FS2301

FS2301 P-Channel SMD MOSFET Product Summary V(BR)DSS -20V RDS(on)MAX 120mΩ@-4.5V 180mΩ@-2.5V ID -2.4A Feature Application  Advanced trench process technology  Load Switch for Portable Devices  High density cell design for ultra low on-resistance  DC/DC Converter Package Circuit diagram D G S SOT-23 Marking A1SHB www.fuxinsemi.com Page 1 Ver2.1 FS2301 P-Channel SMD MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.4 A Pulsed Drain Current IDM -10 A Power Dissipation PD 1.2 W Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA -1.5 V Gate threshold voltage VGS(th) Drain-source on-resistance1) RDS(on) VDS =VGS, ID =-250µA -19 V -0.4 VGS =-4.5V, ID =-2.4A 120 140 VGS =-2.5V, ID =-2.0A 180 200 mΩ Dynamic characteristics2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) 500 VDS =-10V,VGS =0V,f =1MHz 120 pF 105 8.6 VDS =-10V,VGS =-4.5V, ID =-2.8A 1.5 nC 2.6 10 VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5Ω tf 18 nS 55 52 Source-Drain Diode characteristics Diode Forward Current1) Diode Forward voltage IS VDS VGS =0V, IS=-2.4A -2.4 A -1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. www.fuxinsemi.com Page 2 Ver2.1 FS2301 P-Channel SMD MOSFET Typical Characteristics Output Characteristics Transfer Characteristics -20 -18 Ta=25℃ Pulsed -16 ID (A) -14 (A) VGS=-3V -12 DRAIN CURRENT ID DRAIN CURRENT VDS=-3V -16 VGS=-4V,-5V,-6V Pulsed VGS=-2V -8 Ta=25℃ -12 -10 Ta=100℃ -8 -6 -4 -4 VGS=-1.5V -2 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -0 -0.0 -5 (V) -0.5 -1.0 -1.5 -2.0 -2.5 GATE TO SOURCE VOLTAGE -3.0 VGS -3.5 RDS(ON) —— VGS RDS(ON) —— ID 300 150 Ta=25℃ Pulsed (m) ID=-2.6A 120 ON-RESISTANCE RDS(ON) VGS=-2.5V RDS(ON) (m) Pulsed ON-RESISTANCE -4.0 (V) 90 VGS=-4.5V 60 30 -0.5 200 Ta=100℃ 100 Ta=25℃ 0 -1.0 -1.5 -2.0 DRAIN CURRENT -2.5 ID -3.0 -0 (A) -1 -2 -3 GATE TO SOURCE VOLTAGE -4 VGS -5 (V) Threshold Voltage IS —— VSD -3 -1.0 -0.1 -0.0 -0.8 VTH Ta=100℃ -0.4 Ta=25℃ -0.8 -1.2 SOURCE TO DRAIN VOLTAGE www.fuxinsemi.com THRESHOLD VOLTAGE -1 SOURCE CURRENT IS (A) (V) Pulsed -1.6 ID=-250uA -0.6 -0.4 -0.2 25 VSD (V) 50 75 JUNCTION TEMPERATURE Page 3 100 Tj 125 (℃ ) Ver2.1 FS2301 P-Channel SMD MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP. 1.800 L L1 www.fuxinsemi.com 0.037 TYP. 0.550 REF. 0.300 0.079 0.022 REF. 0.500 Page 4 0.012 0.020 Ver2.1