AGM307MBP
● General Description
Product Summary
The AGM307MBP combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low RDS(ON) .
This device is ideal for load switch and battery
protection applications.
● Features
■ Advance
high cell density Trench technology
■ Low
■ Low
RDS(ON) to minimize conductive loss
Gate Charge for fast switching
■ Low
Thermal resistance
BVDSS
RDSON
ID
30V
7.0mΩ
28A
WQFN3*3 Pin Configuration
● Application
■ MB/VGA Vcore
■ SMPS
■ POL
2nd Synchronous Rectifier
application
■ BLDC
Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AGM307MBP
AGM307MBP
WQFN3.0x3.0
----
----
5000
Table 1.
Absolute Maximum Ratings (Tc=25℃)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (VGS=0V)
30
V
VGS
Gate-Source Voltage (VDS=0V)
±20
V
Drain Current-Continuous(Tc=25℃) (Note 1)
28
A
Drain Current-Continuous(Tc=100℃)
17
A
Drain Current-Continuous@ Current-Pulsed (Note 2)
40
A
Maximum Power Dissipation(Tc=25℃)
24
w
Maximum Power Dissipation(Tc=100℃)
9.5
w
Avalanche energy (Note 3)
33
mJ
ID
IDM (pluse)
PD
EAS
TJ,TSTG
Table 2.
Operating Junction and Storage Temperature Range
-55 To 150
℃
Thermal Characteristic
Symbol
Typ
Parameter
Max
Unit
RθJA
Thermal Resistance Junction-ambient (Steady State)1
---
--
℃/W
RθJC
Thermal Resistance Junction-Case1
---
5.26
℃/W
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VER2.5
AGM307MBP
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
30
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS=30V,VGS=0V
--
--
1
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
1.2
1.6
2.5
V
gFS
Forward Transconductance
VDS=10V,ID=15A
--
10
--
S
RDS(on)
Drain-Source On-State Resistance
VGS=10V, ID=20A
--
7.0
9.5
mΩ
VGS=4.5V, ID=10A
--
12
16
mΩ
--
830
--
pF
--
142
--
pF
--
119
--
pF
--
--
--
Ω
--
6.0
--
nS
--
5.0
--
nS
--
25
--
nS
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VDS=15V,VGS=0V,
F=1MHZ
VGS=0V,
VDS= 0V,f=1.0MHz
Switching Times
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
--
7.0
--
nS
Qg
Total Gate Charge
--
19
--
nC
Qgs
Gate-Source Charge
--
6.3
--
nC
Qgd
Gate-Drain Charge
--
4.5
--
nC
--
--
25
A
VGS=10V,VDS=30V,
ID=2A,RGEN=3Ω
VGS=10V, VDS=15V,
ID=20A
Source-Drain Diode Characteristics
ISD
Source-Drain Current(Body Diode)
VSD
Forward on Voltage
VGS=0V,Is=30A
--
--
1.2
V
trr
Reverse Recovery Time
IF=30A , dI/dt=100A/µs ,
--
7.0
--
ns
Qrr
Reverse Recovery Charge
TJ=25℃
--
6.3
--
nc
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: TJ=25℃
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VER2.5
AGM307MBP
Typical Performance Characteristics
Figure 2: Typical Transfer Characteristics
Figure1: Output Characteristics
100
ID (A)
ID (A)
100
10V
8V
80
80
3.5V
5V
60
60
40
40
3V
125℃
20
25℃
20
VGS=2.5V
VDS(V)
0
0
2.0
4.0
6.0
8.0
0
10.0
1
2
3
4
5
6
Figure 4: Body Diode Characteristics
Figure 3:On-resistance vs. Drain Current
14
VGS(V)
0
RDS(ON) (mΩ)
IS(A)
1000
12
100
V GS=4.5V
10
8
V GS=10V
6
4
ID(A)
0
5
10
15
20
25
1
0.2
30
Figure 5: Gate Charge Characteristics
10
8
0.4
0.6
V SD(V)
1.0
1.2
1.4
1.6
1.8
C(pF)
VDS=15V
ID=20A
10000
C iss
1000
Coss
4
100
C rss
2
Q g(nC)
0
0.8
Figure 6: Capacitance Characteristics
VGS(V)
6
0
25℃
150℃
10
4
8
10
15
10
0
20
V DS(V)
5
10
15
20
25
30
0
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VER2.5
AGM307MBP
Figure 8: Normalized on Resistance vs.
Junction Temperature
Figure 7: Normalized Breakdown Voltage vs.
Junction Temperature
VBR(DSS)
R DS(on)
2.5
1.3
1.2
2.0
1.1
1.5
1.0
1.0
0.9
0
-100
-50
Tj (℃ )
50
0
100
150
0.5
-100
200
0
50
100
150
200
Figure 10: Maximum Continuous Drain Current
vs. Case Temperature
Figure 9: Maximum Safe Operating Area
103
Tj (℃)
-50
ID(A)
48
ID(A)
40
10μs
102
32
100μs
1ms
101
24
10ms
Limited by R DS(on)
16
100ms
100
TC=25℃
Single pulse
-1
8
DC
VDS (V)
10
0.1
1
10
0
100
0
25
50
Tc (℃ )
75
100
125
150
175
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
ZthJ-C(℃ /W)
101
100
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
10-2
10-3 -6
10
10-5
10-4
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10-3
T P(s)
10-2
PDM
10-1
t1
t2
Notes:
1.Duty factor D=t1/t2
2.Peak T J=P DM*ZthJC+T C
10-1
100
101
4
VER2.5
AGM307MBP
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
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VER2.5
AGM307MBP
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VER2.5
AGM307MBP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequencesDo not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on May 10, 2022. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
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VER2.5
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