650V/8A, SiC Schottky Barrier Diode
H4D065A008, H4D065T008, H4D065U008 Datasheet
Product Summary
H4D065A008,
H4D065T008, H4D065U008
VR
650V
IF(110/140°C) 11A/8A
QC
15nC
Features
◼
◼
◼
◼
◼
◼
◼
◼
Circuit Diagram
Low Conduction and Switching Loss
Zero Reverse Recovery
Temperature Independent Switching Behavior
Positive Temperature Coefficient Device
High Surge Current Capability
Suitable for High Speed Application
AEC-Q101 Qualified
RoHS Compliant and Halogen Free
K
A
K
A
K
TO-263-2L
Benefits
◼
◼
◼
◼
◼
◼
TO-220-2L
Higher System Efficiency
Increase Parallel Device Convenience
Enable High Temperature Application
Allow High Frequency Operation
Realize Compact and Lightweight Systems
High Reliability
K
TO-263-2L-1NC
K
A
A
K
NC
Applications
Part Number
Package
Marking
◼
◼
◼
◼
◼
◼
H4D065A008
TO-220-2L
H4D065A008
H4D065T008
TO-263-2L
H4D065T008
H4D065U008
TO-263-2L-1NC
H4D065U008
Switching Mode Power Supply
PFC
UPS
Motor Drives
Flywheel diode in Power Inverters
Solar/Wind Renewable Energy
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
c
Parameter
Symbol
Test Conditions
Value
Unit
Peak Repetitive Reverse Voltage
Peak Reverse Surge Voltage
DC Blocking Voltage
VRRM
VRSM
VR
IF
Non-Repetitive Peak Forward
Surge Current
IFSM
650
650
650
18
11
8
38
36
295
V
V
V
Continuous Forward Current
Repetitive Peak Forward Surge
Current
IFRM
Power Dissipation
PD
I2t
∫i2dt
TJ = 25°C
TJ = 25°C
TJ = 25°C
TC = 25°C
TC = 110°C
TC = 140°C
TC = 25°C, TP = 10 ms, Half Sine Wave
TC = 125°C, TP = 10 ms, Half Sine Wave
TC = 25°C, TP = 10 μs, Pulse
TC = 25°C, TP = 10 ms
Half Sine Wave, D = 0.1
TC = 125°C, TP = 10 ms
Half Sine Wave, D = 0.1
TC = 25°C
TC = 125°C
TC = 25°C, TP = 10 ms
value
Junction & Storage Temperature
Soldering Temperature
Mounting Torque
Rev. Preliminary 0.1
Mar. 2022
Tj , Tstg
TL
MD
M3 or 6-32 screw
1
A
A
35
A
22
65
21
7
-55 to 175
260
1.0
W
A2s
°C
Nm
650V/8A, SiC Schottky Barrier Diode
H4D065A008, H4D065T008, H4D065U008 Datasheet
Electrical Characteristics (T = 25°C unless otherwise specified)
c
Parameter
Symbol
Test Conditions
DC Blocking Voltage
VDC
Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Total Capacitance
Cj
Capacitance Stored Energy
EC
IR = 100 μA, TJ = 25°C
IF = 8A, TJ = 25°C
IF = 8A, TJ = 175°C
VR = 650V, TJ = 25°C
VR = 650V, TJ = 175°C
VR = 400V, TJ=25°C
VR = 1V, TJ=25°C, f =1 MHz
VR = 300V, TJ=25°C, f =1 MHz
VR = 600V, TJ=25°C, f =1 MHz
VR = 400V
Min.
> 650
Typ.
Max.
1.45
1.85
3
160
15
247
25
24
3.0
1.7
2.1
40
Unit
V
V
V
μA
μA
nC
pF
μJ
Thermal Resistance
Parameter
Symbol
Thermal Resistance, Junction to Case
Rθ,JC
Naming Rule
Min.
Typ.
Max.
2.3
H4 D 065 A 008
Generation
H4 = 4th Gen Discrete
Device Type
S = JBS diode (High Power)
D = JBS diode (High Speed)
Breakdown Voltage
065 = 650V
120 = 1200V
170 = 1700V
Package Type
A = TO-220-2L T = TO-263-2L U = TO-263-2L-1NC
Typical Current Rating
004 = 4A
006 = 6A
008 = 8A
010 = 10A
015 = 15A
020 = 20A
Recommended Solder Pad Layout
TO-220-2L
Rev. Preliminary 0.1
Mar. 2022
TO-263-2L, TO-263-2L-1NC
2
Unit
°C/W
650V/8A, SiC Schottky Barrier Diode
H4D065A008, H4D065T008, H4D065U008 Datasheet
Typical Device Performance
5.E-04
16
Tj=25°C
Tj=25°C
Tj=75°C
Reverse Current, IR (A)
Forward Current, IF (A)
Tj=75°C
4.E-04
Tj=125°C
12
Tj=175°C
8
4
0
Tj=125°C
Tj=175°C
3.E-04
2.E-04
1.E-04
0.E+00
0
0.5
1
1.5
2
2.5
3
3.5
0
150
Forward Voltage, VF (V)
Fig.1
Forward Characteristics
Fig.2
Cj Stored Energy, EC (J)
Capacitance, Cj (F)
450
600
750
900
Reverse Characteristics
8.E-06
1.E-09
1.E-10
Conditions:
Tc=25°C
VAC=25mV
f: 1MHz
1.E-11
6.E-06
4.E-06
Conditions:
Tc=25°C
VAC=25mV
f: 1MHz
2.E-06
0.E+00
0.1
1
10
100
1000
0
150
Reverse Voltage, VR (V)
Fig.3
300
Reverse Voltage, VR (V)
300
450
600
Reverse Voltage, VR (V)
Junction Capacitance vs. Reverse Voltage
Fig.4
Capacitance Stored Energy
Non-Repetitive Surge Current, IFSM
(A)
Cj Capacitive Charge, QC (C)
2.4E-08
1.8E-08
25°C
125°C
1.E+03
1.2E-08
1.E+02
Conditions:
Tc=25°C
VAC=25mV
f: 1MHz
6.0E-09
1.E+01
1.E-06
0.0E+00
0
150
300
450
600
Reverse Voltage, VR (V)
Fig.5
Recovery Charge vs. Reverse Voltage
Rev. Preliminary 0.1
Mar. 2022
Conditions:
Tc=25°C
1.E-05
1.E-04
Pulse Width, TP (sec)
Fig.6
3
Non-Repetitive Peak Forward Surge
Current (Pulse Mode)
1.E-03
650V/8A, SiC Schottky Barrier Diode
H4D065A008, H4D065T008, H4D065U008 Datasheet
Typical Device Performance
70
70
DC
Max Power Dissipation, PD (W)
Peak Forward Current, IF (A)
DC
Duty=70%
60
Duty=50%
Duty=30%
50
Duty=20%
40
Duty=10%
30
20
10
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0
Case Temperature, Tc (°C)
Thermal Impedance, Zth(j-c) (K/W)
Fig.7
25
50
75
100
125
150
175
Case Temperature, Tc (°C)
Maximum Forward Current Derating vs.
Case Temperature
Fig.8
Maximum Power Dissipation Derating vs.
Case Temperature
1.E+00
D=0.8
D=0.5
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
Single Pusle
1.E-01
1.E-02
1.E-03
1.E-04
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
Pulse time, tPW (sec)
Fig.9
Transient Junction to Case Thermal Impedance
The information provided herein is subject to change without notice.
Rev. Preliminary 0.1
Mar. 2022
4
1.E-01
1.E+00
1.E+01
650V/8A, SiC Schottky Barrier Diode
H4D065A008, H4D065T008, H4D065U008 Datasheet
Package Dimensions (TO-220-2L)
Symbol
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E3*
e
e1
H1
L
L1
𝝓P
Q
Q1*
R*
Min.
4.24
1.15
2.30
0.70
1.20
1.20
0.40
14.70
8.82
12.63
9.96
6.86
6.30
13.47
3.60
3.75
2.60
mm
Typ.
4.44
1.27
2.48
0.80
1.55
1.45
0.50
15.37
8.92
12.73
10.16
7.77
8.70 REF
2.54 BSC
5.08 BSC
6.45
13.72
3.80
3.84
2.80
1.73 REF
1.82 REF
Max.
4.64
1.40
2.70
0.90
1.75
1.70
0.60
16.00
9.02
12.83
10.36
8.89
6.60
13.97
4.00
3.93
3.00
Package Dimensions (TO-263-2L, TO-263-2L-1NC)
Symbol
A
A1
b
b1
b2
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Q
Rev. Preliminary 0.1
Mar. 2022
5
Min.
4.24
0.00
0.70
1.20
1.20
0.40
1.15
8.82
6.86
9.96
6.89
mm
Typ.
Max.
4.44
4.64
0.10
0.25
0.80
0.90
1.55
1.75
1.45
1.70
0.50
0.60
1.27
1.40
8.92
9.02
7.65
--10.16
10.36
7.77
7.89
2.54 BSC
5.08 BSC
14.61
15.00
15.88
1.78
2.32
2.79
1.36 REF
0.00 REF (TO-263-2L)
1.50 REF (TO-263-2L-1NC)
0.25 BSC
2.30
2.48
2.70