SM3416SRL

SM3416 N-Channel Enhancement-Mode MOSFET (20V,6.5A) PRODUCT SUMMARY VDSS 20V ID 6.5A RDS(on) (m-ohm) Max 22 @ VGS = 4.5V, ID=6.5A 26 @ VGS = 2.5V, ID=5.5A 34 @ VGS = 1.8V, ID=5.0A ◆ Features The SM3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD(2000V HBM) protected. SM3416 Pin Assignment & Symbol 3-Lead Plastic SOT-23-3L Pin1： ：Gate 2:Source 3:Drain ◆ Ordering Information Ordering Number Lead Free Halogen Free SM3416LRL SM3416LRG Pin Assignment Package 1 G SOT-23-3L SM3416-LR-G (1) L：SOT-23-3L (1)Package Type (2) R：Tape Reel (2)Packing Type 3 D Packing Tape Reel (3) G：Halogen Free；L：Lead Free (3)Lead Free V01 2 S 1 www.sourcechips.com SM3416 ◆ Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V TA=25°C 6.5 TA=75°C 5.2 ID Continuous Drain Current IDM Drain Current (Pulsed) PD Power Dissipation IS Maximum Body-Diode Continuous Current Tj, Tstg Note Parameter a A 30 TA=25°C 1.4 TA=75°C 0.9 Operating Junction and Storage Temperature Range b ：a. Repetitive Rating: Pulse width limited by the maximum junction temperature A W 1 A -55 to +150 °C b.1-in2 2oz Cu PCB board ◆ Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic • Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current • On Characteristicsc VGS(th) Gate Threshold Voltage Test Conditions VGS=0V, ID=250uA VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=VGS, ID=250uA VGS=4.5V, ID=6.5A Drain-Source On-State Resistance VGS=2.5V, ID=5.5A RDS(on) VGS=1.8V, ID=5.0A gFS Forward Transconductance VDS=5 V, ID=6.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current • Dynamic Characteristics d Ciss Input Capacitance VDS=10 VGS=0V, f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance • Switching Characteristicsd Qg Total Gate Charge VDS=10V ID=6.5 VGS=4.5V Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-on Delay Time VDD = 10V, RL = 1.5Ω tr Turn-on Rise Time ID = 1A, VGEN = 5V td(off) Turn-off Delay Time RG = 3Ω tf Turn-off Fall Time • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=1A ， ， c.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. V01 2 www.sourcechips.com Min. Typ. Max. Unit 20 - - 1 ±10 V uA uA V - 50 0.7 - 1 22 26 34 1 1 - 1160 104 29 - - 10 1.4 2.7 6.2 12.7 51.7 16 - - 0.7 1.2 0.4 - mΩ S V A pF nC nS V SM3416 ◆ Characteristics Curve（ （Ta=25℃ ℃,unless otherwise note） ） V01 3 www.sourcechips.com SM3416 ◆ Characteristics Curve（ （Ta=25℃ ℃,unless otherwise note） ） V01 4 www.sourcechips.com SM3416 ◆ Characteristics Curve（ （Ta=25℃ ℃,unless otherwise note） ） V01 5 www.sourcechips.com