TSI20H200CW

TSI20H100CW – TSI20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 20 A VRRM 100 - 200 V IFSM 150 A TJ MAX 150 °C 2 Package TO-262 (I PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-262 (I PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.60g (approximately) 2 TO-262 (I PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM TSI20H 100CW TSI20H 100CW 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage TSI20H 120CW TSI20H 120CW 120 TSI20H 150CW TSI20H 150CW 150 84 105 TSI20H UNIT 200CW TSI20H 200CW 200 V 140 V IF 20 A IFSM 150 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: E2104 TSI20H100CW – TSI20H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 3.8 °C/W Junction-to-case thermal resistance RӨJC 2.8 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.57 - V 0.62 - V 0.72 - V TSI20H200CW 0.77 - V TSI20H100CW 0.67 0.79 V 0.78 0.87 V 0.81 0.90 V 0.83 0.93 V 0.50 - V 0.53 - V 0.58 - V TSI20H200CW 0.62 - V TSI20H100CW 0.59 0.68 V 0.63 0.72 V 0.66 0.75 V 0.68 0.78 V - 200 µA - 100 µA - 25 mA - 15 mA TSI20H100CW TSI20H120CW TSI20H150CW TSI20H120CW TSI20H150CW Forward voltage per diode (1) IF = 10A, TJ = 25°C TSI20H200CW VF TSI20H100CW TSI20H120CW TSI20H150CW TSI20H120CW TSI20H150CW Reverse current @ rated VR (2) per diode IF = 5A, TJ = 25°C TSI20H200CW TSI20H100CW TSI20H120CW TSI20H150CW TSI20H200CW TSI20H100CW TSI20H120CW TSI20H150CW TSI20H200CW IF = 5A, TJ = 125°C IF = 10A, TJ = 125°C TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) TSI20HxCW PACKAGE 2 TO-262 (I PAK) PACKING 50 / Tube Notes: 1. "x" defines voltage from 100V (TSI20H100CW) to 200V (TSI20H200CW) 2 Version: E2104 TSI20H100CW – TSI20H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TSI20H100CW 20 CAPACITANCE (pF) 15 10 1000 TSI20H120CW TSI20H150CW 100 TSI20H200CW 5 f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 10010 TSI20H100CW 10 UF1DLW 1 0.1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.01 0.1 0.001 0.1 0.3 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSI20H120CW TJ=150°C 1 TJ=125°C TJ=100°C 0.01 0.001 TJ=25°C 10 20 30 40 50 60 70 80 90 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 0.0001 0.5 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 0.1 TJ=25°C TJ=100°C 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics TSI20H100CW 10 (A) 25 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10010 TSI20H120CW 10 UF1DLW 1 0.1 TJ=150°C TJ=125°C TJ=125°C TJ=100°C 1 TJ=25°C 0.01 0.1 0.1 0.001 0.3 TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 25 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 FORWARD VOLTAGE (V) 3 Version: E2104 TSI20H100CW – TSI20H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TSI20H150CW 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=100°C 1 0.01 0.1 0.001 0.1 0.3 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSI20H200CW TJ=150°C TJ=125°C 0.01 TJ=100°C 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 1.1 1.2 1.1 1.2 Fig.10 Typical Forward Characteristics 10 0.1 0.5 FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics 1 TJ=25°C TJ=125°C 0.1 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 TSI20H200CW 10 1 0.1 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=100°C 1 0.01 0.1 0.001 0.1 0.3 TJ=25°C (A) TSI20H150CW (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1.1 1 FORWARD VOLTAGE (V) 4 Version: E2104 TSI20H100CW – TSI20H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-262 (I PAK) MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: E2104 TSI20H100CW – TSI20H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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