ASDM40R065NE-R

ASDM40R065NE 40V N-Channel MOSFET Product Summary Features  Enhancement mode V DS 40 V  Fast Switching and High efficiency R DS(on),Typ@ VGS=10 V 6.9 mΩ ID 40 A  100% Avalanche test PDFN3.3*3.3-8 Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 40 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TC =25°C 40 A ID Continuous drain current @VGS=10V TC =25°C 40 A TC =100C 34 A IDM Pulse drain current tested ① TC =25°C 160 A EAS Avalanche energy, single pulsed ② 20 mJ PD Maximum power dissipation TC =25°C 30 W TC =100°C 12 W TSTG,TJ Storage and Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol Parameter Max Unit RθJC Thermal Resistance, Junction-to-Case 3.4 °C/W RθJA Thermal Resistance, Junction-to-Ambient 75 °C/W DEC 2018 Version2.0 1/7 Ascend Semicondutor Co.,Ltd ASDM40R065NE 40V N-Channel MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj =25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 -- -- V Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj =125℃) VDS=40V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.6 2.5 V RDS(on) Drain-Source On-State Resistance ④ VGS=10V, ID=20A -- 6.9 8.0 mΩ Tj =100℃ -- 7.8 -- mΩ RDS(on) Drain-Source On-State Resistance ④ VGS=4.5V, ID=10A -- 9.5 11 mΩ -- 794 -- pF -- 308 -- pF -- 27 -- pF 0.2 1.6 5 Ω -- 15 -- nC -- 7.7 -- nC -- 3 -- nC -- 3.4 -- nC -- 5.6 -- ns IDSS Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VDS=20V,ID=20A, Qgs Gate-Source Charge VGS=10V Qgd Gate-Drain Charge VDS=20V,VGS=0V, f=1MHz f=1MHz Switching Characteristics Td(on) Turn-on Delay Time Tr Turn-on Rise Time ID=20A, -- 47 -- ns Td(off) Turn-Off Delay Time RG=3Ω, -- 15 -- ns -- 6.4 -- ns Tf VDD=20V, VGS=10V Turn-Off Fall Time Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.9 1.2 V Trr Reverse Recovery Time Isd=20A, VGS=0V -- 6.1 -- ns Qrr Reverse Recovery Charge di/dt=100A/μs -- 0.6 -- nC NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.1mH, RG = 25Ω, IAS = 20A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 380μs; duty cycle≤ 2% DEC 2018 Version2.0 2/7 Ascend Semicondutor Co.,Ltd ASDM40R065NE 40V N-Channel MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage DEC 2018 Version2.0 Fig6. Maximum Safe Operating Area 3/7 Ascend Semicondutor Co.,Ltd ASDM40R065NE 40V N-Channel MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Qg - Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZθJC Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms DEC 2018 Version2.0 Fig11. Switching Time Test Circuit and waveforms 4/7 Ascend Semicondutor Co.,Ltd ASDM40R065NE 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM40R065NE-R 40R065N PDFN3.3*3.3-8 Tape&Reel Quantity 5000/Reel MARKING PACKAGE PDFN3.3x3.3-8 DEC 2018 Version2.0 Packing 40R065N 5/7 Ascend Semicondutor Co.,Ltd ASDM40R065NE 40V N-Channel MOSFET Dimensions(PDFN3.3×3.3-8) DEC 2018 Version2.0 6/7 Ascend Semicondutor Co.,Ltd ASDM40R065NE 40V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version2.0 7/7 Ascend Semicondutor Co.,Ltd