GT125N10T

GOFORD GT125N10 General Description  GT125N10 use advanced SFGMOSTM technology to provide low RDS(ON), low gate VDSS charge, fast switching and excellent avalanche characteristics. This device is specially designed RDS(ON) @10V (Typ.) 100V 4.1 mΩ ID 130A to get better ruggedness and suitable to use in motor control applications. Applications Features  Consumer electronic power supply  Low RDS(on) & FOM  Extremely low switching loss  Motor control  Excellent stability and uniformity  Synchronous-rectification  Fast switching and soft recovery  Isolated DC/DC convertor  RoHS Compliant  Invertors  Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT TOP VIEW TO-263  Ordering Information Part Number Marking Case GT125N10T GT125N10M GT125N10 GT125N10 TO-220 50pcs/Tube TO-263 GT125N10F GT125N10 TO-220F 800pcs/Reel 50pcs/Tube HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Packaging Page 1 (VD) GOFORD GT125N10  Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS ±20 V ID 130 A ID, pulse 390 A Continuous drain current1), TC=25 ℃ Pulsed drain current2), TC=25 ℃ Power dissipation3) for TO220, TO263 TC=25 ℃ Power dissipation3) for TO220F , TC=25 ℃ Single pulsed avalanche energy5) Operation and storage temperature  192 PD W 34 EAS 400 mJ Tstg，Tj -55 to 150 ℃ Thermal Characteristics Parameter Symbol Value TO263/TO22O TO220F Unit Thermal resistance, junction-case RθJC 0.65 3.68 ℃/W Thermal resistance, junction-ambient4) RθJA 62 62.5 ℃/W  Electrical Characteristics at Tj=25 ℃ unless otherwise specified Parameter Symbol Min. Drain-source breakdown voltage BVDSS 100 Gate threshold voltage VGS(th) 2.0 Drain-source on-state resistance RDS(ON) Gate-source leakage current IGSS Drain-source leakage current IDSS  Typ. 4.1 Max. Unit Test condition V VGS=0 V, ID=250 μA 4.0 V VDS=VGS, ID=250 μA 4.6 mΩ 100 -100 nA 1 μA Max. Unit VGS=10 V, ID=60 A VGS=20 V VGS=-20 V VDS=100 V, VGS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Test condition Input capacitance Ciss 6124.6 pF Output capacitance Coss 792.3 pF Reverse transfer capacitance Crss 15.1 pF Turn-on delay time td(on) 28.2 ns tr 7.5 ns VDS=50 V, td(off) 81.9 ns RG=2.2 Ω, tf 20.1 ns Rise time Turn-off delay time Fall time HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 VGS=0 V, VDS=50 V, ƒ=1 MHz VGS=10 V, ID=22 A Page 2 (VD) GOFORD GT125N10  Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 101.6 nC Gate-source charge Qgs 20.6 nC Gate-drain charge Qgd 28.7 nC Vplateau 4.2 V Gate plateau voltage  ID=22 A, VDS=50 V, VGS=10 V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Diode forward current IS 130 Pulsed source current ISP 390 Diode forward voltage VSD 1.3 Reverse recovery time trr 82.1 ns Reverse recovery charge Qrr 248.4 nC Peak reverse recovery current Irrm 4.9 A  Test condition Test condition A VGS