DMZ1520E

DMZ1520E Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ ESD Improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free Available RDS(ON) (Max.) IDSS (min) 150V 15 Ω 200mA SOT-23 D Drain Applications ➢ ➢ ➢ ➢ ➢ ➢ ➢ ➢ BVDSX New Energy Vehicles Industrial Automation Surge Protection Non-isolated Linear Power Supply Normally-on Switches Linear Amplifier Constant Current Source Telecom Source Gate G S Ordering Information Part Number Package Marking Remark DMZ1520E SOT-23 1520 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMZ1520E Unit VDSX Drain-to-Source Voltage[1] 150 V VDGX Drain-to-Gate Voltage[1] 150 V ID Continuous Drain Current 0.2 IDM Pulsed Drain Current[2] 0.6 PD Power Dissipation 0.50 W VGS Gate-to-Source Voltage VESD TL TJ and TSTG A ±20 V ESD[3] 1500 V Source to Gate ESD[3] 1500 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 Gate to Source Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /7 DMZ1520E Unit 250 K/W Rev. 1.0 Apr. 2022 DMZ1520E Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) IGSS TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Unit Test Conditions 150 -- -- V VGS=-10V, ID=250µA -- -- 10 µA VDS=150V，VGS=-10V -- -- 1.0 mA VDS=150V，VGS=-10V TJ=125℃ -- -- ±20 uA VGS=±20V, VDS=0V Drain-to-Source Leakage Current Gate-to-Source Leakage Current ON Characteristics Symbol IDSS TA =25℃ unless otherwise specified Parameter Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage gfs Forward Transconductance Min. Typ. Max. Unit Test Conditions 200 -- -- mA VGS=0V, VDS=25V -- 10 15 Ω VGS=0V, ID=100mA[4] -3.5 -- -5.5 V VDS=3V, ID=8µA -- 0.24 -- S VDS=10V, ID=100mA Min. Typ. Max. Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature CISS Input Capacitance -- 12.8 -- COSS Output Capacitance -- 5.4 -- CRSS Reverse Transfer Capacitance -- 3.3 -- QG Total Gate Charge -- 3 -- QGS Gate-to-Source Charge -- 0.23 -- QGD Gate-to-Drain (Miller) Charge -- 1.1 -- Resistive Switching Characteristics Symbol Parameter Test Conditions pF VGS=-10V VDS=25V f=1.0MHZ nC VGS=-10V~0V VDS=75V, ID=200mA Essentially independent of operating temperature Min. Typ. Max. td(on) Turn-on Delay Time -- 7 -- trise Rise Time -- 16 -- td(off) Turn-off Delay Time -- 25 -- Fall Time -- 120 -- tfall Unit Unit Test Conditions ns VGS=-10V~0V VDD=75V, ID=200mA RG=20Ohm Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD=200mA, VGS=-10V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3]The test is based on JEDEC EIA/JESD22-A114(HBM). [4] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2 /7 Rev. 1.0 Apr. 2022 DMZ1520E Typical Characteristics Figure 2. Maximum Continuous Drain Current vs. Case Temperature 0.6 0.25 0.5 ID，Drain Current(A) PD，Power Dissipation（W） Figure 1. Maximum Power Dissipation vs. Case Temperature 0.4 0.3 0.2 0.2 0.15 0.1 0.05 0.1 0 25 50 75 100 125 0 150 25 50 TC，Case Temperature(℃) Figure 3.Typical Output Characteristics 0.7 ID，Drain Current(A) ID，Dranin-to-Source Current(A) VGS=5V 0.5 VGS=0V 0.4 VGS=-0.5V 0.3 VGS=-1V 0.2 VGS=-1.5V VGS=-2V 0.1 VGS=-2.5V 0.0 0.0 10.0 20.0 30.0 40.0 VDS，Drain-to-Source Voltage(V) 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 VGS(OFF)，Gate-to-Source Cut-off Voltage ID，Dranin-to-Source Current(A） 1 0.1 0.01 0.001 10 VDS，Drain Voltage(V) ARK Microelectronics Co., Ltd. 125 150 VDS=30V VDS=15V VDS=9V VDS=3V -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 VGS，Gate-to-Source Voltage(V) 50.0 Figure 6. Typical Gate-to-Source Cut-off Voltage vs. Junction Temperature Figure 5. Maximum Rated Safe Operating Area 1 100 Figure 4. Typical Transfer Characteristics VGS=1V 0.6 75 TC，Case Temperature(℃) 100 1.20 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ，Junction Temperature(℃) www.ark-micro.com 3 /7 Rev. 1.0 Apr. 2022 DMZ1520E Typical Application In the application circuits of industrial automation, automotive electronics, and new energy, DMZ1520E can be used to power LDO. As shown in Figure 7, only one DMZ1520E is used in the circuit, which can convert the high input voltage into a stable low voltage to supply power to the LDO, and at the same time provide transient surge suppression for the LDO. The input voltage and output voltage of the LDO satisfy the relationship: Vs=Vout+|VGS(OFF)|. The circuit has a fast response speed, a simple structure, and can effectively save costs. Vin DMZ1520E D G S Vout Vs Figure 7. The Circuit of DMZ1520E to power supply for LDO Using the sub-threshold characteristics of the DMZ1520E, it can form a stable current source with the resistor R. Its basic application is shown in Figure 8: G Vin S D R DMZ1520E RL Figure 8. The Circuit of DMZ1520E and resistor form constant current source Using the sample with VGS(OFF)=-4.3V（@VDS=3V, IDS=8uA）to test according to the circuit shown in Figure 8, the result is shown in Figure 9： Figure 9.Typical Drain-to-Source Current vs. Input voltage IDS，Drain-to-Source Current(A) 1.8 1.6 1.4 1.2 1 0.8 0.6 TA=25℃ R=2KΩ RL=5KΩ 0.4 0.2 0 0 10 20 30 40 50 60 Vin，Input voltage ARK Microelectronics Co., Ltd. www.ark-micro.com 4 /7 Rev. 1.0 Apr. 2022 DMZ1520E In the Type-C/PD charger circuit, DMZ1520E and resistor R form a constant current source, which supplies stable power to InnoSwitch. The structure of the circuit is simple, and the DMZ1520E can also provide transient surge suppression for InnoSwitch. The circuit is shown in Figure 10: + DMZ1520E - R BPP InnoSwitch Figure 10. Constant current source circuit with DMZ1520E ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /7 Rev. 1.0 Apr. 2022 DMZ1520E Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /7 Rev. 1.0 Apr. 2022 DMZ1520E Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan.All All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /7 Rev. 1.0 Apr. 2022