ASDM100R090NKG-T

ASDM100R090NKG 100V N-CHANNEL MOSFET Features Product Summary ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free VDS 100 V R DS(on),Typ@VGS=10V 8.4 mΩ 100 A ID Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial D G S TO-262 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Continuous Drain Current (Silicon Limited) Symbol ID Conditions TC=25℃ Value 100 TC=100℃ 38 100 Drain to Source Voltage VDS - Gate to Source Voltage VGS - Pulsed Drain Current IDM Avalanche Energy, Single Pulse Power Dissipation Unit A V V - ±20 400 A EAS L=0.1mH, TC=25℃ 80 mJ PD TC=25℃ 3.1 W -55 to150 ℃ Symbol Max Unit Thermal Resistance Junction-Case RθJC 0.5 ℃/W Thermal Resistance Junction-Ambient (steady state) RθJA 62 ℃/W Operating and Storage Temperature TJ, Tstg - Absolute Maximum Ratings Parameter NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM100R090NKG 100V N-CHANNEL MOSFET Electrical Characteristics at Tj=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Conditions Value min typ max 100 1 - - 1.8 2.5 VGS=0V, VDS=95V, Tj=25℃ - - 1 VGS=0V, VDS=95V, Tj=125℃ - - 100 VGS=±20V, VDS=0V - - ±100 VGS=4.5V, ID=10A - 8.4 10.8 Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µA Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source on Resistance RDS(on) Transconductance gfs VDS=5V, ID=14A - 70 10 15 - Gate Resistance RG VGS=0V, VDS Open, f=1MHz - 1.5 - - 1791 - - 145 - VGS=10V, ID=14A Unit V µA nA mΩ S Ω Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 8 - Total Gate Charge Qg(10V) - 49 - Total Gate Charge Qg(4.5V) - 21 - Gate to Source Charge Qgs - 8 - Gate to Drain (Miller) Charge Qgd - 7 - Turn on Delay Time td(on) - 10 - Rise time tr VDD=50V, ID=14A, VGS=10V, - 5 - Turn off Delay Time td(off) RG=10Ω, - 32 - Fall Time tf - 6 - - 0.9 1.2 V - 47 - ns - 226 - nC VGS=0V, VDS=50V, f=1MHz VDD=50V, ID=14A, VGS=10V pF nC ns Reverse Diode Characteristics Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr NOV 2018 Version1.0 VGS=0V, IF=14A VR=50V, IF=14A, dIF/dt=500A/µs 2/7 Ascend Semicondutor Co.,Ltd ASDM100R090NKG 100V N-CHANNEL MOSFET Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 120 6V 8V 110 ID=14A 5V 10V 100 4V 15 90 RDS(ON) (mΩ) 80 ID (A) 70 125°C 10 60 50 3.5V 40 25°C 5 30 20 10 Vgs=3V 0 0 0 1 2 3 2 4 4 6 8 10 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=14A VGS=4.5V Normalized On-Resistance 2 RDS(ON) (mΩ) 10 VGS=10V 5 VGS=10V 1.8 1.6 VGS=4.5V 1.4 1.2 1 0 0.8 0 5 10 15 20 0 25 50 ID (A) 75 100 125 150 175 Temperature (°C) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage 30 1.E+01 28 VDS=5V 26 1.E+00 24 22 20 125°C 1.E-01 18 14 125℃ 12 IS (A) ID(A) 16 25℃ 10 1.E-02 25°C 1.E-03 8 6 1.E-04 4 2 0 1.E-05 1 1.5 2 2.5 3 3.5 4 0.1 NOV 2018 Version1.0 0.3 0.5 0.7 0.9 VSD (V) VGS(V) 3/7 Ascend Semicondutor Co.,Ltd ASDM100R090NKG 100V N-CHANNEL MOSFET Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Typical Capacitance vs. Drain-to-Source Voltage 10000 10 VDS=50V ID=14A 8 Ciss Capacitance (pF) 1000 VGS (V) 6 4 Crss 100 10 Coss 2 0 1 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 VDS (V) Qg (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximun Drain Current vs. Case Temperature 20 18 100.0 16 14 ID (Amps) Current rating ID(A) 10µs 10.0 RDS(ON) 100µs 1.0 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 10s 0.0 0.01 12 10 8 6 4 2 0 0.1 1 10 100 0 25 VDS (V) 50 75 100 125 150 TAmbient(℃) Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient 0.03 0.05 0.1 0.3 10 Duty=Ton/T Peak TJ=TC+PDM.ZθJA.RθJA RθJA=75℃/W 1 ZθJA Normalized Transient Thermal Resistance Duty=0.5 0.3 0.1 0.01 0.1 0.05 0.03 0.01 single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) NOV 2018 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM100R090NKG 100V N-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100R090NKG-T 100R090N TO-262 Tube 50/Tubel MARKING PACKAGE 100R090N TO-262 NOV 2018 Version1.0 5/7 Ascend Semicondutor Co.,Ltd ASDM100R090NKG 100V N-CHANNEL MOSFET 23.40+0.1 - 10.28+0.2 - TO-262 NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM100R090NKG 100V N-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version1.0 7/7 Ascend Semicondutor Co.,Ltd