ASDM60DN05S-R

ASDM60DN05S 60V Dual N-CHANNEL MOSFET Features Product Summary • Dual N-Channel,5V Logic Level Control • Enhancement mode V • Fast Switching • High Effective 60 V RDS(on),Typ@ VGS =10 V 28 mΩ ID 5 A DS Application • Power Management in Inverter System • Synchronous Rectification Dual N-Channel MOSFET SOP8 Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current V TA=25°C 5.0 A TA=25°C 20 A TA=25°C 5.0 TA=70°C 7.0 TA=25°C 3 TA=70°C 1.6 Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation IDP RJC RJA ③ A W Thermal Resistance-Junction to Case 36 °C/W Thermal Resistance-Junction to Ambient 85 °C/W - mJ Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM60DN05S 60V Dual N-CHANNEL MOSFET Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 1 TJ=125°C Gate Threshold Voltage ⑤ V VDS=60V, VGS=0V VGS(th) RDS(ON) 60 µA 30 1 1.6 2.5 V ±100 nA VGS=10V, IDS=8.0A 28 30 mΩ VGS=4.5V, IDS=6A 31 36 mΩ 1 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=10A, VGS=0V ISD=10A, dlSD/dt=100A/µs 25 ns 14 nC 1 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 53 VDD=30V,IDS=8.0A, VGEN=10V,RG=3Ω 45 24 ns 17 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 120 10 Turn-off Fall Time Gate Charge Characteristics 1040 VDS=48V, VGS=10V, IDS=8.0A 25 4.5 nC 6.5 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM60DN05S 60V Dual N-CHANNEL MOSFET Typical Characteristics Power Dissipation Drain Current 12 10 ID - Drain Current (A) PD - Power (W) 3 2 1 8 6 4 2 VGS=10V 0 0 0 25 50 75 100 125 25 150 50 10µs 100µs 1ms 10ms DC 1 0.1 TA=25°C 0.1 1 10 RDS(ON) - On - Resistance (mΩ) Safe Operation Area RDS(ON) limited ID - Drain Current (A) 10 100 125 150 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 100 75 Drain Current 60 IDS=10A 50 40 30 20 10 0 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse RθJA=50°C/W 0.1 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) NOV 2018 Version1.0 3/7 Ascend Semicondutor Co.,Ltd ASDM60DN05S 60V Dual N-CHANNEL MOSFET Typical Characteristics Output Characteristics 6V ID - Drain Current (A) 10V 4.5V 40 4V 30 3.5V 20 10 3V 0 0 1 3 Drain-Source On Resistance 60 RDS(ON) - On Resistance (mΩ) 50 4 50 40 VGS=4.5V 30 VGS=10V 20 10 0 0 10 20 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=20mΩ TJ=150°C 1 TJ=25°C 0.1 0.01 0.0 -50 -25 0 25 50 75 100 125 0.2 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz Ciss 900 600 300 Coss Crss 0 10 1 100 1 1.2 1.4 10 VDS=24V IDS=20A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) NOV 2018 Version1.0 0.8 Gate Charge 1800 1200 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 1500 50 Source-Drain Diode Forward 10 VGS=10V IDS=8.0A 0.5 40 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 30 10 20 30 40 QG - Gate Charge (nC) 4/7 Ascend Semicondutor Co.,Ltd ASDM60DN05S 60V Dual N-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM60DN05S-R 60DN05 SOP-8 Quantity Tape&Reel 4000/Reel MARKING PACKAGE SOP-8 NOV 2018 Version1.0 Packing 60DN05 5/7 Ascend Semicondutor Co.,Ltd ASDM60DN05S 60V Dual N-CHANNEL MOSFET SOP-8 PACKAGE IN FORMATION NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM60DN05S 60V Dual N-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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