ASDM30N90KQ-R

ASDM30N90KQ 30V N-Channel MOSFET Product Summary General Features ● Low Gate Charge ● Advanced Trench Technology VDS 30 V ● High Power and Current Handling Capability RDS(on),Typ.@ VGS=10 V 3.0 mΩ Application ID 90 A ● Provide Excellent RDS(ON) ● Load Swtich ● PWM applications ● Power management 1 TO-252 N-channel Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B TC =100ºC A Avalanche Current Single Pulse Avalanche Energy C L =0.3mH Units VDS 30 V VGS ±20 V ID A Pulsed Drain Current Power Dissipation TC =25ºC Maximum A TC =25ºC A 46 IDM 255 A IS 90 A EAS 135 mJ 65 W 32 W TJ, TSTG -55 to 175 ºC Symbol Maximum Units PD TC =100ºC Junction and Storage Temperature Range 90 Thermal Characteristics Parameter Maximum Junction-to-Case Steady-State RƟJC 2.3 Maximum Junction-to-Ambient Steady-State RƟJA 100 ºC/W FEB 2019 Version2.0 1/7 www.ascendsemi.com 0755-86970486 ASDM30N90KQ 30V N-Channel MOSFET Electrical Characteristics(TJ =25ºC unless otherwise noted) Value Symbol Parameter Conditions Units Min Typ Max 30 -- -- TJ =25ºC -- -- 1 TJ =125ºC -- -- 25 STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µA,VGS =0V IDSS Zero Gate Voltage Drain Current VDS =30V, VGS =0V V μA IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 1 1.7 2.4 V VGS =10V, ID =30A -- 3.0 4.5 mΩ RDS(ON) Static Drain-Source On-Resistance VGS =4.5V, ID =30A -- 4.8 6.5 mΩ gFS Forward Transconductance VDS =10V, ID =20A 16 -- -- S VSD Diode Forward Voltage IS =30A, VGS =0V -- -- 1 V IS Maximum Body-Diode Continuous Current -- -- 90 A -- 2120 -- -- 307 -- -- 253 -- -- 40 -- -- 5.4 -- B DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS =0V, VDS =15V, f =1MHZ pF SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge -- 9.6 -- tD(on) Turn-On Delay Time -- 15 -- tr Turn-On Rise Time -- 32 -- tD(off) Turn-Off Delay Time -- 15 -- tf Turn-Off Fall Time -- 12 -- trr Body Diode Reverse Recovery Time -- 23 -- ns Qrr Body Diode Reverse Recovery Charge -- 48 -- nC VGS =10V,VDS =15V, ID =30A VGS =10V,VDS =15V, ID =20A, RG =3Ω IF =30A, di/dt =100A/μs nC ns A. Single pulse width limited by maximum junction temperature. B. The maximum current rating is package limited. C. The power dissipation PD is based on TJ(MAX) =175ºC, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. FEB 2019 Version2.0 2/7 www.ascendsemi.com 0755-86970486 ASDM30N90KQ 30V N-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 120 80 100 ID (A) 100 ID (A) 120 10V 8V 6V 4.5V 4V 3.5V 60 80 60 40 40 20 20 0 0 1 2 3 4 VDS = 15V TJ = 125ºC TJ = 25ºC 0 5 0 1 2 VDS (Volts) Figure 1: On-Region Characteristics 5 6 10000 9 TJ = 25ºC Capacitance (pF) RDS(on) (mΩ) 4 Figure 2: Transfer Characteristics 10 8 7 6 VGS = 4.5V 5 Ciss 1000 Coss Crss 100 4 VGS = 10V VGS = 0 f = 1MHz 3 10 2 0 5 10 15 20 25 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current 5 10 15 20 25 30 VDS (Volts) Figure 4: Capacitance Characteristics 12 100 10 VDD = 15V IS (A) VGS (Volts) 3 VGS (Volts) 8 TJ = 125ºC 10 6 4 TJ = 25ºC 1 2 0 0 10 20 30 40 50 Qg (nC) Figure 5: Gate Charge Characteristics FEB 2019 Version2.0 3/7 0.1 0.2 0.4 0.6 0.8 1 VSD (Volts) Figure 6: Body Diode Forward Voltage www.ascendsemi.com 0755-86970486 1.2 ASDM30N90KQ 30V N-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 1.3 Normalized Vgs(th) Normalized RDS(on) 1.6 VGS = 10V ID = 30A 1.4 1.2 1.0 0.8 0.6 1.2 ID = 250µA 1.1 1.0 0.9 0.4 0.8 0.2 0.7 0.0 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 Temperature(ºC) Figure 7: On-Resistance vs. Junction Temperature 50 75 100 125 150 Figure 8: Vgs(th) vs. Junction Temperature 1.15 20 VGS = 0 ID = 250uA 1.10 18 RDS(on) (mΩ) Normalized BVDSS 25 Temperature(ºC) 1.05 VGS = 10V ID = 30A 16 14 12 10 1.00 8 TJ = 125ºC 6 0.95 4 2 TJ = 25ºC 0 -50 -25 0 25 50 75 100 125 150 2 TJ, Junction Temperature (ºC) Figure 9: BVDSS vs. Junction Temperature 4 5 6 7 8 9 10 1000 10 1 RDS(on) limited 100 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.1 0.01 1E-05 3 VGS, Gate-to-Source Voltage (V) Figure 10: On-Resistance vs. Gate-Source Voltage ID (Amps) Z Ɵ JC Normalized Transient Thermal Resistance 0.90 tp = 10us tp = 100us tp = 1ms tp = 10ms DC 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Transient Thermal Resistance FEB 2019 Version2.0 4/7 0.1 1 10 100 1000 VDS (Volts) Figure 12: Safe Operating Area www.ascendsemi.com 0755-86970486 ASDM30N90KQ 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing ASDM30N90KQ-R 30N90 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE TO-252 FEB 2019 Version2.0 Quantity 30N90 5/7 www.ascendsemi.com 0755-86970486 ASDM30N90KQ 30V N-Channel MOSFET TO-252 PACKAGE IN FORMATION 6\PERO $ 'LPHQVLRQVLQ0LOOLPHWHUV 'LPHQVLRQVLQ,QFKHV 0LQ 0D[ 0LQ 0D[     $     $     E     E     F     F     '     '     (     (     +    7