ASDM40R065NQ-R

ASDM40R065NQ 40V N-Channel MOSFET Feature ⚫ ⚫ ⚫ ⚫ ⚫ Split Gate Trench Technology Low RDS(ON) Product Summary Low Gate Charge Low Gate Resistance 100% UIS Tested V DS R DS(on),Typ I @ VGS=10 V D 40 V 6.5 mΩ 36 A Application ⚫ Power Switching Application DFN5*6-8 N-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25℃ unless otherwise noted) Parameter Drain - Source Voltage Gate - Source Voltage Symbol Value Unit VDS 40 V VGS ±20 V Continuous Drain Current 1 TC = 25℃ ID 36 A Continuous Drain Current 1 TC = 100℃ ID 21 A IDM 144 A Single Pulsed Avalanche Current3 IAS 31 A Single Pulsed Avalanche Energy3 EAS 240 mJ PD 83 W RθJA 62 ℃/W RθJC 2.4 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Pulsed Drain Current Power 2 Dissipation5 TC = 25℃ Thermal Resistance from Junction to Ambient6 Thermal Resistance from Junction to Case NOV 2018 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM40R065NQ 40V N-Channel MOSFET MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25℃ unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit Off Characteristics Drain - Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V 1 µA Gate - Body Leakage Current IGSS VGS = ±20V, VDS = 0V ±100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 V Drain-source On-resistance RDS(on) On Characteristics 40 V 4 Forward Transconductance gFS 1.0 1.7 VGS = 10V, ID = 10A 6.5 8.0 VGS = 4.5V, ID = 10A 10.5 13 VDS = 10V, ID = 10A 21 mΩ S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg 798 VDS = 20V, VGS = 0V, f = 1MHz 289 pF 19 3 VDS = 0V, VGS = 0V, f = 1MHz Ω Switching Characteristics 31 Total Gate Charge Qg Gate-source Charge Qgs Gate-drain Charge Qgd 3.8 Turn-on Delay Time td(on) 7 Turn-on Rise Time tr Turn-off Delay Ttime td(off) Turn-off Fall Time VDS = 20V, VGS = 10V, ID = 20A VDD = 20V, VGS = 10V, RL = 1Ω 2.8 RG = 3Ω 24 tf nC 6 ns 3.9 Source - Drain Diode Characteristics VSD Diode Forward Voltage4 1.2 VGS = 0V, IS = 10A Notes : 1.The maximum current rating is limited by package.And device mounted on a large heatsink 2.Pulse Test : Pulse Width ≤ 10μs, duty cycle ≤ 1%. 3.EAS condition: VDD = 20V,VGS = 10V, L = 0.5mH, RG = 25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width ≤ 300μs, duty cycle ≤ 2%. 5.The power dissipation PD is limited by TJ(MAX) = 150°C.And device mounted on a large heatsink 6.Device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. NOV 2018 Version1.0 2/7 www.ascendsemi.com 0755-86970486 V ASDM40R065NQ 40V N-Channel MOSFET Output Characteristics 21 Transfer Characteristics 8 VDS=1V Pulsed VGS=2.7V VGS=10V, 4.5V 18 VGS=2.8V 6 15 ID(A) ID(A) VGS=2.6V 12 4 9 TA=125℃ VGS=2.5V 6 2 TA=25℃ 3 TA=25℃ Pulsed 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 3.5 1.0 1.5 VDS(V) 2.0 2.5 3.0 VGS(V) RDS(ON) vs VGS RDS(ON) vs ID 20 12 Pulsed ID=10A TA=25℃ Pulsed 10 15 RDSON(mR) RDS(ON)(mR) VGS=4.5V 8.0 10 VGS=10V 6.0 TA=125℃ 5 4.0 TA=25℃ 0 2.0 0 4 8 12 16 2 20 4 ID(A) IS vs VSD 6 VGS(V) 8 10 100 125 Threshold Voltage 20 2.5 10 2.0 1 VTH(V) IS(A) TA=125℃ TA=25℃ ID=250uA 1.5 0.1 1.0 0.01 0.0 0.2 0.4 0.6 VDS(V) NOV 2018 Version1.0 3/7 0.8 1.0 0.5 25 50 75 TJ(℃ ) www.ascendsemi.com 0755-86970486 ASDM40R065NQ 40V N-Channel MOSFET Capacitance vs VDS 2500 f=1Mhz Pulse 2000 1000 Maximum Forward Biased Safe Operating Area TC=25℃ Single Pulse RθJC=1.5℃ /W 100 1500 100uS DC 10 ID(A) Capacitance(pF) 10uS 1mS 10mS 1000 1 500 0.1 0 0 5 10 15 20 VDS(V) 25 30 35 40 0.01 0.01 0.1 1 VDS(V) 10 100 Normalized Maximum Transient Thermal Impedance 10 TJ,PK=TC+PDM×ZθJC×RθJC RθJC=1.5℃ /W Duty Ratio=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,single pulse 1 ZθJC Duty Ratio=0.5 0.1 Single Pluse 0.01 1E-5 1E-4 0.001 0.01 0.1 1 10 100 Pluse Width(s) NOV 2018 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM40R065NQ 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM40R065NQ-R 40R065N DFN5*6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5*6-8 NOV 2018 Version1.0 40R065N 5/7 www.ascendsemi.com 0755-86970486 ASDM40R065NQ 40V N-Channel MOSFET DFN5x6_P, 8 Leads NOV 2018 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM40R065NQ 40V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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