CMD80P04L

CMD80P04L/CMU80P04L P-Channel 40-V (D-S) MOSFET General Description Product Summary These P-Channel enhancement mode power BVDSS RDSON ID -40V 9mΩ -80A field effect transistors use advanced trench technology and design to provide excellent Applications RDS(ON) . This device is suitable for use as DC-DC Converters a load switch or in PWM applications. Load Switches BLDC Motor driver Features TO-252 / 251 Pin Configuration Fast switching speed D D Lower On-resistance G 100% EAS Guaranteed G S Simple Drive Requirement TO-252 Absolute Maximum Ratings D S G TO-251 S Type Package Marking CMD80P04L TO-252 CMD80P04L CMU80P04L TO-251 CMU80P04L Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Sou ce Voltage ±20 V ID@TC=25℃ Continuous Drain Current -80 A IDM Pulsed Drain Current -240 A EAS Single Pulse Avalanche Energy 440 mJ Total Power Dissipation 75 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ PD@TC=25 Thermal Data Symbol CA03Q1 Parameter Typ. Max. Unit RθJA Junction-to-Ambient --- 62 ℃/W RθJC Junction-to-Case (Drain) --- 2.0 ℃/W www.cmosfet.com Page 1 of 2 CMD80P04L/CMU80P04L P-Channel 40-V (D-S) MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=-250uA -40 --- --- VGS=-10V , ID=-28A --- --- 9.0 VGS=-4.5V, ID=-25A --- --- 14.0 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA IDSS Drain-Source Leakage Current IGSS mΩ -1.0 --- -2.5 V VDS=-32V, VGS=0V , TJ=25℃ --- --- -1 uA Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5 V , ID=-20A --- 47 --- S VDS=0V , VGS=0V , f=1MHz --- 5.0 --- Ω --- 55 --- --- 21 --- --- 11 --- Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf VDD=-32V , ID=-70A VGS=-10V Turn-On Delay Time --- 20 --- Rise Time VDS =-20V, VGS=-10V , RG =3.5Ω --- 13 --- Turn-Off Delay Time ID=-73A --- 25 --- --- 30 --- Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-25V, VGS=0V , f=1MHz nC ns --- 6500 --- --- 1400 --- --- 40 --- Min. Typ. Max. Unit pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IF =-20A --- --- -80 A --- --- -240 A --- --- -1.2 V This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03Q1 www.cmosfet.com Page 2 of 2