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NSiP83086V-DSWTR

NSiP83086V-DSWTR

  • 厂商:

    NOVOSENSE(纳芯微)

  • 封装:

    SOW20_300MIL

  • 描述:

    RS485收发器 3V~5.5V 16Mbps SOW20_300MIL

  • 数据手册
  • 价格&库存
NSiP83086V-DSWTR 数据手册
NSiP83086 Signal Isolated RS-485 Transceiver With Integrated DC to DC Converter Datasheet (EN) 1.1 Product Overview NSiP83086 series are high reliability isolated full duplex RS-485 transceiver with integrated DC to DC converter. The NSiP83086 isolated DC to DC converter uses on-chip transformer. The feedback PWM signal is sent to primary side(Isolator Side1) by a digital isolator based on Novosense capacity isolation technology. The NSiP83086 series are safety certified by UL1577 supporting 5kVrms insulation withstand voltage, while the high integrated solution can help to simplify system design and improve reliability. The Bus pins of NSiP83086 are protected from ±8kV system level ESD to GND2. The device features a fail-safe circuitry, which guarantees a logic-high receiver output when the receiver inputs are open or shorted. The device have 96kΩ input impedance that allows up to 256 transceivers on the bus. Key Features  Up to 5000Vrms Insulation voltage  ISO-Power integrated isolated DC-to-DC converter  I/O voltage range supports 1.8~5.5V MCU  RoHS-compliant packages: SOW20 SOW16 Safety Regulatory Approvals  UL recognition: up to 5000VRMS for 1 minute per UL1577  CQC certification per GB4943.1-2022  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated RS-485 communication  Smart electric meter and water meter  Security and protection monitoring Device Information Part Number NSiP83086(C)(V)-DSWTR Package SOW20 Body Size 12.80mm × 7.50mm NSiP83086(V)-DSWR SOW16 10.30mm x 7.50mm Note: (C), (V) could be empty representing 5V output version. V represents 3.3V output version, C version has SEL pin which can choose 3.3/5V output  Power supply voltage: VDD: 4.5V to 5.5V for NSiP83086 3V to 5.5V for NSiP83086C and NSiP83086V Functional Block Diagrams VDDL: 1.8V to 5.5V  Over current and over temperature protection  High CMTI: ±150kV/us  Data rate: 16Mbps  Up to 256 transceivers on the bus  High system level EMC performance: BUS Pins w.r.t to GND2 meet IEC61000-4-2 ±8kV ESD Other Pins w.r.t to GND2 meet IEC61000-4-2 ±7kV ESD  Operation temperature: -40℃~105℃ Copyright © 2023, NOVOSENSE NSiP83086(V)-DSWTR NSiP83086C-DSWTR NSiP83086(V)-DSWR Figure 1. NSiP83086 Block Diagrams Page 1 NSiP83086 Datasheet (EN) 1.1 INDEX 1. PIN CONFIGURATION AND FUNCTIONS .................................................................................................................................. 3 2. ABSOLUTE MAXIMUM RATINGS ............................................................................................................................................... 7 3. RECOMMENDED OPERATING CONDITIONS ............................................................................................................................ 7 4. THERMAL INFORMATION ......................................................................................................................................................... 7 5. SPECIFICATIONS ....................................................................................................................................................................... 8 5.1. 5.2. 5.3. 5.4. DC ELECTRICAL CHARACTERISTICS ......................................................................................................................................... 8 SWITCHING ELECTRICAL CHARACTERISTICS ............................................................................................................................ 10 TYPICAL PERFORMANCE CHARACTERISTICS ............................................................................................................................ 11 PARAMETER MEASUREMENT INFORMATION............................................................................................................................. 12 6. HIGH VOLTAGE FEATURE DESCRIPTION............................................................................................................................... 14 6.1. 6.2. 6.3. INSULATION AND SAFETY RELATED SPECIFICATIONS................................................................................................................. 14 DIN VDE V 0884-11(VDE V 0884-11):2017-01 INSULATION CHARATERISTICS .......................................................... 15 REGULATORY INFORMATION ................................................................................................................................................. 17 7. FUNCTION DESCRIPTION ....................................................................................................................................................... 17 7.1. 7.2. 7.3. 7.4. TRUE FAIL-SAFE RECEIVER INPUTS ....................................................................................................................................... 17 TRUTH TABLES .................................................................................................................................................................. 18 EMI CONSIDERATIONS ........................................................................................................................................................ 18 OUTPUT SHORT AND OVER TEMPERATURE PROTECTION .......................................................................................................... 18 8. APPLICATION NOTE ................................................................................................................................................................ 19 8.1. 8.2. 8.3. 8.4. 256 TRANSCEIVERS ON THE BUS .......................................................................................................................................... 19 ESD PROTECTION ............................................................................................................................................................... 19 LAYOUT CONSIDERATIONS ..................................................................................................................................................... 19 TYPICAL APPLICATION .......................................................................................................................................................... 19 9. PACKAGE INFORMATION ........................................................................................................................................................ 21 10. ORDERING INFORMATION ................................................................................................................................................... 22 11. DOCUMENTATION SUPPORT ............................................................................................................................................... 22 12. TAPE AND REEL INFORMATION ........................................................................................................................................... 23 13. REVISION HISTORY ............................................................................................................................................................... 25 Copyright © 2023, NOVOSENSE Page 2 NSiP83086 Datasheet (EN) 1.1 1. Pin Configuration and Functions Figure 1.1 NSiP83086(V)-DSWTR Package Table1.1 NSiP83086(V)-DSWTR Pin Configuration and Description PIN NO. SYMBOL FUNCTION 1 GND1 Ground 1, the ground reference for Isolator Side 1 2 VDD1 Power Supply for Isolator Side 1, It is recommended this pin have a 0.1μF + 10 μF capacitor to GND1 (Pin1, Pin3) 3 GND1 Ground 1, the ground reference for Isolator Side 1 4 R Receiver output 5 /RE Receiver enable input, this is an active low input 6 DE Driver enable input, this is an active high input 7 D Driver transmit data input 8 VDDL I/O Power Supply input, Side1 I/O logic level 9 GND1 Ground 1, the ground reference for Isolator Side 1 10 GND1 Ground 1, the ground reference for Isolator Side 1 11 GND2 Ground 2, the ground reference for Isolator Side 2 12 VISOIN Isolated power supply input. This pin must be connected externally to VISOOUT. It is recommended this pin have a 0.1 μF capacitor to GND2 (Pin11). Connect this pin to VISOOUT through a ferrite bead and short trace length for operation. 13 Y Non-inverting Driver Output. When the driver is disabled, or when VDDL is powered down, Pin Y is put into a high impedance state to avoid overloading the bus. 14 GND2 Ground 2, the ground reference for Isolator Side 2 15 Z Inverting Driver Output. When the driver is disabled, or when VDD is powered down, Pin Z is put into a high impedance state to avoid overloading the bus. 16 GND2 Ground 2, the ground reference for Isolator Side 2 17 B Inverting Receiver Input Copyright © 2023, NOVOSENSE Page 3 NSiP83086 Datasheet (EN) 1.1 18 A Non-inverting Receiver Input 19 VISOOUT Isolated Power Supply Output. This pin must be connected externally to VISOIN. It is recommended this pin have a 0.1 μF and 10μF capacitor to GND2 (Pin20). Connect this pin through a ferrite bead and short trace length to VISOIN for operation. 20 GND2 Ground 2, the ground reference for Isolator Side 2 Figure 1.2 NSiP83086C-DSWTR Package Table1.2NSiP83086C-DSWTR Pin Configuration and Description PIN NO. SYMBOL FUNCTION 1 GND1 Ground 1, the ground reference for Isolator Side 1 2 VDD1 Power Supply for Isolator Side 1, It is recommended this pin have a 0.1μF + 10 μF capacitor to GND1 (Pin1, Pin3) 3 GND1 Ground 1, the ground reference for Isolator Side 1 4 R Receiver output 5 /RE Receiver enable input, this is an active low input 6 DE Driver enable input, this is an active high input 7 D Driver transmit data input 8 VDDL I/O Power Supply input, Side1 I/O logic level 9 GND1 Ground 1, the ground reference for Isolator Side 1 10 GND1 Ground 1, the ground reference for Isolator Side 1 11 SEL 12 VISOIN 13 Y Non-inverting Driver Output. When the driver is disabled, or when VDDL is powered down, Pin Y is put into a high impedance state to avoid overloading the bus. 14 GND2 Ground 2, the ground reference for Isolator Side 2 VISO output voltage select, VISOOUT =5V when SEL is floating or connect to VISOIN, VISOOUT =3.3V when SEL short to GND2 Isolated power supply Input. This pin must be connected externally to VISOOUT. It is recommended this pin have a 0.1 μF capacitor to GND2. Connect this pin to VISOOUT through a ferrite bead and short trace length for operation. Copyright © 2023, NOVOSENSE Page 4 NSiP83086 Datasheet (EN) 1.1 15 Z Inverting Driver Output. When the driver is disabled, or when VDD is powered down, Pin Z is put into a high impedance state to avoid overloading the bus. 16 GND2 Ground 2, the ground reference for Isolator Side 2 17 B Inverting Receiver Input 18 A Non-inverting Receiver Input 19 VISOOUT Isolated Power Supply Output. This pin must be connected externally to VISOIN. It is recommended this pin have a 0.1 μF and 10μF capacitor to GND2 (Pin20). Connect this pin through a ferrite bead and short trace length to VISOIN for operation. 20 GND2 Ground 2, the ground reference for Isolator Side 2 Figure 1.3 NSiP83086(V)-DSWR Package Table1.3NSiP83086(V)-DSWR Pin Configuration and Description PIN NO. SYMBOL FUNCTION 1 GND1 Ground 1, the ground reference for Isolator Side 1 2 VDD1 Power Supply for Isolator Side 1. It is recommended this pin have a 0.1 μF + 10 μF capacitor to GND1 (Pin1) 3 R Receiver output 4 /RE Receiver enable input, this is an active low input 5 DE Driver enable input, this is an active high input 6 D Driver transmit data input 7 VDDL I/O Power Supply input, Side1 I/O logic level 8 GND1 Ground 1, the ground reference for Isolator Side 1 9 GND2 Ground 2, the ground reference for Isolator Side 2 10 NC Not Connected 11 Y Non-inverting Driver Output. When the driver is disabled, or when VDD is powered down, Pin Y is put into a high impedance state to avoid overloading the bus. 12 Z Inverting Driver Output. When the driver is disabled, or when VDD is powered down, Pin Z is put Copyright © 2023, NOVOSENSE Page 5 NSiP83086 Datasheet (EN) 1.1 into a high impedance state to avoid overloading the bus. 13 B Inverting Receiver Input 14 A Non-inverting Receiver Input 15 VISOOUT Isolated Power Supply Output. It is recommended this pin have a 0.1 μF and 10μF capacitor to GND2 (Pin16). 16 GND2 Ground 2, the ground reference for Isolator Side 2. Copyright © 2023, NOVOSENSE Page 6 NSiP83086 Datasheet (EN) 1.1 2. Absolute Maximum Ratings Parameters Symbol Min Typ Max Unit Power Supply Voltage VDD, VDDL -0.5 6 V Maximum Input Voltage /RE, DE, D -0.4 VDDL+0.4 V Driver Output/Receiver Input Voltage VA, VB, VY, VZ -7 12 V IO -15 15 mA Operating Temperature TOPR -40 105 ℃ Junction Temperature TJ -40 150 ℃ Storage Temperature TSTG -40 150 ℃ HBM ±8000 V CDM ±2000 V R output current Electrostatic discharge Comments 3. Recommended Operating Conditions Parameters Symbol Min Typ Max Unit VDD 4.5 5 5.5 V VDD 3 3.3/5 5.5 V Topr -40 105 ℃ Side1 High Level Input Voltage VIH 0.7*VDDL VDDL V Side1 Low Level Input Voltage VIL 0 0.3*VDDL V Data rate DR NSiP83086 Power Supply Voltage NSiP83086C and NSiP83086V Power Supply Voltage Operating Temperature 16 Mbps 4. Thermal Information Parameters Symbol SOW20 SOW16 Unit IC Junction-to-Air Thermal Resistance θJA 51.8 51.5 °C/W Junction-to-top characterization parameter ψJT 2.6 2.6 °C/W Junction-to-board characterization parameter ψJB 20.1 17.8 °C/W Copyright © 2023, NOVOSENSE Page 7 NSiP83086 Datasheet (EN) 1.1 5. Specifications 5.1. DC Electrical Characteristics (VDD=4.5V~5.5V, VDDL=1.8~5.5V, Ta=-40℃ to 105℃. Unless otherwise noted, Typical values are at VDD=VDDL=5V,VISOOUT=5V, Ta = 25℃) Parameters Symbol Min Power supply voltage VDD1 NSiP83086 Max Unit 4.5 5.5 V VDDL 1.8 5.5 V Power supply voltage VDD1 3 5.5 V NSiP83086C/NSiP83086V VDDL 1.8 5.5 V 72 90 mA RL=120Ω (500kbps) 118 150 mA RL=54Ω IDD 100 130 mA RL=120Ω (16Mbps) 130 160 mA RL=54Ω 5 mA IDDL Supply current IDD 49 72 mA RL=120Ω (500kbps) 78 103 mA RL=54Ω IDD 58 83 mA RL=120Ω (16Mbps) 75 101 mA RL=54Ω 5 mA 3V≤VDD≤3.6 V VISOOUT = 3.3V IDDL Supply current IDD 40 61 mA RL=120Ω (500kbps) 61 84 mA RL=54Ω IDD 45 69 mA RL=120Ω (16Mbps) 60 83 mA RL=54Ω 5 mA 4.5V≤VDD≤5.5 V VISOOUT = 3.3V Comments IDD Supply current VISOOUT = 5V Typ IDDL VISOOUT 5 V NSiP83086 VISOOUT 3.3/5 V NSiP83086C VISOOUT 3.3 V NSiP83086V Thermal-Shutdown Threshold TTS 165 ℃ Thermal-Shutdown Hysteresis TTSH 15 ℃ Common Immunity CMTI 150 kV/us Isolated supply voltage Mode Transient Copyright © 2023, NOVOSENSE 100 Figure 5.14 Page 8 NSiP83086 Datasheet (EN) 1.1 Side1 Input High Voltage VIH 0.7*VDDL V DE, D, /RE Input Low Voltage VIL 0.3*VDDL V DE, D, /RE Input Current II -20 20 uA D, DE, /RE Output Voltage High VOH 0.8*VDDL V IOH = -4mA Output Voltage Low VOL 0.2*VDDL V IOL = 4mA Output Short-Circuit Current IOSR 150 mA 0 ≤ VR ≤VDDL Three-State Output Current IOZR 15 uA 0 ≤ VR ≤ VDDL, /RE = high Input Capacitance CIN pF DE, D, /RE 5.5 V No Load,VISOOUT=5V 2.7 5.5 V Figure 5.9,RL=120Ω, VIsoout=5V 2.1 5.5 V Figure 5.9,RL=54Ω, VIsoout=5V 2 Driver Differential Output Voltage Change in magnitude of the differential output voltage Common-Mode Voltage | VOD | Common-Mode Voltage No Load,VISOOUT=3.3V 1.8 Figure 5.9,RL=120Ω, VIsoout=3.3V 1.5 Figure 5.9,RL=54Ω, VIsoout=3.3V Figure 5.9, RL=120Ω or RL=54Ω Δ|VOD | 0.2 V | VOC | 3 V Δ|VOC | 0.2 V 200 mA 0 ≤ VTest ≤ 12 V mA −7V ≤ VTest ≤ 0V uA DE=0V, VTest=12V uA DE=0V, VTest=-7V uA DE=0V, VISOIN=0V, VTest=12V uA DE=0V, VISOIN=0V, VTest=-7V mV VCM=0V mV VCM=0V kΩ −7V ≤ VCM ≤ 12V, DE=0V Output Change in Magnitude of 3.3 Driver Short-Circuit Output Current Output Leakage Current (Y and Z) Full-Duplex IOSD IO -200 200 -200 Figure 5.9, RL=120Ω or RL =54Ω Figure 5.9, RL=120Ω or RL =54Ω Receiver Input Current (A and B) IA, IB Receiver Differential Threshold Voltage VTH Receiver Input Hysteresis ΔVTH Receiver Input Resistance RIN Copyright © 2023, NOVOSENSE 200 -200 -200 -125 15 96 -10 Page 9 NSiP83086 Datasheet (EN) 1.1 5.2. Switching Electrical Characteristics (VDD=3V~5.5V,VDDL=1.8~5.5V, Ta=-40℃ to 105℃. Unless otherwise noted, Typical values are at VDD=VDDL = 5V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments Driver Maximum Data Rate fMAX 16 Mbps tPLH 22 60 ns Figure 5.10,RL=54Ω, CL=50pF tPHL 21 60 ns Figure 5.10,RL=54Ω, CL=50pF tskew 1 8 ns Figure 5.10,RL=54Ω, CL=50pF tF 15 ns Figure 5.10,RL=54Ω, CL=50pF tR 15 ns Figure 5.10,RL=54Ω, CL=50pF Driver Propagation Delay Driver Pulse Width Distortion, |t PHL – t PLH | Driver Output Falling Time or Rising time Driver Enable to Output High tZH 22.8 50 ns Figure 5.11,RL=120Ω, CL=50pF Driver Enable to Output Low tZL 19.1 50 ns Figure 5.11,RL=120Ω, CL=50pF Driver Disable to Output High tHZ 28 50 ns Figure 5.11,RL=120Ω, CL=50pF Driver Disable to Output Low tLZ 27.1 50 ns Figure 5.11,RL=120Ω, CL=50pF Receiver Maximum Data Rate Receiver Propagation Delay Receiver Pulse Width Distortion, |t PHL – t PLH | Receiver Output Falling Time or Rising time fMAX 16 Mbps tPLH 65.8 140 ns Figure 5.12,CL=15pF tPHL 71.4 140 ns Figure 5.12, CL=15pF tskew 5.6 12 ns Figure 5.12,CL=15pF tF 15 ns Figure 5.12,CL=15pF tR 15 ns Figure 5.12, CL=15pF Receiver Enable to Output High tZH 6 15 ns Figure 5.13, RL=1kΩ,CL=15pF Receiver Enable to Output Low tZL 6 15 ns Figure 5.13, RL=1kΩ,CL=15pF Copyright © 2023, NOVOSENSE Page 10 NSiP83086 Datasheet (EN) 1.1 Receiver Disable to Output High tHZ 8 15 ns Figure 5.13, RL=1kΩ,CL=15pF Receiver Disable to Output Low tLZ 8 15 ns Figure 5.13, RL=1kΩ, CL=15pF 180 60 50 40 30 20 10 0 -40 160 70 140 60 RL=54Ω RL=120Ω No Load 150 120 50 120 40 100 3080 2060 90 54Ω 60 30 RL=54Ω RL=120Ω No Load Supply Current DD IDD(mA) (mA) SUPPLY CURRENT,I 70 SUPPLY CURRENT,IDD(mA) Supply Current IDD(mA) 5.3. Typical Performance Characteristics 120Ω -10 0 20 50 Temperature(℃) -40 -11 18 80 47 76 TEMPERATURE(℃) 105 1040 020 -40 0 -40 Figure 5.1 supply current vs Temperature 140 120 120 100 80 60 54Ω 120Ω -40 -10 20 50 80 Temperature(℃) Figure 5.3 supply current vs Temperature (Data Rate=16MHz,DE=VDDL,/RE=GND,VDD=5V,VISOOUT=5V) Copyright © 2023, NOVOSENSE Supply Current IDD(mA) Supply Current IDD(mA) 140 0 -10 -11 20 50 Temperature(℃) 18 47 TEMPERATURE(℃) 80 76 105 (Data Rate=500KHz,DE=VDDL,/RE=GND,VDD=5V,VISOOUT=3.3V) 160 20 120Ω Figure 5.2 supply current vs Temperature (Data Rate=16MHz,DE=VDDL,/RE=GND,VDD=5V,VISOOUT=3.3V) 40 54Ω 100 80 60 40 54Ω 120Ω 20 0 -40 -10 20 50 80 Temperature(℃) Figure 5.4 supply current vs Temperature (Data Rate=500KHz,DE=VDDL,/RE=GND,VDD=5V,VISOOUT=5V) Page 11 Datasheet (EN) 1.1 100 90 80 70 60 50 40 30 20 10 0 90 Supply Current IDD(mA) Supply Current IDD(mA) NSiP83086 54Ω 120Ω -40 -10 20 50 80 70 60 50 40 30 20 54Ω 10 120Ω 0 -40 80 -10 Figure 5.5 supply current vs Temperature (Data Rate=500KHz,DE=VDDL,/RE=GND,VDD=3.3V,VISOOUT=3.3V) Tplh 26 Tphl propagation delay (ns) propagation delay (ns) 28 24 22 20 18 16 14 18 47 80 Figure 5.6 supply current vs Temperature (Data Rate=16MHz,DE=VDDL,/RE=GND,VDD=3.3V,VISOOUT=3.3V) -11 50 Temperature(℃) Temperature(℃) -40 20 76 105 78 76 74 72 70 68 66 64 62 60 58 56 Tplh Tphl -40 -11 18 47 76 105 Temperature (℃) Temperature(℃) Figure 5.7 Driver Propagation Delay vs Temperature Figure 5.8 Receiver Propagation Delay vs Temperature 5.4. Parameter Measurement Information Figure 5.9 Driver DC Test Load Copyright © 2023, NOVOSENSE Page 12 NSiP83086 Datasheet (EN) 1.1 Y D V OD CL RL Z Figure 5.10 Driver Timing Test Circuit and waveform GND or VDD1 Y D OUT DE Z CL RL VDD2 50ohm Figure 5.11 Driver Enable Disable Timing Test Circuit and waveform A R OUT B RE 15pF Figure 5.12 Receiver Propagation Delay Test Circuit and waveform Copyright © 2023, NOVOSENSE Page 13 NSiP83086 Datasheet (EN) 1.1 +1.5V A -1.5V B R RE OUT RL 15pF VDD1 50ohm Figure 5.13 Receiver Enable Disable Timing Test Circuit and waveform GND1 GND2 VDD VISO R VOUT 15pF H/L /RE B D VDDL A DE GND1 GND2 Figure 5.14 Common-Mode Transient Immunity Test Circuit 6. High Voltage Feature Description 6.1. Insulation and Safety Related Specifications Parameters Minimum External Air Gap (Clearance) Minimum External Tracking (Creepage) Symbol Value Unit CLR 8.0 mm Shortest terminal-toterminal distance through air CPG 8.0 mm Shortest terminal-toterminal distance across the package surface 16 um Minimum internal gap (internal clearance – capacitive signal isolation) 100 um Minimum internal gap (internal clearance – transformer power isolation) >600 V DIN EN 60112 (VDE 0303-11); IEC 60112 Distance through the insulation DTI Tracking Resistance (Comparative Tracking Index) Material Group Copyright © 2023, NOVOSENSE CTI Comments I Page 14 NSiP83086 Datasheet (EN) 1.1 6.2. DIN VDE V 0884-11(VDE V 0884-11):2017-01 INSULATION CHARATERISTICS Description Test Condition Symbol Value Unit Installation Classification per DIN VDE 0110 For Rated Mains Voltage ≤ 150Vrms Ⅰto Ⅳ For Rated Mains Voltage ≤ 300Vrms Ⅰto Ⅳ For Rated Mains Voltage ≤ 600Vrms Ⅰto Ⅲ Climatic Classification 40/105/21 Pollution Degree per DIN VDE 0110, Table 1 2 Maximum repetitive peak isolation voltage Maximum working isolation voltage Input to Output Test Voltage, Method B1 VIORM 1166 VPEAK AC voltage(TDDB) test VIOWM 824 VRMS DC Voltage VIOWM 1166 VDC Vpd (m) 1749 VPEAK V IORM × 1. 5 = V pd (m), 100%production test, t ini = t m = 1 sec, partial discharge < 5 pC Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 V IORM × 1.2 = V pd (m), t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC Vpd (m) 1399 VPEAK After Input and /or Safety Test Subgroup 2 and Subgroup 3 V IORM × 1.2= V pd (m), t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC Vpd (m) 1399 VPEAK VIOTM 7000 VPEAK VIOSM 5384 VPEAK Maximum transient isolation voltage VTEST = VIOTM; t = 60 s (qualification); VTEST = 1.2 × VIOTM; t = 1 s (100% production) Maximum Surge Isolation Voltage Test method per IEC60065,1.2/50us waveform, VTEST = 1.3xVISOM Isolation resistance VIO =500V RIO >1012 Ω Isolation capacitance f = 1MHz CIO 0.6 pF Safety Power Dissipation for θJA = 68.5°C/W, V I = 5.5 V, T J = 125 °C, TA = 25 °C PS 1459 mW θJA = 68.5°C/W, V I = 5.5 V, T J = 125 °C, TA = 25 °C Is 265 mA SOW20 Package Safety input, output, or supply current for SOW20 Package Copyright © 2023, NOVOSENSE Page 15 NSiP83086 Datasheet (EN) 1.1 Safety Power Dissipation for SOW16 Package Safety input, output, or supply current for SOW16 Package θJA = 61°C/W, V I = 5.5 V, T J = 125 °C, TA = 25 °C PS 1639 mW θJA = 61°C/W, V I = 5.5 V, T J = 125 °C, TA = 25 °C IS 298 mA Ts 125 ℃ SAFTEY LIMITING CURRENT (MA) Safety Temperature 250 300 200 250 200 150 150 100 100 50 50 00 00 20 50 40 100 60 80 150 100 120 200 140 AMBIENT TEMPERATURE (℃) SAFTEY LIMITING CURRENT (MA) Figure 6.1NSiP83086 Thermal Derating Curve for SOW20 package, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 250 200 150 100 50 0 0 50 100 150 200 AMBIENT TEMPERATURE (℃) Figure 6.2NSiP83086 Thermal Derating Curve for SOW16 package, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Copyright © 2023, NOVOSENSE Page 16 NSiP83086 Datasheet (EN) 1.1 6.3. Regulatory Information The NSiP83086 are approved or pending approval by the organizations listed in table. CUL UL 1577 Component Recognition Program1 VDE CQC Approved under CSA Component Acceptance Notice 5A DIN VDE V 0884-11(VDE V 0884-11):2017-012 Certified by CQC11471543-2012 Single Protection, 5000VRMS Isolation voltage Single Protection, 5000VRMSIsolation voltage Basic Insulation 1166Vpeak, VIOSM=5384VPEAK Basic insulation File (pending) File (pending) File (pending) File (pending) GB4943.1-2022 7. Function Description NSiP83086 is a high reliability isolated full duplex RS-485 transceiver. Data isolation is achieved using Novosense integrated capacitive isolation that allows data transmission between the logic side and the Bus side. The 83086 series are safety certified by UL1577 supporting 5kVRMS insulation withstand voltage. 7.1. True Fail-Safe Receiver Inputs The devices feature fail-safe circuitry, which guarantees a logic-high receiver output when the receiver inputs are open or shorted. The receiver threshold is fixed between -10mV and -200mV, which meets EIA/TIA-485 standard. If the differential input voltage (VAVB) is greater than or equal to -10mV, receiver output R is logic high. In the case of a terminated bus with all transmitters disabled, the differential input voltage is pulled to zero by the termination resistors. Due to the receiver threshold, the receiver output R is logic high. Copyright © 2023, NOVOSENSE Page 17 NSiP83086 Datasheet (EN) 1.1 7.2. Truth Tables Table 7.1 Driver Function Table1 Input Enable Input Outputs (D) (DE) Y Z PU H H H L PU L H L H PU X L Z Z PU X OPEN Z Z PU OPEN H H L PD X X Z Z VDD1 status Table 7.2 Receiver Function Table1 Differential Input Enable Input Output (VA-VB) (/RE) (R) PU ≥-10mV L/Open H PU ≤-200mV L/Open L PU Open/Short L/Open H PU X H Z PU Idle L H PD X X Z VDD status 1 PD= Powered down; PU= Powered up; H= Logic High; L= Logic Low; X= Irrelevant; Z= High Impedance; 7.3. EMI Considerations NSIP83086 use a small on-chip transformer to provide power for RS485 Transceiver. The on-chip transformer operates at high frequency, which may degrade EMI performance, to achieve better EMI performance, special considerations must be taken during PCB layout. Please refer to the application note if needed. 7.4. Output Short and Over Temperature Protection The NSiP83086 series are protected against output short for VISOOUT. When short on VISOOUT occurs, the device will be in Hiccup mode and the power transferred will be limit, which will limit the temperature of the device to protect the device. The NSiP83086 series also protected against over temperature. When the chip is over 165℃, it will be shut down until the temperature of below 145℃. Copyright © 2023, NOVOSENSE Page 18 NSiP83086 Datasheet (EN) 1.1 8. Application Note 8.1. 256 Transceivers on the Bus The devices have a 1/8-unit-load receiver input impedance (96kΩ) that allows up to 256 transceivers on the bus. Connect any combination of these devices, and/or other RS-485 devices, for a maximum of 32 unit-loads to the line. 8.2. ESD Protection ESD protection structures are enhanced on all pins to protect against electrostatic discharge encountered during handing and assembly. The Bus pins have extra protection against static electricity to bus side (VISOOUT side). ESD protection can be tested in various ways. Below is the ESD spec of the devices. Bus pins:  ±8kV w.r.t to GND2 using the Contact Discharge method specified in IEC 61000-4-2 Other pins except bus pins:  ±7kV w.r.t to GND2 using the Contact Discharge method specified in IEC 61000-4-2 8.3. Layout Considerations The NSiP83086 requires a 10µF+0.1µF bypass capacitor between VDD1 and GND1, 10uF+0.1uF bypass capacitor between VISOOUT and GND2. The capacitor should be placed as close as possible to the package. To eliminate line reflections, each cable end (A-B, Y-Z) is terminated with a resistor, whose value matches the characteristic impedance of the cable(54Ω/120Ω). It’s good practice to place the bus connectors and termination resistor as close as possible to the A and B, Y and Z pins. 8.4. Typical Application GND1 MICROPROCESSOR AND UART VDD 1 VISOOUT GND2 R A /RE B DE Z D Y Figure 8.1 NSiP83086 in Half-Duplex RS-485 Mode Copyright © 2023, NOVOSENSE Page 19 NSiP83086 Datasheet (EN) 1.1 GND 1 MICROPROCESSOR AND UART VDD1 VISO OUT GND2 R A /RE B DE Z D Y Figure 8.2 NSiP83086 typical application circuit Figure 8.3 Typical isolated Full-Duplex RS-485 application Copyright © 2023, NOVOSENSE Page 20 NSiP83086 Datasheet (EN) 1.1 9. Package Information Figure 9.1 SOW20 Package Shape and Dimension in millimeters and inches Figure 9.2 SOW16 Package Shape and Dimension in millimeters Copyright © 2023, NOVOSENSE Page 21 NSiP83086 Datasheet (EN) 1.1 10. Ordering Information Part Number Isolation Rating (kVRMS) VISOOUT Duplex MSL Temperature No. of Nodes Package Type Package Drawing SPQ Full Max Data Rate (Mbps) 16 NSiP83086DSWTR NSiP83086CDSWTR NSiP83086VDSWTR NSiP83086DSWR NSiP83086VDSWR 5 5V 3 -40 to 105℃ 256 SOP20(300mil) SOW20 1000 5 5/3.3V Full 16 3 -40 to 105℃ 256 SOP20(300mil) SOW20 1000 5 3.3V Full 16 3 -40 to 105℃ 256 SOP20(300mil) SOW20 1000 5 5V Full 16 3 -40 to 105℃ 256 SOP16(300mil) SOW16 1000 5 3.3V Full 16 3 -40 to 105℃ 256 SOP16(300mil) SOW16 1000 NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifications and peak solder temperatures. 11. Documentation Support Part Number Product Folder Datasheet Application Note NSiP83086 tbd tbd tbd Copyright © 2023, NOVOSENSE Page 22 NSiP83086 Datasheet (EN) 1.1 12. Tape And Reel Information Figure 12.1 Tape and Reel Information of SOW20 Copyright © 2023, NOVOSENSE Page 23 NSiP83086 Datasheet (EN) 1.1 Figure 12.2 Tape and Reel Information of SOW16 Copyright © 2023, NOVOSENSE Page 24 NSiP83086 Datasheet (EN) 1.1 13. Revision History Revision 1.0 1.1 Description Initial Version Update Supply Current when VISOOUT = 3.3V and Corrected Some Mistakes Copyright © 2023, NOVOSENSE Date 2022/11/30 2023/5/29 Page 25 NSiP83086 Datasheet (EN) 1.1 IMPORTANT NOTICE The information given in this document shall in no event be regarded as any warranty or authorization of, express or implied, including but not limited to accuracy, completeness, merchantability, fitness for a particular purpose or infringement of any third party’s intellectual property rights. You are solely responsible for your use of Novosense’ products and applications, and for the safety thereof. You shall comply with all laws, regulations and requirements related to Novosense’s products and applications, although information or support related to any application may still be provided by Novosense. The resources are intended only for skilled developers designing with Novosense’ products. Novosense reserves the rights to make corrections, modifications, enhancements, improvements or other changes to the products and services provided. Novosense authorizes you to use these resources exclusively for the development of relevant applications designed to integrate Novosense’s products. Using these resources for any other purpose, or any unauthorized reproduction or display of these resources is strictly prohibited. Novosense shall not be liable for any claims, damages, costs, losses or liabilities arising out of the use of these resources. For further information on applications, products and technologies, please contact Novosense (www.novosns.com ). Suzhou Novosense Microelectronics Co., Ltd Copyright © 2023, NOVOSENSE Page 26
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