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PESDHC2FD15VUF

PESDHC2FD15VUF

  • 厂商:

    CNNPCHIP(新晶微)

  • 封装:

    DFN-1006-2

  • 描述:

    ESD抑制器/TVS二极管 VRWM=15V VBR(Min)=13.3V VC=20V@IPP=5A DFN1006-2

  • 数据手册
  • 价格&库存
PESDHC2FD15VUF 数据手册
1-Line Bi-directional TVS Diode PESDHC2FD15VUF Description Features The PESDHC2FD15VUF is a 15V bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The PESDHC2FD15VUF complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into an ultra-small 1.0 x 0.6 x 0.5mm lead-free DFN package. The small size and high ESD surge protection make PESDHC2FD15VUF an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications.  Ultra small package: 1.0 x0.6 x0.5mm  Protects one data or power line  Ultra low leakage:nA level Mechanical Characteristics Applications             Package: DFN1006-2 (1.0 x0.6 x0.5mm) Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below Dimensions and Pin Configuration     Operating voltage:15V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 5A (8/20µs)  RoHS Compliant Cellular Handsets and Accessories Personal Digital Assistants Notebooks and Handhelds Portable Instrumentation Digital Cameras Peripherals Audio Players Marking Information 22 * 22 = Device Marking Code Package Dimensions Circuit and Pin Schematic Ordering Information Part Number Marking Packaging Reel Size PESDHC2FD15VUF 22 10000/Tape & Reel 7 inch Rev. 1_Mar, 2019 1 PESDHC2FD15VUF 1-Line Bi-directional TVS Diode Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power(8/20µs) Ppk 100 W Peak Pulse Current(8/20µs) IPP 5 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 15 V 13.3 Test Condition V IT = 1mA Reverse Leakage Current IR 0.2 μA VRWM = 12V Clamping Voltage VC 16 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 20 V IPP = 5A (8 x 20µs pulse) Junction Capacitance CJ 15 pF VR = 0V, f = 1MHz Rev. 1_Mar, 2019 7.5 2 kV 1-Line Bi-directional TVS Diode PESDHC2FD15VUF Typical Performance Characteristics (TA=25℃ unless otherwise Specified) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current Power Derating Curve 100 % of Peak Pulse Current 90 80 70 60 50 40 30 20 10 0 0 20 40 Time_t(uS) 60 80 ESD Clamping Voltage 8 X 20μs Pulse Waveform Rev. 1_Mar, 2019 8 kV Contact per IEC61000−4−2 3 1-Line Bi-directional TVS Diode PESDHC2FD15VUF DFN1006-2 Package Outline Drawing A DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.450 0.500 0.550 0.018 0.020 0.022 A1 0.000 0.020 0.050 0.000 0.001 0.002 b 0.450 0.50 0.550 0.018 0.020 0.022 c 0.120 0.150 0.180 0.005 0.006 0.007 D 0.950 1.000 1.050 0.037 0.039 0.041 SYM e 0.65 BSC 0.026 BSC E 0.55 0.60 0.65 0.022 0.024 0.026 L 0.20 0.25 0.30 0.008 0.010 0.012 L1 0.05REF h 0.07 0.12 0.002REF 0.17 0.003 0.005 Suggested Land Pattern SYM Rev. 1_Mar, 2019 DIMENSIONS MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 4 0.007
PESDHC2FD15VUF 价格&库存

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