ASDM4407BS-R

ASDM4407BS -30V P-Channel MOSFET General Description Product Summary ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching ● >± V DS R DS(on),TYP Applications I -30 V 8.8 mΩ -14 A @ VGS=10 V D ● Battery protection ● Load switch ● Power management top view D ASCEND G S SOP-8 Absolute Maximum Ratings TA = 25ºC, unless otherwise noted Parameter Drain-Source voltage(VGS=0V) Continuous Drain Current2) Symbol Values Unit VDS -30 V TA = 25ºC -14 ID TA = 100ºC A -8.8 Pulsed Drain Current3) ID,pulse -56 A Gate-Source Voltage VGSS ±25V V Single Pulse Avalanche Energy EAS 135 mJ Power Dissipation PD 2.9 W Continuous Diode Forward Current IS -4 A VSD -1.2 V TJ, Tstg -55~+150 ºC Diode Forward Voltage Operating Junction and Storage Temperature Range JAN 2019 Version1.1 1/7 www.ascendsemi.com 0755-86970486 ASDM4407BS -30V P-Channel MOSFET Electrical Characteristics TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = -250µA -30 -- -- VDS = -30V VGS = 0V, TJ = 25ºC -- -- -1 VDS = -24V, VGS = 0V, TJ = 125ºC -- -- -100 IGSS VGS = ±25V -- -- ±100 nA VGS(th) VDS = VGS, ID = -250µA -1.2 -1.7 -2.3 V VGS = -20V, ID = -14A -- 7.9 10.5 mΩ VGS = -10V, ID = -14A -- 8.8 11.5 mΩ VGS = -6V, ID = -10A -- 10 13 mΩ VGS = -4.5V, ID = -10A -- 11.8 16 mΩ f = 1.0MHz open drain -- 3.7 -- Ω -- 3351 -- -- 327.6 -- Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current μA IDSS Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On-State-Resistance RDS(on) Gate Resistance RG V Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS = -15V f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 285 -- Total Gate Charge Qg -- 61.9 -- Gate-Source Charge Qgs -- 9.85 -- Gate-Drain Charge Qgd -- 11.5 -- VPlateau -- 2.9 -- Turn-on Delay Time td(on) -- 12 -- Turn-on Rise Time tr -- 7 -- Turn-off Delay Time td(off) -- 53 -- -- 16.5 -- -- -0.7 -1.2 V -- 18 -- ns -- 32 -- μC Gate Plateau Voltage Turn-off Fall Time VDS = -15V , ID = -14A VGS = -10V VDS = -15V , VGS = -10V RG = 3Ω tf pF nC V ns Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD Reverse Recovery Time TJ = 25ºC, ISD = -14A, VGS = 0V trr IF = -14A，diF/dt = 500A/μs Reverse Recovery Charge JAN 2019 Version1.1 Qrr 2/7 www.ascendsemi.com 0755-86970486 ASDM4407BS -30V P-Channel MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge RDS(on),Drain-to-Source On Resistance[mΩ] 18 PULSED TEST Tj = 25℃ 16 14 VGS = -4.5V 12 VGS = -10V 10 8 6 0 5 10 15 20 Figure5. Drain-Source on Resistance JAN 2019 Version1.1 3/7 25 Figure6. Drain-Source on Resistance www.ascendsemi.com 0755-86970486 ASDM4407BS -30V P-Channel MOSFET Figure7. Safe Operation Area JAN 2019 Version1.1 4/7 Figure8. Switching wave www.ascendsemi.com 0755-86970486 ASDM4407BS -30V P-Channel MOSFET Ordering and Marking Information Ordering Device No. ASDM4407BS-R Package Packing Quantity 4407B SOP-8 Tape&Reel 4000/Reel MARKING PACKAGE SOP-8 JAN 2019 Version1.1 Marking 4407B 5/7 www.ascendsemi.com 0755-86970486 ASDM4407BS -30V P-Channel MOSFET SOP-8 Package information JAN 2019 Version1.1 6/7 www.ascendsemi.com 0755-86970486 ASDM4407BS -30V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com JAN 2019 Version1.1 7/7 www.ascendsemi.com 0755-86970486