DMZ1521E

DMZ1521E High-threshold Voltage Depletion-Mode Power MOSFET General Features         High-threshold voltage, its typical value as high as -6V ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available BVDSX RDS(ON) (Max.) IDSS,min 150V 15 Ω 200mA SOT-23 D Drain Applications       Source G Synchronous Rectification Normally-on Switches Linear Amplifier Converters Current Source Telecom Gate S Ordering Information Part Number Package Marking Remark DMZ1521E SOT-23 1521 Halogen Free Absolute Maximum Ratings Symbol VDSX VDGX TA=25℃ unless otherwise specified Parameter Drain-to-Source Voltage[1] Drain-to-Gate Voltage [1] DMZ1521E Unit 150 V 150 V ID Continuous Drain Current 0.2 IDM Pulsed Drain Current[2] 0.6 PD Power Dissipation 0.50 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range A ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1/6 DMZ1521E Unit 250 K/W Rev. 2.1 Jul. 2016 DMZ1521E Electrical Characteristics OFF Characteristics Symbol BVDSX TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ID(OFF) Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions 150 -- -- V VGS=-15V, ID=250µA -- -- 10 µA VDS=150V，VGS= -15V -- -- 1.0 mA VDS=150V，VGS= -15V TJ=125℃ -- -- 20 -- -- 20 ON Characteristics Symbol uA VGS=+20V, VDS=0V VGS=-20V, VDS=0V TA =25℃ unless otherwise specified Parameter Min. Typ. Max. Unit Test Conditions 200 -- -- mA VGS=0V, VDS=25V -- 10 15 Ω VGS=0V，ID=200mA [3] IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage -7 -- -5 V VDS =3V, ID=8µA gfs Forward Transconductance -- 0.24 -- S VDS =10V, ID=100mA Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 12.8 -- COSS Oput Capacitance -- 5.4 -- CRSS Reverse Transfer Capacitance -- 3.3 -- QG Total Gate Charge -- 3 -- QGS Gate-to-Source Charge -- 0.23 -- QGD Gate-to-Drain (Miller) Charge -- 1.1 -- Resistive Switching Characteristics Symbol td(ON) trise td(OFF) tfall Parameter Test Conditions pF VGS=-10V VDS=25V f=1.0MHZ nC VGS= -10V~0V VDS=75V, ID=200mA Essentially independent of operating temperature Min. Typ. Max. Turn-on Delay Time -- 7 -- Rise Time -- 16 -- Turn-off Delay Time -- 25 -- Fall Time -- 120 -- ARK Microelectronics Co., Ltd. Unit www.ark-micro.com 2/6 Unit Test Conditions ns VGS = -10V~0V VDD = 75V, ID=200mA RG = 20Ohm Rev. 2.1 Jul. 2016 DMZ1521E Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD =200 mA, VGS = -15 V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3/6 Rev. 2.1 Jul. 2016 DMZ1521E Figure 1. Maximum Power Dissipation vs. Case Temperature 0.6 0.25 0.20 ID, Drain Current (A) PD, Power Dissipation (W) 0.5 0.4 0.3 0.2 0.1 0 0.15 0.10 0.05 0.00 25 50 75 100 125 TC, Case Temperature (℃) 150 25 Figure 3. Typical Output Characteristics 50 75 100 125 TC, Case Temperature (℃) 150 Figure 4. Typical Transfer Characteristics 2 ID, Drain-to-Source Current (A) 0.5 VGS=-1V ID, Drain Current(A) Figure 2. Maximum Continuous Drain Current vs Case Temperature 1.6 VGS=-2V 1.2 VGS=-3V 0.8 VGS=-4V VGS=-5V 0.4 VGS=-6V 0 0 10 20 30 40 0.3 0.2 0.1 0 50 -10 -9 VDS, Drain-to-Source Voltage(V) ARK Microelectronics Co., Ltd. VDS=3V 0.4 -8 -7 -6 -5 -4 -3 -2 -1 VGS, Gate-to-Source Voltage(V) www.ark-micro.com 4/6 0 Rev. 2.1 Jul. 2016 DMZ1521E Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 5/6 Rev. 2.1 Jul. 2016 DMZ1521E Published by ARK Microelectronics Co., Ltd. ADD: 4F,D26,UESTC National Science Park No. 1 Shuangxing Avenue, Gongxing Street ,Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed. ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltd’s components. To minimize risk, customers must provide adequate design and operating safeguards. ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd’s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation. Resale of ARK Microelectronics Co., Ltd’s products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltd’s product or service and is unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements. Life Support Policy: ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructionsfor used provided in the labeling, can be reasonably expected to result in significantinjury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 6/6 Rev. 2.1 Jul. 2016