WP2806008UH

WP2806008UH(S) Unmatched GaN HEMT Product Features Applications • Up to 6GHz Operation • Broadband Amplifiers • 14dB Small Signal Gain at 4.7GHz • Cellular Infrastructure • 11.7 W Typical PSAT at 4.7GHz • Test Instrumentation • 61% Efficiency at PSAT at 4.7GHz • WiMAX, LTE, WCDMA, GSM • 28V Operation • Radar Application Package Type: 360BH Absolute Maximum Rating Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 160 Volts 25˚C Gate-to-Source Voltage3 VGS -10, +2 Volts 25˚C Storage Temperature3 TSTG -65, +150 ˚C Operating Junction Temperature1,3 TJ 225 ˚C Maximum Forward Gate Current3 IGMAX 30 mA 25˚C Maximum Drain Current2 IDMAX 1 A Id@ Vd =10V, Vg= 1V Soldering Temperature3 TS 245 ˚C 1. 2. 3. Continuous use at maximum temperature will affect MTTF. Current limit for long term, reliable operation. After additional updates. DC Characteristics1 (TA=25˚C) Parameter Symbol MIN TYP MAX Units Conditions Gate Threshold Voltage VGS(th) -3.1 VDC VDS = 10V, ID = 1mA Gate Quiescent Voltage VGS(Q) -2.23 VDC VDS = 28V, ID = 70mA Saturated Drain Current2 IDS 1000 mA/mm VDS = 10V, VGS = 1V Drain-Source Breakdown Voltage VBR VDC ID = 1 mA/mm 160 1. Measured on wafer prior to packaging. 2. Scaled from PCM data. RF Characteristics (TA=25˚C, F0=4.6GHz, Unless otherwise noted) Parameter Symbol MIN TYP MAX Units Conditions Power Gain GSS 11 dB VDD = 28V, IDQ = 70mA, Pulse Width = 100usec, Duty Cycle = 10% Output Power POUT 6 W VDD = 28V, IDQ = 70mA, Pulse Width = 100usec, Duty Cycle = 10% Saturated Output Power PSAT 11.6 W VDD = 28V, IDQ = 70mA, Pulse Width = 100usec, Duty Cycle = 10% Pulsed Drain Efficiency1 n 58 % VDD = 28V, IDQ = 70mA, Pulse Width = 100usec, Duty Cycle = 10% @ PSAT Output Mismatch Stress VSWR 10:1 No damage at all phase angles, VDD = 28V, IDQ = 70mA, POUT = 1 WCW 1. Drain Efficiency = POUT / PDC All specifications may change without notice. Version 2.0 1 WAVEPIA Co., LTD. sales@wavepia.com http://www.wavepia.com WP2806008UH(S) Unmatched GaN HEMT Pulse Signal Performance (TA=25℃, Measured in the test board amplifier circuit) VDD=28V, IDQ=70mA, Pulse Width=100μsec, Duty Cycle=10% All specifications may change without notice. Version 2.0 2 WAVEPIA Co., LTD. sales@wavepia.com http://www.wavepia.com WP2806008UH(S) Unmatched GaN HEMT Small Signal Performance (TA=25℃, Measured in the test board amplifier circuit) VDD=28V, IDQ=70mA All specifications may change without notice. Version 2.0 3 WAVEPIA Co., LTD. sales@wavepia.com http://www.wavepia.com WP2806008UH(S) Unmatched GaN HEMT Evaluation Board Reference Number Value Items Package Manufacturer C2 0.3 pF High Q Capacitor 0805 Johanson C3 2.2 pF High Q Capacitor 0603 Johanson C4 0.5 pF High Q Capacitor 0603 Johanson C5 10 pF High Q Capacitor 0603 Johanson C6, C7 220 pF High Q Capacitor 0805 Johanson C8 1 nF High Q Capacitor 0805 Johanson C9 1 uF High Q Capacitor 0805 Johanson C10 10 uF Tantalum Capacitor B Vishay C11 1.5 pF High Q Capacitor CHA Temex C12 3 pF High Q Capacitor CHA Temex C13 15 pF High Q Capacitor CHA Temex C14 100 pF High Q Capacitor CHA Temex C1 220 nF High Voltage Capacitor 3225 Johanson Dielectrics C15 470 nF High Voltage Capacitor 4532 Johanson Dielectrics R1 300 ohm Chip Resistor 0603 Samsung R2 11 ohm Chip Resistor 0603 Samsung All specifications may change without notice. Version 2.0 4 WAVEPIA Co., LTD. sales@wavepia.com http://www.wavepia.com WP2806008UH(S) Unmatched GaN HEMT Product Dimension • Package Type: 360BS (Surface mount) • Unit: mm All specifications may change without notice. Version 2.0 5 WAVEPIA Co., LTD. sales@wavepia.com http://www.wavepia.com WP2806008UH(S) Unmatched GaN HEMT Product Dimension • Package Type: 360BH (Through hole) • Unit: mm All specifications may change without notice. Version 2.0 6 WAVEPIA Co., LTD. sales@wavepia.com http://www.wavepia.com WP2806008UH(S) Unmatched GaN HEMT Part Number System W P 2 8 0 6 0 0 8 U H/S ▪ S (Surface mount), H (Through Hole) ▪ M (Matched), U (Unmatched) ▪ Power Output (W) ▪ Frequency (GHz) ▪ Drain Voltage (DC) ▪ WAVEPIA Parameter Value Units Drain Voltage 28 V Lower Frequency DC GHz Upper Frequency 6 GHz Output Power 8 W Transistor Type Unmatched - Package S: Surface mount H: Through hole - All specifications may change without notice. Version 2.0 7 WAVEPIA Co., LTD. sales@wavepia.com http://www.wavepia.com