BZV55C4V7

BZV55C1V0 THRU BZV55C75 Silicon Epitaxial Planar Zener Diodes LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range 1) Value Unit Ptot 500 1) mW Tj 175 O Tstg - 55 to + 175 O Symbol Max. Unit RthA 0.3 1) K/mW VF 1 V C C Valid provided that electrodes are kept at ambient temperature Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100 mA 1) Symbol Valid provided that electrodes are kept at ambient temperature www.yongyutai.com PAGE 1 BZV55C1V0 THRU BZV55C75 Characteristics at Ta = 25 OC Zener Voltage Range 1) Type BZV55C1V0 BZV55C2V0 BZV55C2V2 BZV55C2V4 BZV55C2V7 BZV55C3V0 BZV55C3V3 BZV55C3V6 BZV55C3V9 BZV55C4V3 BZV55C4V7 BZV55C5V1 BZV55C5V6 BZV55C6V2 BZV55C6V8 BZV55C7V5 BZV55C8V2 BZV55C9V1 BZV55C10 BZV55C11 BZV55C12 BZV55C13 BZV55C15 BZV55C16 BZV55C18 BZV55C20 BZV55C22 BZV55C24 BZV55C27 BZV55C30 BZV55C33 BZV55C36 BZV55C39 BZV55C43 BZV55C47 BZV55C51 BZV55C56 BZV55C62 BZV55C68 BZV55C75 1) VZnom Dynamic Resistance Reverse Leakage Current Temp. Coefficient of Zener Voltage VZT at lZT ZZT ZZK at IZK Ta = 25 OC Ta = 125 oC at VR (V) (V) (mA) Max. (Ω) Max. (Ω) (mA) Max. (µA) Max. (µA) (V) TKvz (%/K) 0.75 2 2.2 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 0.7...0.8 1.8...2.15 2.08...2.33 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4...4.6 4.4...5 4.8...5.4 5.2...6 5.8...6.6 6.4...7.2 7...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 8 85 85 85 85 85 85 85 85 75 60 35 25 10 8 7 7 10 15 20 20 26 30 40 50 55 55 80 80 80 80 80 90 90 110 125 135 150 200 250 50 600 600 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 220 500 500 600 700 700 1000 1000 1000 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 100 75 50 10 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 200 160 100 50 40 40 40 40 20 10 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 5 5 5 10 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 -0.26...-0.23 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.06...-0.03 -0.05...+0.02 -0.02...+0.02 -0.05...+0.05 0.03...0.06 0.03...0.07 0.03...0.07 0.03...0.08 0.03...0.09 0.03...0.1 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 Tested with pulses tp = 20 ms. www.yongyutai.com PAGE 2 BZV55C1V0 THRU BZV55C75 Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Valid provided that the electrodes are kept at ambient temperature. K/W 10 3 1000 o Tj=25 C 7 5 5 4 rthA rzj 3 2 3 2 0.5 2 100 10 7 4 0.2 5 5 4 4 0.1 3 3 0.05 2 2 0.02 10 0.01 10 3.6 4.7 5 5 4 tp 4 3 tp V= 3 PI T 2 10-5 10 -4 -3 10 10 -2 10 tp 5.6 1 -1 0.1 10 S 1 2 5 1 2 5 10 Dynamic resistance versus Zener current 100 pF 1000 o Tj=25 C o Tj=25 C 7 rzj 5 4 5 4 3 VR=1V 3 33 2 VR=2V 27 22 10 18 100 7 15 5 4 VR=1V 5 VR=2V 12 3 4 3 10 2 6.8/8.2 2 6.2 1 10 100mA 5 2 Iz Capacitance versus Zener voltage 2 5.1 2 T 1 Ctot 2.7 V=0 7 1 2345 10 2345 5 1 2 5 2 5 100mA 100V Vz at Iz=5 mA www.yongyutai.com 0.1 2 10 Iz PAGE 3 BZV55C1V0 THRU BZV55C75 Thermal differential resistance versus Zener voltage Dynamic resistance versus Zener current 10 Valid provided that electrodes are kept at ambient temperature 3 10 Tj=25o C 7 rzth=RthA.Vz. 5 Vz Tj 4 5 3 4 rzj 3 2 3 2 10 rzth 10 5 4 2 3 7 47+51 43 39 5 4 2 10 36 3 5 4 3 2 10 2 negative 2 0.1 2 3 1 4 5 2 3 10mA 4 5 positive 1 2345 1 Iz 2345 10 100V Vz at Iz=5 mA Temperature dependence of Zener voltage versus Zener voltage Dynamic resistance versus Zener voltage mV/K 25 100 7 5 rzj Vz Tj 4 3 20 5mA Iz=1mA 20mA 15 2 10 10 7 5 5 4 3 0 2 1 Tj=25o C Iz=5 mA 1 2 3 4 5 10 2 3 4 5 100V Vz at Iz=5 mA www.yongyutai.com -5 1 23 45 10 23 45 100V Vz at Iz=5 mA PAGE 4 BZV55C1V0 THRU BZV55C75 Temperature dependence of Zener voltage versus Zener voltage Change of Zener voltage versus junction temperature V mV/K 9 100 Iz=5 mA 8 80 Vz bei Iz=5mA 7 Vz Tj Vz 60 51V 6 43V 5 36V 4 40 3 2 1 20 0 Iz=5 mA -1 0 0 20 40 60 80 100V 0 20 40 60 o 80 100 120 140 C Vz at Iz=5 mA Tj Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage Change of Zener voltage versus junction temperature V 0.8 X) 25 Vz=35 V 0.7 V 1.6 15 1.4 10 0.6 Vz=rzth.Iz Iz=5 mA 1.2 Vz Vz 0.5 1 8 0.4 7 0.3 6.2 0.2 5.9 0.1 5.6 0 5.1 -0.1 X) at Iz=5 mA -0.2 0 20 40 60 1 3.6 4.7 o 80 100 120 140 C 0.8 0.6 0.4 0.2 0 -0.2 -0.4 1 2 3 4 5 10 2 3 4 5 100V Tj Vz at Iz=5 mA www.yongyutai.com PAGE 5