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AOD424-MS

AOD424-MS

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    TO252

  • 描述:

    类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):60A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):6.5mΩ@4.5V,60A;

  • 数据手册
  • 价格&库存
AOD424-MS 数据手册
www.msksemi.com AOD424-MS Semiconductor Compiance Description The AOD424-MS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =60 A PIN2 D ! RDS(ON) < 6.5mΩ @ VGS=4.5V " PIN1 G ! ! " Application " " ! Battery protection PIN3 S N-Channel MOSFET Load switch Uninterruptible power supply TO-252 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 60 A ID (100℃) 42 A Pulsed Drain Current IDM 210 A Maximum Power Dissipation PD 60 W 0.48 W/℃ EAS 200 mJ TJ,TSTG -55 To 150 ℃ RθJC 2.1 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Case(Note 2) www.msksemi.com AOD424-MS Semiconductor Compiance Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.75 1.0 V VGS=4.5V, ID=20 A - 5.5 7 mΩ Drain-Source On-State Resistance RDS(ON) 6.2 9 mΩ 15 - - S - 2000 - PF - 500 - PF - 200 - PF - 6.4 - nS Forward Transconductance gFS Input Capacitance Clss Output Capacitance VGS=2.5V, ID=15A VDS=10V,ID=20A VDS=10V,VGS=0V, Coss F=1.0MHz Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=10V,ID=2A,RL=1Ω - 17.2 - nS td(off) VGS=4.5V,RG=3Ω - 29.6 - nS - nS Turn-Off Delay Time Turn-Off Fall Time tf - 16.8 Total Gate Charge Qg - 27 nC Gate-Source Charge Qgs - 6.5 nC - 6.4 nC Gate-Drain Charge Qgd Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time trr Reverse Recovery Charge Qrr Forward Turn-On Time ton VDS=10V,ID=20A, VGS=10V VGS=0V,IS=10A TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) - 1.2 V - - 60 A - 25 - nS - 24 - nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω, www.msksemi.com AOD424-MS Semiconductor Compiance Typical Electrical and Thermal Characteristics (Curves) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics ID- Drain Current (A) Figure 3 Rdson- Drain Current TJ-Junction Temperature(℃) Figure 4 Rdson-JunctionTemperature Qg Gate Charge (nC) Figure 5 Gate Charge Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward www.msksemi.com AOD424-MS Semiconductor Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area Compiance TJ-Junction Temperature(℃) Figure 10 VGS(th) vs Junction Temperature Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.msksemi.com AOD424-MS Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c E V L3 h L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 0° 0.000 5.250 REF. 8° 0.300 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0° 0.000 0.207 REF. 8° 0.012 REEL SPECIFICATION P/N PKG QTY AOD424-MS TO-252 2500 www.msksemi.com AOD424-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com
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