ASDM100R090NQ-R

ASDM100R090NQ 100V N-Channel MOSFET Features Product Summary ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free V DS 100 R DS(on),Typ@ VGS=10 V 7.3 V mΩ 55 ID A Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial D G S DFN5×6-8 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Continuous Drain Current (Silicon Limited) Conditions Symbol ID Value TC=25℃ 55 TC=100℃ 38 100 Unit A Drain to Source Voltage VDS - Gate to Source Voltage VGS - Pulsed Drain Current IDM - Avalanche Energy, Single Pulse EAS L=0.1mH, TC=25℃ 80 mJ Power Dissipation PD TC=25℃ 3.1 W -55 to150 ℃ Symbol Max Unit RθJL 23 ℃/W Operating and Storage Temperature TJ, Tstg V +20/-12 80 - V A Absolute Maximum Ratings Parameter Thermal Resistance Junction-Lead Thermal Resistance Junction-Ambient (t≤10s) Thermal Resistance Junction-Ambient (steady state) NOV 2020 Version2.0 1/8 RθJA 40 ℃/W 75 ℃/W www.ascendsemi.com 0755-86970486 ASDM100R090NQ 100V N-Channel MOSFET Electrical Characteristics at Tj=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Value Conditions min typ max 100 1 - - 1.8 2.5 VGS=0V, VDS=95V, Tj=25℃ - - 1 VGS=0V, VDS=95V, Tj=125℃ - - 100 VGS=±20V, VDS=0V - - ±100 VGS=10V, ID=14A - 7.3 9 VGS=4.5V, ID=10A - 11 Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µA Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source on Resistance RDS(on) Transconductance gfs VDS=5V, ID=14A - 70 12 - Gate Resistance RG VGS=0V, VDS Open, f=1MHz - 1.5 - - 3350 - - 270 - Unit V µA nA mΩ S Ω Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg(10V) - 49 - Total Gate Charge Qg(4.5V) - 21 - Gate to Source Charge Qgs - 8 - Gate to Drain (Miller) Charge Qgd - 7 - Turn on Delay Time td(on) - 10 - Rise time tr VDD=50V, ID=14A, VGS=10V, - 5 - Turn off Delay Time td(off) RG=10Ω, - 32 - Fall Time tf - 6 - - 0.9 1.2 V - 47 - ns - 226 - nC VGS=0V, VDS=50V, f=1MHz VDD=50V, ID=14A, VGS=10V pF nC ns Reverse Diode Characteristics Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr NOV 2020 Version2.0 2/8 VGS=0V, IF=14A VR=50V, IF=14A, dIF/dt=500A/µs www.ascendsemi.com 0755-86970486 ASDM100R090NQ 100V N-Channel MOSFET Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 120 6V 8V 110 ID=14A 5V 100 10V 4V 15 90 80 RDS(ON) (mΩ) 125°C ID (A) 70 10 60 50 3.5V 40 25°C 5 30 20 10 Vgs=3V 0 0 0 1 2 3 2 4 4 6 8 10 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=14A Normalized On-Resistance 2 10 RDS(ON) (mΩ) VGS=4.5V VGS=10V 5 VGS=10V 1.8 1.6 VGS=4.5V 1.4 1.2 1 0 0.8 0 5 10 15 20 0 25 50 ID (A) 75 100 125 150 175 Temperature (°C) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage 30 1.E+01 28 VDS=5V 26 1.E+00 24 22 20 125℃ 18 1.E-01 25℃ 125°C 25°C IS (A) ID(A) 16 14 12 10 1.E-02 1.E-03 8 6 1.E-04 4 2 0 1.E-05 1 1.5 2 2.5 VGS(V) NOV 2020 Version2.0 3/8 3 3.5 4 0.1 0.3 0.5 0.7 0.9 VSD (V) www.ascendsemi.com 0755-86970486 ASDM100R090NQ 100V N-Channel MOSFET Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Typical Capacitance vs. Drain-to-Source Voltage 10000 10 VDS=50V ID=14A Ciss 8 Capacitance (pF) 1000 VGS (V) 6 4 Coss 100 Crss 10 2 0 1 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 VDS (V) Qg (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximun Drain Current vs. Case Temperature 20 18 100.0 16 14 ID (Amps) RDS(ON) 100µs 1.0 1ms 0.1 10ms DC TJ(Max)=150°C TC=25°C Current rating ID(A) 10µs 10.0 10s 0.0 0.01 12 10 8 6 4 2 0 0.1 1 10 100 0 25 VDS (V) 50 75 100 125 150 TAmbient(℃) Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient 0.03 0.05 0.1 0.3 10 Duty=Ton/T Peak TJ=TC+PDM.ZθJA.RθJA RθJA=75℃/W ZθJA Normalized Transient Thermal Resistance 1 Duty=0.5 0.3 0.1 0.1 0.05 0.03 0.01 0.01 0.001 0.00001 single pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) NOV 2020 Version2.0 4/8 www.ascendsemi.com 0755-86970486 ASDM100R090NQ 100V N-Channel MOSFET Inductive switching Test Gate Charge Test Uclamped Inductive Switching (UIS) Test Diode Recovery Test NOV 2020 Version2.0 5/8 www.ascendsemi.com 0755-86970486 ASDM100R090NQ 100V N-Channel MOSFET Ordering and Marking Information Ordering Device No. ASDM100R090NQ-R PACKAGE Package Packing Quantity 100R090N DFN5*6-8 Tape&Reel 4000/Reel MARKING DFN5*6-8 NOV 2020 Version2.0 Marking 100R090N 6/8 www.ascendsemi.com 0755-86970486 ASDM100R090NQ 100V N-Channel MOSFET DFN5*6-8 PACKAGE IN FORMATION Symbol A A1 A2 b C D D1 e E E1 E2 L L1 L2 L3 H Ө NOV 2020 Version2.0 7/8 Dimensions in Millimeters Min Max 0.85 1.00 0.01 0.05 0.69 0.75 0.40 0.45 0.20 0.30 4.80 4.95 3.91 4.06 Dimensions in Inches Min Max 0.033 0.039 0.000 0.002 0.027 0.030 0.016 0.018 0.008 0.012 0.189 0.195 0.154 0.160 1.27 TYP 5.65 3.46 0.80 0.15 0.08 0.58 0.45 6.15 8° 5.80 3.50 0.95 0.3 0.15 0.73 0.60 6.28 12° 0.222 0.136 0.031 0.006 0.003 0.023 0.018 0.242 8° 0.05 TYP 0.228 0.138 0.037 0.012 0.006 0.029 0.024 0.247 12° www.ascendsemi.com 0755-86970486 ASDM100R090NQ 100V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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