AP30N10D

AP30N10D 100V N-Channel Enhancement Mode MOSFET Description The AP30N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 30A RDS(ON) < 47mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP30N10D TO-252-3L Marking Qty(PCS) AP30N10D XXX YYYY 2500 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol Parameter VDS Rating Units Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 30 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 13.5 A Continuous Drain Current, VGS @ 10V1 4.2 A Continuous Drain Current, VGS @ 10V1 3.4 A 45 A 36.5 mJ ID@TA=25℃ ID@TA=70℃ IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS Avalanche Current 27 A PD@TC=25℃ Total Power Dissipation4 52.1 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 62 ℃/W 2.4 ℃/W RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 Thermal Resistance 1 1 AP30N10D Rve3.8 臺灣永源微電子科技有限公司 AP30N10D 100V N-Channel Enhancement Mode MOSFET Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=20A --- 38 47 VGS=0V , ID=250uA RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS=4.5V , ID=15A --1.3 40 --- 50 2.5 mΩ V △VGS(th) VGS(th) Temperature Coefficient ----- -5.52 --- --10 mV/℃ IDSS Drain-Source Leakage Current VGS=VDS , ID =250uA VDS=80V , VGS=0V , TJ=25℃ VDS=80V , VGS=0V , TJ=55℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 28.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 3.2 Ω Qg Total Gate Charge (10V) --- 60 84 Qgs Gate-Source Charge --- 9.7 14 Qgd Gate-Drain Charge --- 11.8 16.5 Td(on) Turn-On Delay Time --- 10.4 21 Tr VDS=80V , VGS=10V , ID=20A uA nC Rise Time VDD=50V , VGS=10V , RG=3.3 --- 46 83 Turn-Off Delay Time ID=20A --- 54 108 Fall Time --- 10 20 Ciss Input Capacitance --- 3848 5387 Coss Output Capacitance --- 137 192 Crss Reverse Transfer Capacitance --- 82 115 IS Continuous Source Current1,5 --- --- 22 A --- --- 45 A Td(off) Tf Current2,5 VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current ns pF ISM Pulsed Source VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time --- 30 --- nS Qrr Reverse Recovery Charge IF=20A , dI/dt=100A/µs , TJ=25℃ --- 37 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=27A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP30N10D Rve3.8 臺灣永源微電子科技有限公司 AP30N10D 100V N-Channel Enhancement Mode MOSFET Typical Characteristics 37.0 55 ID= 1 2 A VGS=10V 44 36.5 RD S O N( m Ω ) ID Drain Current (A) VGS=7V VGS=5V 33 36.0 VGS=4.5V 35.5 22 35.0 VGS=3V 11 34.5 0 0 1 2 3 4 5 VDS , Drain-to-Source Voltage (V) 34.0 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 12 IS Source Current(A) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 Normalized On Resistance VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse diode 2.5 1.8 2.0 1.4 Normalized VGS(th) (V) Fig.4 Gate-Charge Characteristics 1.5 1 0.6 1.0 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) 0.5 -50 0 50 100 150 TJ , J u n c t i o n T e m p℃) e ra ture ( Fig.6 Normalized RDSON vs. TJ 臺灣永源微電子科技有限公司 3 Fig.5 Normalized VGS(th) vs. TJ AP30N10D Rve3.8 150 AP30N10D 100V N-Channel Enhancement Mode MOSFET 10000 100.00 F=1.0MHz 100us 10.00 1000 1ms -ID (A) Capacitance (pF) Ciss 10ms 100ms DC 1.00 Coss 100 Crss 0.10 Tc=25o C Single Pulse 10 1 5 9 13 17 21 25 0.01 0.1 VDS , Drain to Source Voltage (V) Fig.7 Capacitance 1 10 100 -VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff AP30N10D Rve3.8 4 Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform 臺灣永源微電子科技有限公司 AP30N10D 100V N-Channel Enhancement Mode MOSFET Package Mechanical Data E Dimensions A B2 Ref. C2 Millimeters L V1 Min. 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 Min. D H C B DETAIL A V1 V2 D1 5.30REF D1 G A2 V1 Max. 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.176 7° V2 0.268 0.182 V1 L2 Typ. Max. 2.10 A E1 Typ. Inches 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B 0 P0 P2 Dimensions T Ref. E D A B0 A D1 W F t1 K0 P1 A0 B B B 5° 29 Φ3 A A 20 Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP30N10D Rve3.8 臺灣永源微電子科技有限公司 AP30N10D 100V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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