2, P1, P0) wil l follow the device address input at each current address read .So, please contact your dealer for specia l ordering . RANDOM READ: A random read requires a "dummy" byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledg ed by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a "0" but does generate a following stop condition (see Fig ure 8 on page 8). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowled ge. As long as the EEPROM receives an ack nowled ge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will "roll over" and the sequen tial read will continue.The sequential read operation is terminated when the microcontroller does not respond with a "0" but does generate a following stop condition (see Figure 9 on pag e 8). Figure 4: Device Address Figure 5: Byte Write http://www.hgsemi.com.cn 8 2015 JAN HG24C04 Figure 6: Page Write Figure 7: Current Address Read Figure 8: Random Read http://www.hgsemi.com.cn 9 2015 JAN HG24C04 Figure 9: Sequential Read Electrical Characteristics Absolute Maximum Stress Ratings Comments DC Supply Voltage……………………..-0.3V to +6.5V Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress Input / Output Voltage ……...GND-0.3V to VCC+0.3V ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational Operating Ambient Temperature . . . . . -40℃ to +85℃ sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for Storage Temperature . . . . . . . . . . . . -65℃ to +150℃ extended periods may affect device reliability. DC Electrical Characteristics Applicable over recommended operating range from: TA = -40℃ to +85℃,VCC = +1.7V to +5.5V (unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Supply Voltage Vcc 1.8 — 5.5 V Supply Current VCC = 5.0V ICC1 — 0.4 1.0 mA READ at 400KHz Supply Current VCC = 5.0V ICC2 — 2.0 3.0 mA WRITE at 400KHz Standby Current ISB — — 3.0 μA VIN=VCC or GND Input Leakage Current ILI — — 3.0 μA VIN=VCC or GND Output Leakage Current ILO — 0.05 3.0 μA VOUT=VCC or GND Input Low Level VIL1 -0.3 — Vcc*0.3 V Vcc=1.8V to 5.5V Input High Level VIH1 Vcc*0.7 — Vcc+0.3 V Vcc=1.8V to 5.5V Input Low Level VIL2 -0.3 — Vcc*0.2 V Vcc=1.7V Input High Level VIH2 Vcc*0.7 — Vcc+0.3 V Vcc=1.7V Output Low Level VCC =5.0V VOL3 — — 0.4 V IOL=3.0mA Output Low Level VCC =3.0V VOL2 — — 0.4 V IOL=2.1mA Output Low Level VCC =1.7V VOL1 — — 0.2 V IOL=0.15mA http://www.hgsemi.com.cn 10 Condition 2015 JAN HG24C04 apac ance ApplicableParameter over recommended operatingSymbol range from TAMin. = 25℃, f = 1.0 MHz, VCCMax. = +1.7V Typ. Unit Condition Input/Output Capacitance (SDA) CI/O - - 8 pF VI/O = 0V Input Capacitance (A0, A1, A2, SCL) CIN - - 6 pF VIN = 0V AC Electrical Characteristics Parameter Symbol 1.7v < Vcc < 2.5v 2.5v < Vcc < 5.5v Min. Typ. Max. Min. Typ. Max. Units Clock Frequency, SCL fSCL - - 400 - - 1000 KHz Clock Pulse Width Low tLOW 1.2 - - 0.6 - - s Clock Pulse Width High tHIGH 0.6 - - 0.4 - - s Noise Suppression Time tI - - 50 - - 40 ns tAA 0.05 - 0.9 0.05 - 0.55 s tBUF 1.2 - - 0.5 - - s Start Hold Time tHD.STA 0.6 - - 0.25 - - s Start Setup Time tSU.STA 0.6 - - 0.25 - - s Data In Hold Time tHD.DAT 0 - - 0 - - s Data In Setup Time tSU.DAT 100 - - 100 - - ns Inputs Rise Time(1) tR - - 0.3 - - 0.3 s Inputs Fall Time(1) tF - - 300 - - 100 ns tSU.STO 0.6 - - 0.25 - - s Data Out Hold Time tDH 50 - - 50 - - ns Write Cycle Time tWR - 1.5 5 - 1.5 5 ms Endurance 1M - - - - - Write Cycles Clock Low to Data Out Valid Time the bus must be free before a new transmission can start Stop Setup Time 5.0V, 25℃, Byte Mode http://www.hgsemi.com.cn 11 2015 JAN HG24C04 Bus Timing Figure 10: SCL: Serial Clock, SDA: Serial Data I/O Write Cycle Timing Figure 11: SCL: Serial Clock, SDA: Serial Data I/O Note: http://www.hgsemi.com.cn 12 2015 JAN HG24C04 DIP8 http://www.hgsemi.com.cn 13 2015 JAN HG24C04 SOP8 http://www.hgsemi.com.cn 14 2015 JAN HG24C04 Important statement: Huaguan Semiconductor Co,Ltd. reserves the right to change the products and services provided without notice. Customers should obtain the latest relevant information before ordering, and verify the timeliness and accuracy of this information. Customers are responsible for complying with safety standards and taking safety measures when using our products for system design and machine manufacturing to avoid potential risks that may result in personal injury or property damage. Our products are not licensed for applications in life support, military, aerospace, etc., so we do not bear the consequences of the application of these products in these fields. Our documentation is only permitted to be copied without any tampering with the content, so we do not accept any responsibility or liability for the altered documents. http://www.hgsemi.com.cn 15 2015 JAN