HSS06P03

HSS06P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS06P03 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS06P03 meet the RoHS and Green Product requirement, with full function reliability approved. VDS -30 V RDS(ON),max 28 mΩ ID -6 A ⚫ ⚫ ⚫ ⚫ SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ -6 A Current2 -24 A Dissipation3 1.25 W Pulsed Drain Total Power -10V1 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 1 Typ. Max. Unit --- 100 ℃/W --- 80 ℃/W 1 HSS06P03 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V , ID=-4.2A --- 23 28 VGS=-4.5V , ID=-4A --- 30 36 VGS=-2.5V , ID=-1A --- 38 48 -1 -1.5 -2 V --- 4 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=±20V , VDS=0V --- --- ±100 --- 24.1 --- --- 3.8 --- --- 4.2 --- VGS=VDS , ID =-250uA VDS=-15V , VGS=-10V , ID=-1A m uA nA nC --- 48 --- Rise Time VDD=-15V , VGS=-4.5V , RG=10, --- 3.2 --- Turn-Off Delay Time RL=15, ID=-1A --- 18 --- Fall Time --- 9 --- Ciss Input Capacitance --- 1181 --- Coss Output Capacitance --- 143 --- Crss Reverse Transfer Capacitance --- 102 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -6 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,4 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS06P03 P-Ch 30V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSS06P03 P-Ch 30V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSS06P03 P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSS06P03 www.hs-semi.cn Package code SOT-23L Ver 2.0 Packaging 3000/Tape&Reel 5