H3D065A008

650V/8A, SiC Schottky Barrier Diode H3D065A008, H3D065T008, H3D065U008 Datasheet Product Summary H3D065A008, H3D065T008, H3D065U008 VR 650V IF(110/146°C) 13A/8A QC 15nC Features ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Circuit Diagram Low Conduction and Switching Loss Zero Reverse Recovery Temperature Independent Switching Behavior Positive Temperature Coefficient Device High Surge Current Capability Suitable for High Speed Application AEC-Q101 Qualified RoHS Compliant and Halogen Free K A K A K TO-263-2L Benefits ◼ ◼ ◼ ◼ ◼ ◼ TO-220-2L Higher System Efficiency Increase Parallel Device Convenience Enable High Temperature Application Allow High Frequency Operation Realize Compact and Lightweight Systems High Reliability K TO-263-2L-1NC K A A K NC Applications Part Number Package Marking ◼ ◼ ◼ ◼ ◼ ◼ H3D065A008 TO-220-2L H3D065A008 H3D065T008 TO-263-2L H3D065T008 H3D065U008 TO-263-2L-1NC H3D065U008 Switching Mode Power Supply PFC UPS Motor Drives Flywheel diode in Power Inverters Solar/Wind Renewable Energy Absolute Maximum Ratings (T = 25°C unless otherwise specified) c Parameter Symbol Test Conditions Value Unit Peak Repetitive Reverse Voltage Peak Reverse Surge Voltage DC Blocking Voltage VRRM VRSM VR IF Non-Repetitive Peak Forward Surge Current IFSM 650 650 650 21 13 8 51 44 324 V V V Continuous Forward Current Repetitive Peak Forward Surge Current IFRM Power Dissipation PD I2t ∫i2dt TJ = 25°C TJ = 25°C TJ = 25°C TC = 25°C TC = 110°C TC = 146°C TC = 25°C, TP = 10 ms, Half Sine Wave TC = 125°C, TP = 10 ms, Half Sine Wave TC = 25°C, TP = 10 μs, Pulse TC = 25°C, TP = 10 ms Half Sine Wave, D = 0.1 TC = 125°C, TP = 10 ms Half Sine Wave, D = 0.1 TC = 25°C TC = 125°C TC = 25°C, TP = 10 ms value Junction & Storage Temperature Soldering Temperature Mounting Torque Rev. 1.1 Mar. 2021 Tj , Tstg TL MD M3 or 6-32 screw 1 A A 40 A 36 77 25.5 13 -55 to 175 260 1.0 W A2s °C Nm www.hestia-power.com 650V/8A, SiC Schottky Barrier Diode H3D065A008, H3D065T008, H3D065U008 Datasheet Electrical Characteristics (T = 25°C unless otherwise specified) c Parameter Symbol Test Conditions DC Blocking Voltage VDC Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Total Capacitance Cj Capacitance Stored Energy EC IR = 100 μA, TJ = 25°C IF = 8A, TJ = 25°C IF = 8A, TJ = 175°C VR = 650V, TJ = 25°C VR = 650V, TJ = 175°C IF = 8A, dI/dt=300A/μs, VR = 400V, TJ=25°C VR = 1V, TJ=25°C, f =1 MHz VR = 300V, TJ=25°C, f =1 MHz VR = 600V, TJ=25°C, f =1 MHz VR = 400V Min. > 650 Typ. Max. 1.5 1.8 1.5 16 1.8 2.1 60 240 15 Unit V V V μA μA nC 289 30 28 2.8 pF μJ Thermal Resistance Parameter Symbol Thermal Resistance, Junction to Case Rθ,JC Naming Rule Min. Typ. Max. Unit °C/W 1.95 H3 D 065 A 008 Generation H3 = 3rd Gen Discrete Device Type S = JBS diode (High Power) D = JBS diode (High Speed) Breakdown Voltage 065 = 650V 120 = 1200V 170 = 1700V Package Type A = TO-220-2L T = TO-263-2L U = TO-263-2L-1NC Typical Current Rating 004 = 4A 006 = 6A 008 = 8A 010 = 10A 015 = 15A 020 = 20A Recommended Solder Pad Layout TO-220-2L Rev. 1.1 Mar. 2021 TO-263-2L, TO-263-2L-1NC 2 www.hestia-power.com 650V/8A, SiC Schottky Barrier Diode H3D065A008, H3D065T008, H3D065U008 Datasheet Typical Device Performance 5.E-04 16 Tj=25°C Tj=25°C Tj=75°C Reverse Current, IR (A) Forward Current, IF (A) Tj=75°C 4.E-04 Tj=125°C 12 Tj=175°C 8 4 0 Tj=125°C Tj=175°C 3.E-04 2.E-04 1.E-04 0.E+00 0 0.5 1 1.5 2 2.5 3 0 300 Forward Voltage, VF (V) Fig.1 Forward Characteristics Fig.2 Cj Stored Energy, EC (J) Capacitance, Cj (F) 1.E-09 1.E-10 Conditions: Tc=25°C VAC=25mV f: 1MHz 1.E-11 Reverse Characteristics 6.E-06 4.E-06 Conditions: Tc=25°C VAC=25mV f: 1MHz 2.E-06 0.E+00 0.1 1 10 100 1000 0 150 Reverse Voltage, VR (V) 300 450 600 Reverse Voltage, VR (V) Junction Capacitance vs. Reverse Voltage Fig.4 Capacitance Stored Energy 1.E+03 Non-Repetitive Surge Current, IFSM (A) 3.E-08 Cj Capacitive Charge, QC (C) 900 8.E-06 1.E-08 Fig.3 600 Reverse Voltage, VR (V) 2.E-08 25°C 125°C 1.E+02 1.E-08 Conditions: Tc=25°C VAC=25mV f: 1MHz 1.E+01 1.E-06 0.E+00 0 150 300 450 600 Reverse Voltage, VR (V) Fig.5 Rev. 1.1 Mar. 2021 Recovery Charge vs. Reverse Voltage Conditions: Tc=25°C 1.E-05 1.E-04 1.E-03 Pulse Width, TP (sec) Fig.6 3 Non-Repetitive Peak Forward Surge Current (Pulse Mode) www.hestia-power.com 650V/8A, SiC Schottky Barrier Diode H3D065A008, H3D065T008, H3D065U008 Datasheet Typical Device Performance 75 320 DC DC Max Power Dissipation, PD (W) Peak Forward Current, IF (A) Duty=70% Duty=50% Duty=30% 50 Duty=20% Duty=10% 25 Duty=70% Duty=50% 240 Duty=30% Duty=20% Duty=10% 160 0 80 0 0 25 50 75 100 125 150 175 0 Case Temperature, Tc (°C) Thermal Impedance, Zth(j-c) (K/W) Fig.7 25 50 75 100 125 150 175 Case Temperature, Tc (°C) Maximum Forward Current Derating vs. Case Temperature Fig.8 Maximum Power Dissipation Derating vs. Case Temperature 1.E+00 D=0.8 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pusle 1.E-01 1.E-02 1.E-03 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Pulse time, tPW (sec) Fig.9 Transient Junction to Case Thermal Impedance The information provided herein is subject to change without notice. Rev. 1.1 Mar. 2021 4 www.hestia-power.com 650V/8A, SiC Schottky Barrier Diode H3D065A008, H3D065T008, H3D065U008 Datasheet Package Dimensions (TO-220-2L) Symbol A A1 A2 b b1 b2 c D D1 D2 E E1 E3* e e1 H1 L L1 𝝓P Q Q1* R* Min. 4.24 1.15 2.30 0.70 1.20 1.20 0.40 14.70 8.82 12.63 9.96 6.86 6.30 13.47 3.60 3.75 2.60 mm Typ. 4.44 1.27 2.48 0.80 1.55 1.45 0.50 15.37 8.92 12.73 10.16 7.77 8.70 REF 2.54 BSC 5.08 BSC 6.45 13.72 3.80 3.84 2.80 1.73 REF 1.82 REF Max. 4.64 1.40 2.70 0.90 1.75 1.70 0.60 16.00 9.02 12.83 10.36 8.89 6.60 13.97 4.00 3.93 3.00 Package Dimensions (TO-263-2L, TO-263-2L-1NC) Symbol A A1 b b1 b2 c c2 D D1 E E1 e e1 H L L1 L2 L3 Q Rev. 1.1 Mar. 2021 5 Min. mm Typ. Max. 4.24 0.00 0.70 1.20 1.20 0.40 1.15 8.82 6.86 9.96 6.89 4.44 4.64 0.10 0.25 0.80 0.90 1.55 1.75 1.45 1.70 0.50 0.60 1.27 1.40 8.92 9.02 7.65 --10.16 10.36 7.77 7.89 2.54 BSC 5.08 BSC 14.61 15.00 15.88 1.78 2.32 2.79 1.36 REF 0.00 REF (TO-263-2L) 1.50 REF (TO-263-2L-1NC) 0.25 BSC 2.30 2.48 2.70 www.hestia-power.com