ASDM4606S-R

ASDM4606S 30V N&P-Channel MOSFET Product Summary General Features ● N-Channel ● High power and current handing capability 30 V mΩ mΩ 8 A VDS RDS(on),Typ VGS=-10V -30 43 V mΩ RDS(on),Typ VGS=-4.5V ID 56 mΩ -6 A VDS RDS(on),Typ VGS=10V RDS(on),Typ VGS=4.5V ● Lead free product is acquired ● Surface mount package 30 22 ID Application ● P-Channel ● PWM applications ● Load switch ● Power management Top view ASCEND SOP-8 N-channel P-channel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current ID 8 -6 A Pulsed Drain Current (Note 1) IDM 25 -20 A Maximum Power Dissipation PD 2.5 2.5 W TJ,TSTG -55 To 150 -55 To 150 ℃ N-Ch 89 P-Ch 90 Operating Junction and Storage Temperature Range Unit Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) NOV 2021 Version1.0 1/12 RθJA www.ascendsemi.com ℃/W 0755-86970486 ASDM4606S 30V N&P-Channel MOSFET N-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS - - 1 μA Gate-Body Leakage Current IGSS VDS=24V,VGS=0V VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.5 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A - 22 29 mΩ Off Characteristics On Characteristics (Note 3) Forward Transconductance VGS=4.5V, ID=4A - 30 43 mΩ gFS VDS=5V,ID=5A - 15 - S C lss Coss VDS=15V,VGS=0V, - 480 - PF - 80 - PF - 60 - PF - 4.5 - nS Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=15V, RL=3Ω - 2.5 - nS td(off) VGS=10V,RGEN=3Ω - 14.5 - nS - 3.5 - nS - 5.2 - nC - 0.85 - nC - 1.3 - nC - - 1.3 V - - 4 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V,ID=5A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS NOV 2021 Version1.0 2/12 VGS=0V,IS=3A www.ascendsemi.com 0755-86970486 ASDM4606S 30V N&P-Channel MOSFET P-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μ A -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.5 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-5A - 43 52 mΩ VGS=-4.5V, ID=-4A - 56 77 mΩ VDS=-5V,ID=-4.1A 5.5 - - S - 648 - PF - 108 - PF - 68 - PF - 9 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V,RL=3.6Ω - 5 - nS td(off) VGS=-10V,RGEN=3Ω - 28 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 13.5 - nS Total Gate Charge Qg - 14 - nC Gate-Source Charge Qgs - 3.1 - nC Gate-Drain Charge Qgd - 3. - nC - - -1.3 VDS=-15V,ID=-4A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2021 Version1.0 3/12 www.ascendsemi.com 0755-86970486 ASDM4606S 30V N&P-Channel MOSFET N- Channel Typical Electrical and Thermal Characteristics (Curves) ton Vdd Vin Vgs Rgen D tr td(on) Rl toff Vout 90% VOUT G tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A) ID- Drain Current (A) Figure 1:Switching Test Circuit Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 4 Transfer Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) Figure 3 Output Characteristics ID- Drain Current (A) Figure 5 Drain-Source On-Resistance NOV 2021 Version1.0 4/12 TJ-Junction Temperature(℃) Figure 6 Drain-Source On-Resistance www.ascendsemi.com 0755-86970486 ASDM4606S Rdson On-Resistance(mΩ) C Capacitance (pF) 30V N&P-Channel MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure7 Rdson vs Vgs Vds Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 10 Source- Drain Diode Forward ID- Drain Current (A) C Capacitance (pF) Figure 9 Gate Charge Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds NOV 2021 Version1.0 5/12 Vds Drain-Source Voltage (V) Figure 12 Safe Operation Area www.ascendsemi.com 0755-86970486 ASDM4606S r(t),Normalized Effective Transient Thermal Impedance 30V N&P-Channel MOSFET Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 6/12 www.ascendsemi.com 0755-86970486 ASDM4606S 30V N&P-Channel MOSFET P-Channel Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS NOV 2021 Version1.0 7/12 ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.ascendsemi.com 0755-86970486 ASDM4606S ID- Drain Current (A) Normalized On-Resistance 30V N&P-Channel MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge NOV 2021 Version1.0 8/12 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM4606S ID- Drain Current (A) 30V N&P-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 9/12 www.ascendsemi.com 0755-86970486 ASDM4606S 30V N&P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM4606S 4606 Packing Quantity SOP-8 Tape&Reel 4000/Reel MARKING PACKAGE 4606 SOP-8 NOV 2021 Version1.0 Package 10/12 Lot Number www.ascendsemi.com 0755-86970486 ASDM4606S 30V N&P-Channel MOSFET SOP-8 PACKAGE IN FORMATION NOV 2021 Version1.0 11/12 www.ascendsemi.com 0755-86970486 ASDM4606S 30V N&P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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