ASDM40C23JQ-R

ASDM40C23JQ 40V N-Ch & P-Ch MOSFET Features Product Summary •100% EAS Guaranteed •Green Device Available ● N-Channel •Super Low Gate Charge •Excellent CdV/dt effect decline •Advanced high cell density Trench technology Application VDS RDS(on).TypVGS=10V RDS(on).TypVGS=4.5V 40 13 16 V mΩ mΩ ID 23 A VDS RDS(on),TypVGS=-10V -40 RDS(on),TypVGS=-4.5V ID 39 -20 V mΩ mΩ ● P-Channel • Battery protection • Load switch •Uninterruptible power supply TO252-4 28 A N-Channel&P-Channel Absolute Maximum Ratings (TC=25℃unless otherwise noted) Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±20 ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 23 -20 A ID@TC=100℃ 10V1 18 -16 A 92 -80 A 28 66 mJ IDM EAS Continuous Drain Current, VGS @ Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS Avalanche Current 17.8 -27.2 A PD@TC=25℃ Total Power Dissipation4 25 31.3 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ --- 62 ℃/W --- 5 ℃/W RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 NOV 2021 Version2.0 1/10 1 Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET N-Channel Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.032 --- V/℃ VGS=10V , ID=15A --- 13 18 VGS=4.5V , ID=10A --- 16 21 VGS=VDS , ID =250uA 1.0 --- 2.5 V --- -4.8 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 --- --- --- --- 5 ±100 mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VDS=32V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V gfs Forward Transconductance VDS=5V , ID=15A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 --- Ω Qg Total Gate Charge (4.5V) --- 10 --- Qgs Gate-Source Charge --- 2.55 --- Qgd Gate-Drain Charge --- 4.8 --- Td(on) Turn-On Delay Time --- 2.8 --- --- 12.8 --- --- 21.2 --- --- 6.4 --- --- 845 --- --- 89 --- --- 63 --- --- --- 23 A --- --- 92 A --- --- 1.2 V --- 10 --- nS --- 3.1 --- nC Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=32V , VGS=4.5V , ID=15A VDD=20V , VGS=10V , RG=3.3 ID=15A VDS=15V , VGS=0V , f=1MHz Current1,5 IS Continuous Source ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=15A , TJ=25℃ dI/dt=100A/µs , uA nA nC ns pF Note : 1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3 .The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. NOV 2021 Version2.0 2/10 Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET P-Channel Electrical Characteristics (TC=25℃unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-10V , ID=-8A --- 28 37 VGS=-4.5V , ID=-4A --- 39 51 -1.0 --- -2.5 mΩ V --- 4.32 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID = -250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-8A --- 12.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 16 Qg Total Gate Charge (-4.5V) --- 9 --- Qgs Gate-Source Charge --- 2.54 --- Qgd Gate-Drain Charge --- 3.1 --- Td(on) Turn-On Delay Time --- 19.2 --- --- 12.8 --- --- 48.6 --- --- 4.6 --- --- 1009 --- --- 108 --- --- 80 --- Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS ISM VSD VDS=-20V , VGS=-4.5V , ID=-12A VDD=-15V RG=3.3 , , VGS=-10V , ID=-1A VDS=-15V , VGS=0V , f=1MHz Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ uA nC ns pF --- --- -20 A --- --- -80 A --- --- -1 V Note : 1.The data tested by surface mo unted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A 4.The power dissipation is limited by 150℃ junction temperature 5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. NOV 2021 Version2.0 3/10 Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET N-Channel Typical Characteristics 12 8 ID=12A VGS=10V 10 7 VGS=5V RDSON (mΩ) ID Drain Current (A) VGS=7V 8 VGS=4.5V 6 6 VGS=3V 4 5 2 4 0 0.1 0.2 0.3 0.4 VDS , Drain-to-Source Voltage (V) 0.5 2 Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 10 12 ID= 1 2 A VGS Gate to Source Voltage (V) IS Source Current(A) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 8 6 4 2 0 0 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) 0 1 Fig.3 Forward Characteristics Of Reverse 30 45 60 QG , T o t a l G a t e C h a r g e ( n C ) Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 15 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 -50 150 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) vs. TJ NOV 2021 Version2.0 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 4/10 Ascend Semicondutor Co.,Ltd 150 ASDM40C23JQ 40V N-Ch & P-Ch MOSFET 10000 1000.00 F=1.0MHz 10us Capacitance (pF) 100.00 100us 1000 10.00 ID (A) Ciss 10ms 100ms 1.00 DC 100 Coss 0.10 TC=25℃ Single Pulse Crss 0.01 1 5 9 13 17 VDS , Drain to Source Voltage(V) 21 0.1 25 1 10 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform NOV 2021 Version2.0 Fig.11 Unclamped Inductive Switching Wave 5/10 Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET P-Channel Typical Characteristics 60 12 ID= - 1 2 A VGS=-10V 10 55 RD S O N( m Ω ) -ID Drain Current (A) VGS=-7V VGS=-5V 8 6 50 45 VGS=-4.5V 40 4 VGS=-3V 35 2 0 30 0 0.5 1 1.5 -VDS Drain-to-Source Voltage (V) 2 2 Fig.1 Typical Output Characteristics 4 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Normalized On Resistance Fig.3 Forward Characteristics of Reverse 12 18 Fig.4 Gate-Charge Characteristics 2.0 1.5 Normalized -VGS(th) 6 QG , T o t a l G a t e C h a r g e ( n C ) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) 150 Fig.5 Normalized VGS(th) v.s TJ NOV 2021 Version2.0 0.5 -50 0 50 100 Fig.6 Normalized RDSON v.s TJ 6/10 150 TJ , J u n c t i o n T e m p℃) e ra ture ( Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET 10000 100.00 Capacitance (pF) F=1.0MHz 1000 100us 10.00 Ciss -ID (A) 1ms 10ms 100ms DC 1.00 Coss 100 0.10 Crss Tc=25o C Single Pulse 10 0.01 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 0.1 Fig.7 Capacitance 1 -VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Package Mechanical Data Fig.10 Switching Time Waveform NOV 2021 Version2.0 Fig.11 Unclamped Inductive Waveform 7/10 Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM40C23JQ-R 40C23 Package TO-252-4 Quantity Tape&Reel 2500/Reel MARKING PACKAGE TO-252-4 NOV 2021 Version2.0 Packing 40C23 8/10 Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET TO-252-4 PACKAGE OUTLINE DRAWING A B D A1 H C1 L L2 L3 A2 N L1 F1 F E Symbol A A1 A2 B C C1 D E F1 F H L L1 L2 L3 N NOV 2021 Version2.0 C1 E Min 2.20 0.91 0.05 6.45 0.45 0.45 5.12 Typ 2.30 1.01 0.15 6.60 0.50 0.50 5.32 1.27 TYP 0.60 0.50 4.90 10.00 2.8 6.10 5.20 0.65 0.45 0.40 4.70 9.70 2.6 5.95 5.00 0.45 9/10 Max 2.40 1.11 0.25 6.75 0.58 0.58 5.52 0.75 0.60 5.10 10.20 3.0 6.25 5.40` 0.85 Ascend Semicondutor Co.,Ltd ASDM40C23JQ 40V N-Ch & P-Ch MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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