AGM310AP1

AGM310AP1 ● General Description Product Summary The AGM310AP1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID 30V 9.7mΩ 28A This device is ideal for load switch and battery protection applications. PDFN3*3 Pin Configuration ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGM310AP1 AGM310AP1 PDFN3*3 Table 1. Reel Size Tape width Quantity ---- 5000 ---- Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 30 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 28 A Drain Current-Continuous(Tc=100℃) 22 A Drain Current-Continuous@ Current-Pulsed (Note 2) 70 A Maximum Power Dissipation(Tc=25℃) 41 w Maximum Power Dissipation(Tc=100℃) 16 w Avalanche energy (Note 3) 75 mJ -55 To 150 ℃ Typ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.1 ℃/W www.agm-mos.com 1 VER2.6 AGM310AP1 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V gFS Forward Transconductance VDS=10V,ID=5A -- 10 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=15A -- 9.7 14 mΩ VGS=4.5V, ID=15A -- 15 22 mΩ -- 850 -- pF -- 130 -- pF -- 98 -- pF -- 1.9 -- Ω -- 4.7 -- nS -- 11 -- nS -- 17 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 5.6 -- nS Qg Total Gate Charge -- 16 -- nC Qgs Gate-Source Charge -- 3 -- nC Qgd Gate-Drain Charge -- 3.8 -- nC VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω VGS=10V, VDS=15V, ID=10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VG=VD=0V , Force Current -- -- 28 A VSD Forward on Voltage VGS=0V,IS=20A -- -- 1.2 V trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.6 AGM310AP1 Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 VGS=10V VGS=4.5V 25 0.2 0 0 0 0 50 100 150 Temperature (。C) 0.5 1 1.5 Drain-Source voltage (V) 200 Fig.3 Threshold Voltage V.S Junction Temperature 2 Fig.4 Resistance V.S Drain Current 2.5 20 ON Resistance Vgs(th ) 2 1.5 1 10 0.5 0 -50 50 Junction Temperature 0 150 0 Fig.5 On-Resistance VS Gate Source Voltage 30 Fig.6 On-Resistance V.S Junction Temperature 1.5 Normalized ON-Resistance 14 12 RDson(mΩ) 10 20 Drain Current(A) 10 8 6 4 2 0 1 0.5 3 www.agm-mos.com www.agm-mos.com 5 7 VGS( V ) 9 -50 3 3 0 50 100 Temperature 150 VER2.5 VER2.6 AGM310AP1 Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 4 VER2.6 AGM310AP1 Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 5 VER2.6 AGM310AP1 PDFN3333 Package OutlineData DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.70 0.75 0.80 b 0.25 0.30 0.35 C 0.10 0.15 0.25 D 3.25 3.35 3.45 D1 3.00 3.10 3.20 D2 1.78 1.88 1.98 D3 -- 0.13 -- E 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 H 0.30 0.39 0.50 0.65BSC e L 0.30 0.40 0.50 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 *Not specified www.agm-mos.com 6 VER2.6 AGM310AP1 Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.6