CMD04N03

CMD04N03 / CMU04N03 30V N-Channel MOSFET General Description Product Summary The 04N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The 04N03L meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON 30V ID 4.1m 80A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Features Load Switch TO-252/251 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge D Excellent CdV/dt effect decline 100% EAS Guaranteed G Green Device Available S TO-252 (CMD04N03) Absolute Maximum Ratings G D S TO-251 (CMU04N03) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS ID@TC=25 ID@TC=100 IDM V 20 Gate-Sou ce Voltage Continuous Drain Current 1 80 A Continuous Drain Current 1 55 A 180 A Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 190 mJ IAS Avalanche Current 48 A Total Power Dissipation 70 W TSTG Storage Temperature Range -55 to 175 TJ Operating Junction Temperature Range -55 to 175 PD@TC=25 Thermal Data Symbol R R CA01P1 JA JC Parameter Typ. Thermal Resistance Junction-ambient 1 1 Thermal Resistance Junction -Case www.cmosfet.com Max. Unit --- 62 /W --- 2.8 /W Page 1 of 2 CMD04N03 / CMU04N03 30V N-Channel MOSFET Electrical Characteristics (TJ=25 Symbol BVDSS , unless otherwise noted) Parameter Conditions Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Max. Unit V VGS=0V , ID=250uA 30 --- --- VGS=10V , ID=40A --- 3.5 4.1 VGS=4.5V , ID=20A --- 5.1 6.4 VDS=VGS,ID=250μA 1 --- 3 1 m V VDS=24V , VGS=0V , TJ=25 --- VDS=24V , VGS=0V , TJ=125 --- --- 100 Gate-Source Leakage Current VGS --- --- 100 nA Forward Transconductance VDS=10V , ID=25A --- 22 --- S --- 1.5 --- --- 24 --- --- 10 --- Gate-Drain Charge --- 7.2 --- Turn-On Delay Time --- 9 --- Drain-Source Leakage Current IGSS gfs Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Typ. --- IDSS Td(on) Min. 20V , VDS=0V VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=40A uA nC Rise Time VDD=15V , VGS=10V , RG=3.3 --- 22 --- Turn-Off Delay Time ID=5A --- 28 --- Fall Time --- 18 --- Ciss Input Capacitance --- 3500 --- Coss Output Capacitance --- 650 --- Crss Reverse Transfer Capacitance --- 300 --- Min. Typ. Max. Unit --- --- 80 A --- --- 180 A --- --- 1.2 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions 1 Continuous Source Current 2 ISM Pulsed Source Current VSD Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=40 A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 300us , duty cycle 2% 2.The data tested by pulsed , pulse width 3.The EAS data shows Max. rating . The test condition is VDD =25V,VGS=10V,L=0.1mH,IAS=40A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2