AGM308MBP

AGM308MBP ● General Description Product Summary The AGM308MBP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance ■ POL ID 30V 7.0mΩ 28A D2 D2 D1 D1 2nd Synchronous Rectifier application ■ BLDC RDSON PDFN3*3 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS BVDSS S1 G1 S2 G2 Motor driver Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM308MBP AGM308MBP PDFN3*3 ---- ---- 5000 Table 1. Absolute Maximum Ratings (Tc=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 30 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 28 A Drain Current-Continuous(Tc=100℃) 17 A Drain Current-Continuous@ Current-Pulsed (Note 2) 40 A Maximum Power Dissipation(Tc=25℃) 24 w Maximum Power Dissipation(Tc=100℃) 9.5 w Avalanche energy (Note 3) 33 mJ -55 To 150 ℃ Typ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- -- ℃/W RθJC Thermal Resistance Junction-Case1 --- 5.26 ℃/W www.agm-mos.com 1 VER2.5 AGM308MBP Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V gFS Forward Transconductance VDS=10V,ID=15A -- 10 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=20A -- 7.0 9.5 mΩ VGS=4.5V, ID=10A -- 12 16 mΩ -- 830 -- pF -- 142 -- pF -- 119 -- pF -- -- -- Ω -- 6.0 -- nS -- 5.0 -- nS -- 25 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 7.0 -- nS Qg Total Gate Charge -- 19 -- nC Qgs Gate-Source Charge -- 6.3 -- nC Qgd Gate-Drain Charge -- 4.5 -- nC -- -- 25 A VGS=10V,VDS=30V, ID=2A,RGEN=3Ω VGS=10V, VDS=15V, ID=20A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,Is=30A -- -- 1.2 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , -- 7.0 -- ns Qrr Reverse Recovery Charge TJ=25℃ -- 6.3 -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM308MBP Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 100 ID (A) ID (A) 100 10V 8V 80 80 3.5V 5V 60 60 40 40 3V 125℃ 20 25℃ 20 VGS=2.5V VDS(V) 0 0 2.0 4.0 6.0 8.0 0 10.0 1 2 3 4 5 6 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 14 VGS(V) 0 RDS(ON) (mΩ) IS(A) 1000 12 100 V GS=4.5V 10 8 V GS=10V 6 4 ID(A) 0 5 10 15 20 25 1 0.2 30 Figure 5: Gate Charge Characteristics 10 8 0.4 0.6 V SD(V) 1.0 1.2 1.4 1.6 1.8 C(pF) VDS=15V ID=20A 10000 C iss 1000 Coss 4 100 C rss 2 Q g(nC) 0 0.8 Figure 6: Capacitance Characteristics VGS(V) 6 0 25℃ 150℃ 10 4 www.agm-mos.com 8 10 15 10 0 20 3 0 V DS(V) 5 10 15 20 25 30 VER2.5 AGM308MBP Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) R DS(on) 2.5 1.3 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 -50 Tj (℃ ) 50 0 100 150 0.5 -100 200 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 103 Tj (℃) -50 ID(A) 48 ID(A) 40 10 10μs 2 32 100μs 1ms 101 24 10ms Limited by R DS(on) 16 100ms 100 TC=25 ℃ Single pulse -1 8 DC VDS (V) 10 0.1 1 10 0 100 0 25 50 Tc (℃ ) 75 100 125 150 175 Maximum Effective Transient Thermal Impedance, Junction-to-Case ZthJ-C (℃ /W) 101 100 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 10-4 www.agm-mos.com 10-3 T P(s) 10-2 PDM 10-1 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM*ZthJC+T C 10-1 100 101 4 VER2.5 AGM308MBP Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 5 VER2.5 AGM308MBP PDFN3333 Package OutlineData DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.70 0.75 0.80 b 0.25 0.30 0.35 C 0.10 0.15 0.25 D 3.25 3.35 3.45 D1 3.00 3.10 3.20 D2 1.78 1.88 1.98 D3 -- 0.13 -- E 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 H 0.30 0.39 0.50 0.65BSC e L 0.30 0.40 0.50 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 *Not specified www.agm-mos.com 6 VER2.5 AGM308MBP Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on May 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.5