WSR20N20

WSR20N20 N-Ch MOSFET General Description Product Summery The WSR20N20 is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 200V 120mΩ 20A Applications The WSR20N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-220F Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS ±20 V 1 20 A 1 11 A 72 A 340 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy 3 PD Total Power Dissipation 104 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1.2 ℃/W www.winsok.tw Page 1 Rev 1: May.2019 WSR20N20 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS(th) Typ. Max. Unit 200 --- --- V --- 0.098 --- V/℃ 120 150 mΩ 2.0 3.0 4.0 V --- -4.57 --- mV/℃ VDS=160V , VGS=0V , TJ=25℃ --- --- 1 VDS=160V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. Reference to 25℃ , ID=1mA 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS=10V , ID=9A VGS=VDS , ID =250uA --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=9A --- 32 --- S Qg Total Gate Charge (10V) --- 41 --- Qgs Gate-Source Charge --- 5.5 --- Qgd Td(on) VDS=100V , VGS=10V , ID=18A Gate-Drain Charge --- 75 --- Turn-On Delay Time --- 24 --- uA nC Rise Time VDD=30V , VGS=10V , --- 45 --- Turn-Off Delay Time RG=6Ω, ID=18A, RL=30Ω --- 101 --- Fall Time --- 95 --- Ciss Input Capacitance --- 1318 --- Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 75 --- Min. Typ. Max. Unit --- --- 18 A --- --- 72 A --- --- 1.2 V --- 230 --- nS --- 1800 --- nC Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=18A , TJ=25℃ IF=18A , dI/dt=100A/µs , TJ=25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω www.winsok.tw Page 2 Rev 1: May.2019 WSR20N20 N-Ch MOSFET Typical Characteristics www.winsok.tw Page 3 Rev 1: May.2019 WSR20N20 N-Ch MOSFET Typical Characteristics www.winsok.tw Page 4 Rev 1: May.2019 WSR20N20 N-Ch MOSFET TO-220 Package Information TO-220 S Y M B O L A MIN. MAX. MIN. MAX. 4.20 4.80 0.165 0.189 A1 2.34 3.20 0.092 0.126 A2 2.10 2.90 0.083 0.114 b 0.50 0.90 0.020 0.035 0.075 MILLIMETERS RECOMMENDED LAND PATTERN INCHES b2 0.91 1.90 0.035 c 0.30 0.80 0.012 0.031 D 8.10 9.40 0.319 0.370 d1 14.50 16.50 0.571 0.650 d2 12.10 12.90 0.476 0.508 E 9.70 10.70 0.382 0.421 14.50 0.512 0.570 e 2.54 BSC R0. 45 UNIT: mm 0.100 BSC L 13.00 L1 1.60 4.00 0.063 0.157 P 3.00 3.60 0.118 0.142 www.winsok.tw 2.54 Page 6 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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