AGM30P10AP

AGM30P10AP Product Summary  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology BVDSS RDSON -30V ID 11mΩ -23A PRPAK3.3X3.3 Pin Configuration Description AGM30P10AP is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Package Marking and Ordering Information Device Marking Device AGM30P10AP AGM30P10AP Device Package Reel Size DFN3.3*3.3 Tape width --mm Quantity --mm 5000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Value -30 ±20 Unit V V Drain Current-Continuous(Tc=25℃) (Note 1) -23 A Drain Current-Continuous(Tc=100℃) -19 A -62 A ID IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 2) Maximum Power Dissipation(T c=25℃) 37 W Maximum Power Dissipation(T c=100℃) 27 W Avalanche energy (Note 3) 75 mJ -55 To 150 ℃ PD EAS TJ,TSTG Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 1 Max Unit --- 70 ℃/W --- 3.4 ℃/W VER2.5 AGM30P10AP Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS(th) gFS RDS(ON) VGS=0V ID=250μA -30 V VDS=-24V,VGS=0V -1 VGS=±20V,VDS=0V Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 1.2 1.3 VDS=-5V,ID=-20A 30 VGS=-10V, ID=-20A 11 μA ±100 nA 2.1 V S 13.9 mΩ mΩ VGS=-4.5V, ID=-15A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Rg VDS=-15V, VGS=0V, F=1MHZ Reverse Transfer Capacitance Gate resistance 1380 pF 310 pF pF 237 VGS=0V, VDS=0V,f=1.0MHz Ω 9 Switching Times 8 nS 73 nS Turn-Off Delay Time 61.8 nS tf Turn-Off Fall Time 24.4 nS Qg Total Gate Charge 22 nC Qgs Gate-Source Charge 8.7 nC Qgd Gate-Drain Charge 7.2 nC td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=-10V, VDD=-15V, ID=-15A,RGEN=3.3 VGS=-10V, VDS=-25V, ID=-12A Source-Drain Diode Characteristics -23 A VGS=0V,IS=-1A 1.0 V Reverse Recovery Time IF=-15A , dI/dt=100A/µs , 19 ns Reverse Recovery Charge ·TJ=25℃ 9 nc IS Continuous Source Current VSD Forward on Voltage trr Qrr VG=VD=0V , Force Current Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.5 AGM30P10AP Typical Characteristics 150 -ID Drain Current (A) 125 VGS=-10V VGS=-7V 100 75 VGS=-5V 50 VGS=-4.5V VGS=-3V 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 10 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-15V 8 TJ=150℃ TJ=25℃ 4 0 0.00 0.25 0.50 0.75 ID=-15A 8 6 4 2 0 1.00 0 -VSD , Source-to-Drain Voltage (V) 18 27 36 45 QG , Total Gate Charge (nC) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 9 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃ ) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.agm-mos.com 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 VER2.5 AGM30P10AP 1000.00 10000 F=1.0MHz 10us Ciss 100us 1000 10.00 -ID (A) Capacitance (pF) 100.00 Coss 1.00 Crss 100 1ms 10ms 100ms DC 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 21 0.1 25 1 10 100 -VDS (V) -VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.agm-mos.com Fig.11 Unclamped Inductive Switching Waveform 4 VER2.5 AGM30P10AP PDFN3333 Package Outline Data DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.70 0.75 0.80 b 0.25 0.30 0.35 C 0.10 0.15 0.25 D 3.25 3.35 3.45 D1 3.00 3.10 3.20 D2 1.78 1.88 1.98 D3 -- 0.13 -- E 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 H 0.30 0.39 0.50 0.65BSC e L 0.30 0.40 0.50 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 *Not specified www.agm-mos.com 5 VER2.5 AGM30P10AP Disclaimers: Information furnished in this document is believed to be accurate and reliable. However, Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Shenzhen core control source complies with the agreement. Products and information provided in this document have no infringement of patents. Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the first version which is made in 12-Apr-18. This document supersedes and replaces all information previously supplied. is a registered trademark of Shenzhen Core Control Source Semiconductor Co., Ltd. Copyright ©2017 Shenzhen Core Control Source Semiconductor Co., Ltd. Printed All rights reserved. www.agm-mos.com 6 VER2.5