AP4503AGM

AP4503AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement D2 D2 D1 D1 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID 30V 28mΩ 6.9A -30V 36mΩ -6.3A ▼ Low On-resistance ▼ Fast Switching Performance G2 S2 SO-8 S1 G1 P-CH BVDSS RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 6.9 5.5 20 2 -55 to 150 -55 to 150 P-channel -30 ±20 -6.3 -5 -20 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 201126071 AP4503AGM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=4A Min. 30 1 - Typ. 6 8.4 1.4 4.7 5 8 18.5 9 485 80 75 Max. 28 42 3 1 25 ±100 13.5 770 - Units V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=±20V ID=6A VDS=24V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs Min. - Typ. 19 11 Max. 1.2 - Units V ns nC Reverse Recovery Time Reverse Recovery Charge 2 AP4503AGM P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o o Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. 6 12.4 2 7 8 7 34 26 860 150 140 Max. 36 55 -3 -1 -25 ±100 20 1380 - Units V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-6A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V IS=-6A, VGS=0V, dI/dt=100A/µs Min. - Typ. 23 14 Max. -1.2 - Units V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 3 AP4503AGM N-Channel 40 40 T A =25 ℃ 30 ID , Drain Current (A) 20 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T A =150 ℃ 30 10V 7.0V 5.0V 4.5V 20 V G =3.0V 10 V G =3.0V 10 0 0 1 2 3 4 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 34 1.8 I D = 4A T A = 25 C 30 o I D =6A V G =10V 26 Normalized R DS(ON) RDS(ON0 (m Ω) 1.4 1.0 22 30 18 2 4 6 8 10 -30 0 50 100 150 0.6 -50 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 10 8 1.2 o T j =150 C 6 T j =25 o C Normalized VGS(th) (V) 1.4 1.0 IS(A) 4 0.8 2 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4503AGM N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) 10 C iss 8 6 ID=6A V DS = 24 V C (pF) 100 C oss C rss 4 2 0 0 3 6 9 12 15 18 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 10 100us ID (A) 1ms 1 0.2 0.1 0.1 10ms 100ms 0.1 0.05 PDM t 0.02 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 oC/W T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 30 0.01 0.0001 -30 Single Pulse 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 5 AP4503AGM P-Channel 40 40 T A =25 C o 30 -ID , Drain Current (A) -ID , Drain Current (A) - 10V - 7.0V - 5.0V - 4.5V T A = 150 o C 30 - 10V - 7.0V - 5.0V - 4.5V 20 V G = - 3 .0V 20 V G = - 3 .0V 10 10 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 1.6 I D = -4 A T A =25 C 1.4 o I D = -6 A V G = - 10V RDS(ON) (m Ω) 40 Normalized R DS(ON) 1.2 1.0 30 0.8 30 20 2 4 6 8 10 -30 0 50 100 150 0.6 -50 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 10 8 Normalized -VGS(th) (V) 1.2 1.4 1.0 -IS(A) 6 T j =150 o C 4 T j =25 o C 0.8 2 0 0.6 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4503AGM P-Channel f=1.0MHz 15 10000 -VGS , Gate to Source Voltage (V) 12 I D = -6A V DS = -24V 9 1000 C iss C (pF) 6 100 C oss C rss 3 0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 10 -ID (A) 100us 1ms 1 0.2 0.1 0.1 10ms 100ms 0.1 0.05 PDM t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 30 0.01 0.0001 0.01 -30 Single Pulse 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 7 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D SYMBOLS Millimeters MIN NOM MAX A 8 7 6 5 E1 1 E 1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 0 1.55 0.18 0.41 0.22 4.90 3.90 6.15 0.71 4.00 1.27 TYP 1.75 0.25 0.51 0.25 5.00 4.00 6.50 1.27 8.00 A1 B C D E1 E L θ 2 3 4 e B e A A1 DETAIL A L θ 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4503AGM YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 8