ASDM120R065NQ-R

ASDM120R065NQ 120V N-Channel MOSFET General Features ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150°C operating temperature ● Pb-free lead plating Application ● DC/DC Converter ● Ideal for high-frequency Product Summary V DS 120 V R DS(on),Typ@ VGS=10 V 5.5 mΩ ID 90 A switching and synchronous rectification DFN5*6-8 N-Channel Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS 120 V Gate-Source Voltage VGS ±20 V ID 90 A ID (100℃) 64 A Pulsed Drain Current IDM 360 A Maximum Power Dissipation PD 130 W 1.04 W/℃ EAS 400 mJ TJ,TSTG -55 To 150 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 4) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Case RθJC 0.92 ℃/W Thermal Resistance,Junction-to-Ambient RθJA 62 ℃/W NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM120R065NQ 120V N-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 120 Zero Gate Voltage Drain Current IDSS VDS=96V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS, ID=250μA 1.2 1.7 2.5 V VGS=10V, ID=45A - 5.5 6.5 VGS=4.5V, ID=45A 6.6 7.8 VDS=5V,ID=50A 60 - S - 4240 - pF - 260 - pF - 29 - pF - 20 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS mΩ (Note3) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=60V,VGS=0V, F=1.0MHz Crss (Note 3) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=60V,ID=45A - 15 - nS td(off) VGS=10V,RG=1.6Ω - 40 - nS - 10 - nS - 90 - nC - 21 - nC - 23.5 - nC - - 1.2 V - - 90 A - 70 - nS - 137 - nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=60V,ID=45A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 2) VSD Diode Forward Current IS Reverse Recovery Time trr Reverse Recovery Charge VGS=0V,IS=45A TJ = 25°C, IF = 45A di/dt = 100A/μs Qrr (Note3) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 3. Guaranteed by design, not subject to production 4. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM120R065NQ 120V N-Channel MOSFET ID- Drain Current (A) Vgs Gate-Source Voltage (V) Typical Electrical and Thermal Characteristics ID=45A Vds Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 1 Output Characteristics Figure 4 Gate Charge ID- Drain Current (A) Is- Reverse Drain Current (A) VDS=5V Vgs Gate-Source Voltage (V) 150°C 25°C Vsd Source-Drain Voltage (V) Figure 5 Source- Drain Diode Forward Capacitance (pF) Figure 2 Transfer Characteristics Rdson On-Resistance(mΩ) VDS=60V VGS=4.5V VGS=10V TJ-Junction Temperature(°C) Vds Drain-Source Voltage (V) Figure 3 Rdson-Junction Temperature NOV 2018 Version1.0 Figure 6 Capacitance vs Vds 3/7 Ascend Semicondutor Co.,Ltd ASDM120R065NQ Power Dissipation (W) ID- Drain Current (A) 120V N-Channel MOSFET TJ-Junction Temperature (°C) Figure 7 Power De-rating Figure 9 Current De-rating ID- Drain Current (A) Normalized On-Resistance TJ-Junction Temperature(°C) ID=45A TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 10 Rdson-Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Figure 8 Safe Operation Area Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance NOV 2018 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM120R065NQ 120V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM120R065NQ-R 120R065N DFN5*6-8 Tape&Reel 4000/Reel MARKING PACKAGE 120R065N DFN5*6-8 NOV 2018 Version1.0 5/7 Ascend Semicondutor Co.,Ltd ASDM120R065NQ 120V N-Channel MOSFET DFN5x6_P, 8 Leads NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM120R065NQ 120V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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