AP60N04D

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =60 A RDS(ON) < 18.5mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP60N04D TO-252-3L AP60N04D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 26 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 10 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 8 A IDM Pulsed Drain Current2 100 A EAS Single Pulse Avalanche Energy3 31 mJ IAS Avalanche Current 25 A PD@TC=25℃ Total Power Dissipation4 34.7 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient (Steady State)1 62 ℃/W RθJC Thermal Resistance Junction-Case1 3.6 ℃/W AP60N04D Rve3.8 臺灣永源微電子科技有限公司 1 Symbol AP60N04D 40V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=20A --- 14.5 18.5 VGS=4.5V , ID=10A --1.0 17.5 1.5 20.5 2.5 mΩ V --- -5.64 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 36 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 4.2 Ω Qg Total Gate Charge (4.5V) --- 10.7 --- Qgs Gate-Source Charge --- 3.3 --- Qgd Gate-Drain Charge --- 4.2 --- Td(on) Turn-On Delay Time --- 8.6 --- --- 3.4 --- --- 25 --- Fall Time --- 2.2 --- Ciss Input Capacitance --- 1314 --- Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 88 --- IS Continuous Source Current1,5 --- --- 42 A --- --- 100 A --- --- 1.2 V Tr Td(off) Tf Rise Time Turn-Off Delay Time ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VDS=20V , VGS=4.5V , ID=12A VDD=12V , VGS=10V , RG=3.3 ID=6A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ uA nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP60N04D Rve3.8 臺灣永源微電子科技有限公司 AP60N04D 40V N-Channel Enhancement Mode MOSFET Typical Characteristics 20 120 ID=12A ID Drain Current (A) 90 RDSON (mΩ) 16 VGS=10V VGS=7V 60 VGS=5V VGS=3V 12 VGS=4.5V 30 8 0 0 0.5 1 1.5 2 2.5 2 3 VDS , Drain-to-Source Voltage (V) 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 6 10 VGS , Gate to Source Voltage (V) IS Source Current(A) VDS=20V 4 TJ=150℃ TJ=25℃ 2 0 0.00 0.25 0.50 0.75 ID=12A 8 6 4 2 0 1.00 0 VSD , Source-to-Drain Voltage (V) 15 20 25 Fig.4 Gate-Charge Characteristics 1.8 diode Normalized On Resistance 1.4 1.4 Normalized VGS(th) 10 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse 1.8 5 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) AP60N04D Rve3.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 臺灣永源微電子科技有限公司 3 Fig.5 VGS(th) vs. TJ 150 AP60N04D 40V N-Channel Enhancement Mode MOSFET 10000 1000.00 F=1.0MHz 100us 1000 1ms 10.00 ID (A) Capacitance (pF) 10us 100.00 Ciss 10ms 100ms 1.00 Coss DC 100 Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 1 VDS Drain to Source Voltage (V) 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff AP60N04D Rve3.8 4 Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform 臺灣永源微電子科技有限公司 AP60N04D 40V N-Channel Enhancement Mode MOSFET Package Mechanical Data E Dimensions A B2 C2 Ref. L V1 D H C DETAIL A V2 D1 V1 A2 V1 Typ. Min. 2.10 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 5.30REF Max. 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 V2 0.268 0.182 0.176 7° V1 L2 Inches Max. D1 G E1 Typ. Min. A B Millimeters 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° 20 Φ3 29 A A Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 0.319 P1 7.90 8.00 8.10 0.311 0.315 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP60N04D Rve3.8 臺灣永源微電子科技有限公司 AP60N04D 40V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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