ASDM4976Q
60V N & P-Channel MOSFET
Product Summary
Features
● High power and current handing capability
● N-Channel
● Lead free product is acquired
VDS
RDS(on).TypVGS=10V
RDS(on).TypVGS=4.5V
● Surface mount package
Application
32
V
mΩ
mΩ
9
A
VDS
RDS(on),TypVGS=-10V
-60
RDS(on),TypVGS=-4.5V
ID
79
-9
V
mΩ
mΩ
60
27
ID
● PWM applications
● P-Channel
● Load switch
● Power management
N-channel
DFN5*6-8
63
A
P-channel
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
60
-60
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current
ID
9
-9
A
PulsedDrain Current (Note 1)
IDM
36
-36
A
Maximum Power Dissipation
PD
2
1.2
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
NOV 2019 Version1.0
RθJA
1/12
N-Ch
89
P-Ch
90
℃/W
Ascend Semicondutor Co.,Ltd
ASDM4976Q
60V N & P-Channel MOSFET
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
BVDSS
VGS=0V ID=250μA
60
Zero Gate Voltage Drain Current
IDSS
VDS=48V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
Typ
Max
Unit
-
V
-
1
μA
-
±100
nA
1.8
2.5
V
Off Characteristics
Drain-Source Breakdown Voltage
On Characteristics (Note 3)
Forward Transconductance
gFS
1
VGS=10V, ID=4A
-
27
30
mΩ
VGS=4.5V, ID=2A
-
32
40
mΩ
VDS=10V, ID=4.5A
-
20
-
S
-
1031
-
PF
-
169
-
PF
-
131
-
PF
-
4.5
-
nS
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=15V, RL=3Ω
-
2.5
-
nS
td(off)
VGS=10V,RGEN=3Ω
-
14.5
-
nS
-
3.5
-
nS
-
5.2
-
nC
-
0.85
-
nC
-
1.3
-
nC
-
-
1.3
V
-
-
9
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=4.5
A, VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
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VGS=0V,IS=3A
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
60V N & P-Channel MOSFET
P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-60
Zero Gate Voltage Drain Current
IDSS
VDS=-48V , VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Typ
Max
Unit
-
V
-
-1
μA
-
-
±100
nA
VDS=VGS,ID=-250μA
-1
-1.8
-2.5
V
VGS=-10V, ID=-3.5A
-
63
70
mΩ
VGS=-4.5V, ID=-3.1A
-
79
90
mΩ
VGS=-5V, ID=-3.5A
12
-
-
S
-
946
-
PF
-
161
-
PF
-
98
-
PF
-
9
-
nS
Off Characteristics
On Characteristics (Note 3)
Forward Transconductance
gFS
Dynamic Characteristics (Note4)
InputCapacitance
Clss
OutputCapacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-15V,RL=3.6Ω
-
5
-
nS
td(off)
VGS=-10V,RGEN=3Ω
-
28
-
nS
Turn-Off Delay Time
Turn-Off Fall Time
tf
-
13.5
-
nS
Total Gate Charge
Qg
-
14
-
nC
Gate-Source Charge
Qgs
-
3.1
-
nC
Gate-Drain Charge
Qgd
-
3.
-
nC
-
-
-1.3
VDS=-30V,ID=-3.5A,VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
V=
GS=0V,IS -1A
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
60V N & P-Channel MOSFET
N-Channel Typical Electrical and Thermal Characteristics
ton
Vdd
Vin
Vgs
Rgen
D
tr
td(on)
Rl
Vout
toff
90%
VOUT
G
S
tf
td(off)
90%
INVERTED
10%
10%
90%
VIN
50%
10%
50%
PULSE WIDTH
Figure 2:Switching Waveforms
ID- Drain Current (A)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 4 Transfer Characteristics
Normalized On-Resistance
Rdson On-Resistance(mΩ)
Figure 3 Output Characteristics
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Figure 5 Drain-Source On-Resistance
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
Rdson On-Resistance(mΩ)
C Capacitance (pF)
60V N & P-Channel MOSFET
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure7 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Qg Gate Charge (nC)
Figure 10 Source- Drain Diode Forward
ID- Drain Current (A)
C Capacitance (pF)
Figure 9 Gate Charge
Vds Drain-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
NOV 2019 Version1.0
Figure 12
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Safe Operation Area
Ascend Semicondutor Co.,Ltd
ASDM4976Q
r(t),Normalized Effective
Transient Thermal Impedance
60V N & P-Channel MOSFET
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
60V N & P-Channel MOSFET
P-Channel Typical Electrical and Thermal Characteristics
ton
tr
td(on)
td(off)
90%
VOUT
toff
tf
90%
INVERTED
10%
10%
90%
VIN
50%
10%
50%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 3 Power Dissipation
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 6 Drain-Source On-Resistance
Figure 5 Output CHARACTERISTICS
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
ID- Drain Current (A)
Normalized On-Resistance
60V N & P-Channel MOSFET
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
NOV 2019 Version1.0
Figure 12 Source- Drain Diode Forward
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
ID- Drain Current (A)
60V N & P-Channel MOSFET
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
60V N & P-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
Marking
ASDM4976Q-R
4976
Package
DFN5*6-8
Quantity
Tape&Reel
4000/Reel
MARKING
PACKAGE
DFN5*6-8
NOV 2019 Version1.0
Packing
4976
10/12
Ascend Semicondutor Co.,Ltd
ASDM4976Q
60V N & P-Channel MOSFET
DFN5x6_P, 8 Leads
NOV 2019 Version1.0
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Ascend Semicondutor Co.,Ltd
ASDM4976Q
60V N & P-Channel MOSFET
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