ASDM4976S-R

ASDM4976S 60V N&P-Channel MOSFET Product Summary Features ● High power and current handing capability ● N-Channel ● Lead free product is acquired VDS RDS(on).TypVGS=10V RDS(on).TypVGS=4.5V ● Surface mount package Application 32 V mΩ mΩ 6 A VDS RDS(on),TypVGS=-10V -60 RDS(on),TypVGS=-4.5V ID 82 -6 V mΩ mΩ 60 25 ID ● PWM applications ● P-Channel ● Load switch ● Power management 64 A D1 D1 D2 D2 S1 G1 S2 G2 SOP-8 N-channel top view P-channel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current ID 6 -6 A Pulsed Drain Current (Note 1) IDM 24 -24 A 2 1.2 W Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) NOV 2021 Version1.0 1/12 RθJA N-Ch 89 P-Ch 90 www.ascendsemi.com ℃/W 0755-86970486 ASDM4976S 60V N&P-Channel MOSFET N-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min BVDSS VGS=0V ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - ±100 nA 1.6 2.5 V Off Characteristics Drain-Source Breakdown Voltage On Characteristics (Note 3) Forward Transconductance gFS 1 VGS=10V, ID=4A - 25 30 mΩ VGS=4.5V, ID=2A - 32 40 mΩ VDS=10V, ID=4.5A - 20 - S - 1040 - PF - 170 - PF - 132 - PF - 4.5 - nS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=15V, RL=3Ω - 2.5 - nS td(off) VGS=10V,RGEN=3Ω - 14.5 - nS - 3.5 - nS - 5.2 - nC - 0.85 - nC - 1.3 - nC - - 1.3 V - - 6 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=4.5 A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS NOV 2021 Version1.0 2/12 VGS=0V,IS=3A www.ascendsemi.com 0755-86970486 ASDM4976S 60V N&P-Channel MOSFET P-CH Electrical Characteristics (TA=25℃unless otherwise noted)  Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 Zero Gate Voltage Drain Current IDSS VDS=-48V , VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - -1 μA - - ±100 nA VDS=VGS,ID=-250μA -1 -1.8 -2.5 V VGS=-10V, ID=-3.5A - 64 70 mΩ VGS=-4.5V, ID=-3.1A - 82 90 mΩ VGS=-5V, ID=-3.5A 12 - - S - 988 - PF - 168 - PF - 102 - PF - 9 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) InputCapacitance Clss OutputCapacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V,RL=3.6Ω - 5 - nS td(off) VGS=-10V,RGEN=3Ω - 28 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 13.5 - nS Total Gate Charge Qg - 14 - nC Gate-Source Charge Qgs - 3.1 - nC Gate-Drain Charge Qgd - 3. - nC - - -1.3 VDS=-30V,ID=-3.5A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD V= GS=0V,IS -1A V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2021 Version1.0 3/12 www.ascendsemi.com 0755-86970486 ASDM4976S 60V N&P-Channel MOSFET N-Channel Typical Electrical and Thermal Characteristics ton Vdd Vin Vgs Rgen D tr td(on) Rl Vout tf td(off) 90% VOUT G S 90% INVERTED 10% 10% 90% VIN 50% 10% 50% PULSE WIDTH Figure 2:Switching Waveforms Figure 1:Switching Test Circuit ID- Drain Current (A) ID- Drain Current (A) toff Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 4 Transfer Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) Figure 3 Output Characteristics ID- Drain Current (A) Figure 5 Drain-Source On-Resistance NOV 2021 Version1.0 4/12 TJ-Junction Temperature(℃) Figure 6 Drain-Source On-Resistance www.ascendsemi.com 0755-86970486 ASDM4976S Rdson On-Resistance(mΩ) C Capacitance (pF) 60V N&P-Channel MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure7 Rdson vs Vgs Vds Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 10 Source- Drain Diode Forward ID- Drain Current (A) C Capacitance (pF) Figure 9 Gate Charge Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds NOV 2021 Version1.0 5/12 Vds Drain-Source Voltage (V) Figure 12 Safe Operation Area www.ascendsemi.com 0755-86970486 ASDM4976S r(t),Normalized Effective Transient Thermal Impedance 60V N&P-Channel MOSFET Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 6/12 www.ascendsemi.com 0755-86970486 ASDM4976S 60V N&P-Channel MOSFET P-Channel Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 10% 50% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS NOV 2021 Version1.0 7/12 ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.ascendsemi.com 0755-86970486 ASDM4976S ID- Drain Current (A) Normalized On-Resistance 60V N&P-Channel MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge NOV 2021 Version1.0 8/12 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM4976S ID- Drain Current (A) 60V N&P-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance NOV 2021 Version1.0 9/12 www.ascendsemi.com 0755-86970486 ASDM4976S 60V N&P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM4976S-R 4976 SOP-8 Quantity Tape&Reel 4000/Reel MARKING PACKAGE SOP-8 NOV 2021 Version1.0 Packing 4976 10/12 www.ascendsemi.com 0755-86970486 ASDM4976S 60V N&P-Channel MOSFET SOP-8 PACKAGE IN FORMATION NOV 2021 Version1.0 11/12 www.ascendsemi.com 0755-86970486 ASDM4976S 60V N&P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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