KIA2N60HP

KIA 2.0A, 600V N-CHANNEL MOSFET 2N60H SEMICONDUCTORS 1.Description The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features n RDS(ON)=4.1Ω@VGS=10V. n Low gate charge (typical 9nC) n High ruggedness n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.1 JAN 2014 2.0A, 600V N-CHANNEL MOSFET KIA 2N60H SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous VDSS VGSS TC=25ºC TC=100ºC ID Drain current pulsed (note1) IDP EAR EAS dv/dt Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note3) TC=25ºC PD Total power dissipation Derate above 25ºC Junction temperature TJ Storage temperature TSTG *Drain current limited by maximum junction temperature. Avalanche Enlsed (TC= 25ºC, unless otherwise noted) Rating Units 252/251 220 220F 600 V ±30 V 2.0* 2.0 2.0* A 1.35* 1.35 1.35* A 8* 8 8* A 4.4 mJ 120 mJ 4.5 V/ns 44 55.5 23.6 W 0.35 0.44 0.19 W/ ºC +150 ºC -50~+150 ºC 5. Thermal characteristics Parameter Symbol Rating 220 62.5 Unit Thermal resistance,Junction-amient RthJA 252/251 62.5 Thermal resistance,case-to-sink typ. RthCS -- 0.5 -- ºC/W Thermal resistance,Junction-case RthJC 2.87 2.25 5.3 ºC/W 2 of 6 220F 62.5 ºC/W Rev 1.1 JAN 2014 KIA 2.0A, 600V N-CHANNEL MOSFET 2N60H SEMICONDUCTORS 6. Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Forward current Reverse Breakdown voltage temperature coefficient On characteristics Gate threshold voltage Static drain-source on- resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Drain-source diode characteristics drain-source diode forward voltage Continuous drain-source current Pulsed drain-source current Reverse recovery time Reverse recovery charge (TC= 25 ºC, unless otherwise noted) Test conditions Min Typ Max Unit Symbol BVDSS VGS=0V,ID=250μA VDS=600V, VGS=0V VDS=480V, TC=125ºC VGS=30V, VDS=0V VGS=-30V,VDS=0V 600 - - 1 10 100 -100 V μA μA nA nA △BVDSS/△TJ ID=250μA - 0.7 - V/ ºC VGS(TH) RDS(ON) VDS= VGS ID=250μA VGS=10V,ID=1.0A 2.0 - 4.1 4.0 5.0 V Ω CISS COSS CRSS VDS=25V,VGS=0V, f=1MHz - 200 20 4 - pF pF pF - 10 25 25 30 9 1.5 4.0 - ns ns ns ns nC nC nC - - 1.4 2.0 8.0 - V A A ns μC IDSS IGSS tD(ON) tR tD(OFF) tF QG QGS QGD VSD ISD* ISM* tRR QRR VDD=300V,ID=2.0A, RG=25Ω (note4,5) VDS=480V,ID=2.0A VGS=10V (note4,5) VGS=0V,ISD=2.0A ISD=2.0A dISD/dt=100A/μs (note4) 230 1.0 Notes:1.repetitive rating:pulse width limited by maximum junction temperature 2.L=60mH,IAS=2.0A,VDD=50V,RG=25Ω,starting TJ=25ºC 3.ISD