VIS30024

VIS30024 30V N-Channel Power Trench MOSFET General Description Product Summary • Trench Power MOSFET Technology • Low RDS(ON) VDS 30V 146A 2.4mΩ 2.8mΩ ID (at VGS=10V) RDS(ON) (at VGS=10V, typ) RDS(ON) (at VGS=4.5V, typ) • Optimized for High Reliable Switch Application • High Current Capability • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% RG Tested • Motor Drive • Load Switch • Battery Protection • General DC/DC Converters D TOP VIEW BOTTOM VIEW D D G S G S G S Orderable Part Number Package Type Form Minimum Order Quantity VIS30024 TO-252 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain TC=100°C Current (5) (3) ID Pulsed Drain Current TA=25°C Continuous Drain Current TA=70°C IDM Avalanche Current (3) (3) Avalanche energy L=0.1mH TC=25°C Power Dissipation (2) TC=100°C TA=25°C Power Dissipation (1) TA=70°C Junction and Storage Temperature Range IAS EAS Thermal Characteristics Parameter Maximum Junction-to-Ambient (1) t ≤ 10s Maximum Junction-to-Ambient (1,4) Steady-State Steady-State Maximum Junction-to-Case Rev 1.0 (10/2019) Maximum 30 ±20 146 93 280 38 30 65 211 96 38 6.2 4 -55 to 150 Symbol VDS VGS IDSM PD PDSM TJ, TSTG Symbol RθJA RθJC Typ 15 40 1.3 Units V V A A A mJ W W °C Max 20 50 1.6 Voltaic Semiconductor Confidential and Proprietary Information Units °C/W °C/W °C/W 1 VIS30024 30V N-Channel Power Trench MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1 5 1.4 VGS=10V, ID=20A TJ=125°C ±100 nA 2.2 V 2.4 2.9 3.3 2.8 120 0.69 gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current 3.4 mΩ mΩ S V 140 DYNAMIC PARAMETERS Ciss Input Capacitance μA 1.8 VGS=4.5V, ID=20A VDS=5V, ID=20A Units V TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ A 6335 pF 756 pF 367 pF 0.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 104 nC Qg(4.5V) Total Gate Charge 51 nC Qgs Gate Source Charge 15 nC Qgd Gate Drain Charge 18 nC tD(on) Turn-On DelayTime 8.6 ns tr Turn-On Rise Time 9.6 ns tD(off) Turn-Off DelayTime 58.4 ns tf Turn-Off Fall Time 22.8 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 29.3 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 20.5 nC VGS=0V, VDS=15V, f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75W, RGEN=3W 1) RqJA is measured with the device mounted on i in2 FR-4 board with 2oz. copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2) The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3) Single pulse width limited by junction temperature TJ(MAX)=150°C. 4) RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. 5) The maximum current rating is package limited. Rev 1.0 (10/2019) Voltaic Semiconductor Confidential and Proprietary Information 2